JAJS595I August   1999  – June 2016 LMV821-N , LMV822-N , LMV822-N-Q1 , LMV824-N , LMV824-N-Q1

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information, 5 Pins
    5. 6.5  Thermal Information, 8 Pins
    6. 6.6  Thermal Information, 14 Pins
    7. 6.7  DC Electrical Characteristics 2.7V
    8. 6.8  DC Electrical Characteristics 2.5V
    9. 6.9  AC Electrical Characteristics 2.7V
    10. 6.10 DC Electrical Characteristics 5V
    11. 6.11 AC Electrical Characteristics 5V
    12. 6.12 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Frequency and Phase Response Considerations
      2. 7.4.2 Unity Gain Pulse Response Consideration
      3. 7.4.3 Input Bias Current Consideration
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Telephone-Line Transceiver
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
      2. 8.2.2 “Simple” Mixer (Amplitude Modulator)
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Performance Plot
      3. 8.2.3 Tri-Level Voltage Detector
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Performance Plot
      4. 8.2.4 Dual Amplifier Active Filters (DAAFs)
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Detailed Design Procedure
        3. 8.2.4.3 Application Perfromance Plots
    3. 8.3 Do's and Don'ts
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 ドキュメントのサポート
      1. 11.1.1 関連資料
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 コミュニティ・リソース
    4. 11.4 関連リンク
    5. 11.5 商標
    6. 11.6 静電気放電に関する注意事項
    7. 11.7 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings(1)(2)

MIN MAX UNIT
Differential Input Voltage V– V+ V
Supply Voltage (V+– V −) –0.3 5.5 V
Output Short Circuit to V+(3) See (3)
Output Short Circuit to V−(3) See (3)
Soldering Information
Infrared or Convection (20 sec) 235 °C
Junction Temperature(1) 150 °C
Storage Temperature Tstg –65 150 °C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test conditions, see the Electrical Characteristics.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(3) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) (2)(3) ±2000 V
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) LMV821 ±1500
Machine Model (MM) (4) ±200
(1) Level listed above is the passing level per ANSI, ESDA, and JEDEC JS-001. JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) Human body model, 1.5 kΩ in series wth 100 pF.
(3) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification for Q grade devices.
(4) Machine model, 200Ω in series with 100 pF.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
Supply Voltage 2.5 5.5 V
Temperature Range LMV821, LMV822, LMV824 –40 85 °C
LMV822-Q1, LMV824I and LMV824-Q1 –40 125

6.4 Thermal Information, 5 Pins(1)

THERMAL METRIC(1) DCK
SC70-5 PACKAGE		 DBV
SOT23-5 PACKAGE		 UNIT
5 PIN 5 PIN
RθJA Junction-to-ambient thermal resistance 263.4 217.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 102.8 142.4 °C/W
RθJB Junction-to-board thermal resistance 50.9 49.4 °C/W
ψJT Junction-to-top characterization parameter 3.7 29.1 °C/W
ψJB Junction-to-board characterization parameter 50.2 48.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W

6.5 Thermal Information, 8 Pins(1)

THERMAL METRIC(1) D
SOIC PACKAGE		 DGK
VSSOP PACKAGE 		UNIT
8 PIN 8 PIN
RθJA Junction-to-ambient thermal resistance 132.6 193.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 76.9 84.4 °C/W
RθJB Junction-to-board thermal resistance 73.2 114.5 °C/W
ψJT Junction-to-top characterization parameter 25.0 21.6 °C/W
ψJB Junction-to-board characterization parameter 72.6 113.0 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A °C/W

6.6 Thermal Information, 14 Pins(1)

THERMAL METRIC(1) D
SOIC PACKAGE		 PW
TSSOP PACKAGE		 DGV
TVSOP PACKAGE		 UNIT
14 PIN 14 PIN 14 PIN
RθJA Junction-to-ambient thermal resistance 109.7 135.6 148.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 65.9 63.8 67.3 °C/W
RθJB Junction-to-board thermal resistance 64.1 77.4 77.5 °C/W
ψJT Junction-to-top characterization parameter 24.5 13.0 12.9 °C/W
ψJB Junction-to-board characterization parameter 63.9 76.8 76.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.7 DC Electrical Characteristics 2.7V

Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 2.7V, V − = 0V, VCM = 1.0V, VO = 1.35V and RL > 1 MΩ. Temperature extremes are −40°C ≤ TJ ≤ 85°C for LMV821/822/824, and −40°C ≤ TJ ≤ 125°C for LMV822-Q1/LMV824-Q1/LMV824I.
PARAMETER TEST CONDITIONS MIN (3) TYP (2) MAX (3) UNIT
VOS Input Offset Voltage LMV821/822/822-Q1/824 1 3.5 mV
LMV821/822/822-Q1/824, Over Temperature 4
LMV824-Q1/LMV824I 1
LMV824-Q1/LMV824I, Over Tempeature 5.5
TCVOS Input Offset Voltage Average Drift 1 μV/°C
IB Input Bias Current 30 90 nA
Over Temperature 140
IOS Input Offset Current 0.5 30 nA
Over Temperature 50
CMRR Common Mode Rejection Ratio 0V ≤ VCM ≤ 1.7V 70 85 dB
0V ≤ VCM ≤ 1.7V, Over Temperature 68
+PSRR Positive Power Supply Rejection Ratio 1.7V ≤ V+ ≤ 4V, V- = 1V, VO = 0V, VCM = 0V
LMV821/822/824/824-Q1/LMV824I		 75 85 dB
1.7V ≤ V+ ≤ 4V, V- = 1V, VO = 0V, VCM = 0V
LMV821/822/824/824-Q1/LMV824I, Over Temperature		 70
LMV822-Q1 75 85
−PSRR Negative Power Supply Rejection Ratio -1.0V ≤ V- ≤ -3.3V, V+ = 1.7V, VO = 0V, VCM = 0V
LMV821/822/824/824-Q1/LMV824I		 73 85 dB
-1.0V ≤ V- ≤ -3.3V, V+ = 1.7V, VO = 0V, VCM = 0V
LMV821/822/824/824-Q1/LMV824I, Over Temperature		 70
LMV822-Q1 73 85
VCM Input Common-Mode Voltage Range For CMRR ≥ 50dB –0.3 –0.2 V
1.9 2.0
AV Large Signal Voltage Gain Sourcing, RL = 600Ω to 1.35V,
VO = 1.35V to 2.2V;
LMV821/822/824		 90 100 dB
Sourcing, RL = 600Ω to 1.35V,
VO = 1.35V to 2.2V;
LMV821/822/824, Over Temperature		 85
LMV822-Q1/LMV824-Q1/LMV824I 90 100
Sinking, RL = 600Ω to 1.35V,
VO = 1.35V to 0.5V
LMV821/822/824		 85 90 dB
Sinking, RL = 600Ω to 1.35V,
VO = 1.35V to 0.5V
LMV821/822/824, Over Temperature		 80
LMV824I 85 90
LMV824I, Over Temperature 78
LMV822-Q1/LMV824-Q1 85 90
Sourcing, RL =2kΩ to 1.35V,
VO = 1.35V to 2.2V;
LMV821/822/824		 95 100 dB
Sourcing, RL =2kΩ to 1.35V,
VO = 1.35V to 2.2V;
LMV821/822/824, Over Temperature		 90
LMV822-Q1/LMV824-Q1/LMV824I 95 100
Sinking, RL = 2kΩ to 1.35V,
VO = 1.35V to 0.5V
LMV821/822/824		 90 95 dB
Sinking, RL = 2kΩ to 1.35V,
VO = 1.35V to 0.5V
LMV821/822/824, Over Temperature		 85
LMV822-Q1/LMV824-Q1/LMV824I 90 95
V O Output Swing V+ = 2.7V, RL= 600Ω to 1.35V 2.50 2.58 V
0.13 0.20
V+ = 2.7V, RL= 600Ω to 1.35V, Over Temp 2.40 0.30
V+ = 2.7V, RL= 2kΩ to 1.35V 2.60 2.66 V
0.08 0.120
V+ = 2.7V, RL= 2kΩ to 1.35V, Over Temp 2.50 0.200
IO Output Current Sourcing, VO = 0V 12 16 mA
Sinking, VO = 2.7V 12 26
IS Supply Current LMV821 (Single) 0.22 0.3 mA
LMV821, Over Temperature 0.5
LMV822 (Dual) 0.45 0.6 mA
LMV822, Over Temperature 0.8
LMV824 (Quad) 0.72 1.0 mA
LMV824, Over Temperature 1.2

6.8 DC Electrical Characteristics 2.5V

Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 2.5V, V − = 0V, VCM = 1.0V, VO = 1.25V and RL > 1 MΩ. Temperature extremes are −40°C ≤ TJ ≤ 85°C for LMV821/822/824, and −40°C ≤ TJ ≤ 125°C for LMV822-Q1/LMV824-Q1/LMV824I.
PARAMETER CONDITION MIN (3) TYP (2) MAX (3) UNIT
VOS Input Offset Voltage LMV821/822/822-Q1/824 1 3.5 mV
LMV821/822/822-Q1/824, Over Temperature 4
LMV824-Q1/LMV824I 1
LMV824-Q1/LMV824I, Over Temperature 5.5
V O Output Swing V+ = 2.5V, RL = 600Ω to 1.25V 2.30 2.37 V
0.13 0.20
V+ = 2.5V, RL = 600Ω to 1.25V, Over Temperature 2.20 0.30
V+ = 2.5V, RL = 2kΩ to 1.25V 2.40 2.46 V
0.08 0.12
V+ = 2.5V, RL = 2kΩ to 1.25V, Over Temperature 2.30 0.20

6.9 AC Electrical Characteristics 2.7V

Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 2.7V, V − = 0V, VCM = 1.0V, VO = 1.35V and RL > 1 MΩ. Temperature extremes are −40°C ≤ TJ ≤ 85°C for LMV821/822/824, and −40°C ≤ TJ ≤ 125°C for LMV822-Q1/LMV824-Q1/LMV824I.
PARAMETER TEST CONDITIONS MIN (3) TYP (2) MAX (3) UNIT
SR Slew Rate See (4) 1.5 V/μs
GBW Gain-Bandwdth Product 5 MHz
Φm Phase Margin 61 Deg.
Gm Gain Margin 10 dB
Amp-to-Amp Isolation See (5) 135 dB
en Input-Related Voltage Noise f = 1 kHz, VCM = 1V 28 nV/√Hz
in Input-Referred Current Noise f = 1 kHz 0.1 pA/√Hz
THD Total Harmonic Distortion f = 1 kHz, AV = −2,
RL = 10 kΩ, VO = 4.1 V PP		 0.01%

6.10 DC Electrical Characteristics 5V

Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 5 V, V − = 0V, VCM = 2.0V, VO = 2.5V and RL > 1 MΩ. Temperature extremes are −40°C ≤ TJ ≤ 85°C for LMV821/822/824, and −40°C ≤ TJ ≤ 125°C for LMV822-Q1/LMV824-Q1/LMV824I.
PARAMETER TEST CONDITIONS MIN (3) TYP (2) MAX (3) UNIT
VOS Input Offset Voltage LMV821/822/822-Q1/824 1 3.5 mV
LMV821/822/822-Q1/824, Over Temperature 4.0
LMV824-Q1/LMV824I 1
LMV824-Q1/ LMV824I, Over Temperature 5.5
TCVOS Input Offset Voltage Average Drift 1 μV/°C
IB Input Bias Current 40 100 nA
Over Temperature 150
IOS Input Offset Current 0.5 30 nA
Over Temperature 50
CMRR Common Mode Rejection Ratio 0V ≤ VCM ≤ 4.0V 72 90 dB
0V ≤ VCM ≤ 4.0V, Over Temperature 70
+PSRR Positive Power Supply Rejection Ratio 1.7V ≤ V+ ≤ 4V, V- = 1V, VO = 0V, VCM = 0V
LMV821/822/824/824-Q1/824I		 85 75 dB
1.7V ≤ V+ ≤ 4V, V- = 1V, VO = 0V, VCM = 0V
LMV821/822/824/824-Q1/824I, Over Temperature		 70
LMV822-Q1 75 85
−PSRR Negative Power Supply Rejection Ratio -1.0V ≤ V- ≤ -3.3V, V+ = 1.7V, VO = 0V, VCM = 0V
LMV821/822/824/824-Q1/824I		 73 85 dB
-1.0V ≤ V- ≤ -3.3V, V+ = 1.7V, VO = 0V, VCM = 0V
LMV821/822/824/824-Q1/824I		 70
LMV822-Q1 73 85
VCM Input Common-Mode Voltage Range For CMRR ≥ 50dB -0.3 -0.2 V
4.2 4.3 V
AV Large Signal Voltage Gain Sourcing, RL = 600Ω to 2.5V,
VO = 2.5V to 4.5V;
LMV821/822/824		 95 105 dB
Sourcing, RL = 600Ω to 2.5V,
VO = 2.5V to 4.5V;
LMV821/822/824, Over Temperature		 90
LMV822-Q1/LMV824-Q1/LMV824I 95 105
Sinking, RL = 600Ω to 2.5V,
VO = 2.5V to 0.5V
LMV821/822/824		 95 105 dB
Sinking, RL = 600Ω to 2.5V,
VO = 2.5V to 0.5V
LMV821/822/824, Over Temperature		 90
LMV824I 95 105
LMV824I, Over Temperature 82
LMV822-Q1/LMV824-Q1 95 105
Sourcing, RL =2kΩ to 2.5V,
VO = 2.5V to 4.5V;
LMV821/822/824		 95 105 dB
Sourcing, RL =2kΩ to 2.5V,
VO = 2.5V to 4.5V;
LMV821/822/824, Over Temperature		 90
LMV822-Q1/LMV824-Q1/LMV824I 95 105
Sinking, RL = 2kΩ to 2.5V,
VO = 2.5V to 0.5V
LMV821/822/824		 95 105 dB
Sinking, RL = 2kΩ to 2.5V,
VO = 2.5V to 0.5V
LMV821/822/824, Over Temperature		 90
LMV822-Q1/LMV824-Q1/LMV824I 95 105
V O Output Swing V+ = 5V,RL = 600Ω to 2.5V 4.75 4.84 V
V+ = 5V,RL = 600Ω to 2.5V, Over Temperature 4.70
V+ = 5V,RL = 600Ω to 2.5V (LMV824-Q1, LMV824I) 4.84
V+ = 5V,RL = 600Ω to 2.5V (LMV824-Q1, LMV824I), Over Temperature 4.60
V+ = 5V,RL = 600Ω to 2.5V 0.17 0.250 V
V+ = 5V,RL = 600Ω to 2.5V, Over Temperature 0.30
V+ = 5V,RL = 600Ω to 2.5V (LMV824-Q1, LMV824I) 0.17
V+ = 5V,RL = 600Ω to 2.5V (LMV824-Q1, LMV824I), Over Temperature 0.40
V+ = 5V, RL = 2kΩ to 2.5V 4.85 4.90 V
0.10 0.15
V+ = 5V, RL = 2kΩ to 2.5V, Over Temperature 4.80 0.20
IO Output Current Sourcing, VO = 0V 20 45 mA
Sourcing, VO = 0V, Over Temperature 15
Sourcing, VO = 0V
LMV824I		 20 45 mA
Sourcing, VO = 0V
LMV824I, Over Temperature		 10
Sinking, VO = 5V 20 40 mA
Sinking, VO = 5V, Over Temperature 15
Sinking, VO = 5V
LMV824I		 20 40 mA
Sinking, VO = 5V
LMV824I, Over Temperature		 10
IS Supply Current LMV821 (Single) 0.30 0.4 mA
LMV821, Over Temperature 0.6
LMV822 (Dual) 0.5 0.7 mA
LMV822, Over Temperature 0.9
LMV824 (Quad) 1.0 1.3 mA
LMV824, Over Temperature 1.5
LMV824I (Quad) 1.0 1.3 mA
LMV824I, Over Temperature 1.6

6.11 AC Electrical Characteristics 5V

Unless otherwise specified, all limits ensured for TJ = 25°C. V+ = 5 V, V − = 0V, VCM = 2.0V, VO = 2.5V and RL > 1 MΩ. Temperature extremes are −40°C ≤ TJ ≤ 85°C for LMV821/822/824, and −40°C ≤ TJ ≤ 125°C for LMV822-Q1/LMV824-Q1/LMV824I.
PARAMETER TEST CONDITIONS MIN (3) TYP (2) MAX (3) UNIT
SR Slew Rate See (4) 1.4 2.0 V/μs min
GBW Gain-Bandwdth Product 5.6 MHz
Φm Phase Margin 67 Deg.
Gm Gain Margin 15 dB
Amp-to-Amp Isolation See (5) 135 dB
en Input-Related Voltage Noise f = 1 kHz, VCM = 1V 24 nV/√Hz
in Input-Referred Current Noise f = 1 kHz 0.25 pA/√Hz
THD Total Harmonic Distortion f = 1 kHz, AV = −2,
RL = 10 kΩ, VO = 4.1 V PP		 0.01%
(1) The maximum power dissipation is a function of TJ(max) , θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(max)–TA)/θJA. All numbers apply for packages soldered directly into a PC board.
(2) Typical Values represent the most likely parametric norm.
(3) All limits are ensured by testing or statistical analysis.
(4) V+ = 5V. Connected as voltage follower with 3V step input. Number specified is the slower of the positive and negative slew rates.
(5) Input referred, V+ = 5V and RL = 100kΩ connected to 2.5V. Each amp excited in turn with 1 kHz to produce VO = 3 VPP.

6.12 Typical Characteristics

Unless otherwise specified, VS = +5V, single supply, TA = 25°C.
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012801.png
Figure 1. Supply Current vs. Supply Voltage (LMV821)
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012803.png
Figure 3. Sourcing Current vs. Output Voltage (VS = 2.7V)
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012805.png
Figure 5. Sinking Current vs. Output Voltage (VS = 2.7V)
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012807.png
Figure 7. Output Voltage Swing vs. Supply Voltage
(RL = 10kΩ)
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012808.png
Figure 9. Output Voltage Swing vs. Supply Voltage (RL = 600Ω)
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012818.png
Figure 11. Input Voltage Noise vs. Frequency
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012893.png
Figure 13. Crosstalk Rejection vs. Frequency
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012810.png
Figure 15. -PSRR vs. Frequency
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012888.png
Figure 17. Input Voltage vs. Output Voltage
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012812.png
Figure 19. Gain and Phase Margin vs. Frequency
(RL = 100kΩ, 2kΩ, 600Ω) at 5V
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012814.png
Figure 21. Gain and Phase Margin vs. Frequency
(Temp.= 25, -40, 85 °C, RL = 10kΩ) at 5V
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012816.png
Figure 23. Gain and Phase Margin vs. Frequency
(CL = 100pF, 200pF, 0pF RL = 10kΩ) at 5V
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012820.png
Figure 25. Gain and Phase Margin vs. Frequency
(CL = 100pF, 200pF, 0pF RL = 600Ω) at 5V
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012821.png
Figure 27. Non-Inverting Large Signal Pulse Response
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012827.png
Figure 29. Inverting Large Signal Pulse Response
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012882.png
Figure 31. THD vs. Frequency
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012802.png
Figure 2. Input Current vs. Temperature
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012804.png
Figure 4. Sourcing Current vs Output Voltage (VS = 5V)
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012806.png
Figure 6. Sinking Current vs. Output Voltage
(VS = 5V)
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012886.png
Figure 8. Output Voltage Swing vs. Supply Voltage
(RL = 2kΩ)
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012887.png
Figure 10. Output Voltage Swing vs. Load Resistance
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012817.png
Figure 12. Input Current Noise vs. Frequency
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012809.png
Figure 14. +PSRR vs. Frequency
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012847.png
Figure 16. CMRR vs. Frequency
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012811.png
Figure 18. Gain and Phase Margin vs. Frequency
(RL = 100kΩ, 2kΩ, 600Ω) at 2.7V
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012813.png
Figure 20. Gain and Phase Margin vs. Frequency
(Temp.= 25, -40, 85°C, RL = 10kΩ) at 2.7V
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012815.png
Figure 22. Gain and Phase Margin vs. Frequency
(CL = 100pF, 200pF, 0pF, RL = 10kΩ) at 2.7V
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012819.png
Figure 24. Gain and Phase Margin vs. Frequency
(CL = 100pF, 200pF, 0pF RL = 600Ω) at 2.7V
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012862.png
Figure 26. Slew Rate vs. Supply Voltage
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012824.png
Figure 28. Non-Inverting Small Signal Pulse Response
LMV821-N LMV822-N LMV822-N-Q1 LMV824-N LMV824-N-Q1 10012830.png
Figure 30. Inverting Small Signal Pulse Response