SNVS225H February 2003 – June 2015 LP3871 , LP3874
PRODUCTION DATA.
NOTE
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers must validate and test their design implementation to confirm system functionality.
The LP3871 and LP3874 devices are linear regulators designed to provide high load current of up to 0.8 A, low dropout voltage, and low quiescent current in shutdown mode.
The internal MOSFET in LP3871 and LP3874 has an inherent parasitic diode. During normal operation, the input voltage is higher than the output voltage and the parasitic diode is reverse biased. However, if the output is pulled above the input in an application, then current flows from the output to the input as the parasitic diode gets forward biased. The output can be pulled above the input as long as the current in the parasitic diode is limited to 200-mA continuous and 1-A peak.
As VIN increases during start-up, the regulator output will track the input until VIN reaches the minimum operating voltage (typically about 2.5 V). For output voltages programmed to 2 V or below, the regulator output may momentarily exceed its programmed output voltage during start-up. Outputs programmed to voltages above 2 V are not affected by this behavior.
For LP3871 and LP3874 typical applications, use the parameters listed in Table 1.
DESIGN PARAMETER | EXAMPLE VALUE |
---|---|
Input voltage | 2.5 V to 7 V |
Output voltage | 2.5 V |
Output current | 0.8 A |
Output capacitor | 10 µF |
Input capacitor | 10 µF |
Output capacitor ESR range | 100 mΩ to 4 Ω |
Like any low-dropout regulator, external capacitors are required to assure stability. These capacitors must be correctly selected for proper performance.
The minimum value of output capacitance that can be used for stable full-load operation is 10 µF, but it may be increased without limit. The output capacitor must have an equivalent series resistance (ESR) value as shown in the stable region of the curve (Figure 13). Tantalum capacitors are recommended for the output capacitor.
It is important to note that capacitance tolerance and variation with temperature must be taken into consideration when selecting a capacitor so that the minimum required amount of capacitance is provided over the full operating temperature range. In general, a good Tantalum capacitor will show very little capacitance variation with temperature, but a ceramic may not be as good (depending on dielectric type). Aluminum electrolytics also typically have large temperature variation of capacitance value.
Equally important to consider is a capacitor's ESR change with temperature: this is not an issue with ceramics, as their ESR is extremely low. However, it is very important in Tantalum and aluminum electrolytic capacitors. Both show increasing ESR at colder temperatures, but the increase in aluminum electrolytic capacitors is so severe they may not be feasible for some applications (see Capacitor Characteristics).
For values of capacitance in the 10-µF to 100-µF range, ceramics are usually larger and more costly than tantalum capacitors but give superior AC performance for bypassing high frequency noise because of very low ESR (typically less than 10 mΩ). However, some dielectric types do not have good capacitance characteristics as a function of voltage and temperature.
Z5U and Y5V dielectric ceramics have capacitance that drops severely with applied voltage. A typical Z5U or Y5V capacitor can lose 60% of its rated capacitance with half of the rated voltage applied to it. The Z5U and Y5V also exhibit a severe temperature effect, losing more than 50% of nominal capacitance at high and low limits of the temperature range.
X7R and X5R dielectric ceramic capacitors are strongly recommended if ceramics are used, as they typically maintain a capacitance range within ±20% of nominal over full operating ratings of temperature and voltage. Of course, they are typically larger and more costly than Z5U/Y5U types for a given voltage and capacitance.
Solid tantalum capacitors are recommended for use on the output because their typical ESR is very close to the ideal value required for loop compensation. They also work well as input capacitors if selected to meet the ESR requirements previously listed.
Tantalums also have good temperature stability: a good quality tantalum will typically show a capacitance value that varies less than 10-15% across the full temperature range of 125°C to −40°C. ESR will vary only about 2X going from the high to low temperature limits.
The increasing ESR at lower temperatures can cause oscillations when marginal quality capacitors are used (if the ESR of the capacitor is near the upper limit of the stability range at room temperature).
This capacitor type offers the most capacitance for the money. The disadvantages are that they are larger in physical size, not widely available in surface mount, and have poor AC performance (especially at higher frequencies) due to higher ESR and ESL.
Compared by size, the ESR of an aluminum electrolytic is higher than either tantalum or ceramic, and it also varies greatly with temperature. A typical aluminum electrolytic can exhibit an ESR increase of as much as 50× when going from 25°C down to −40°C.
It must also be noted that many aluminum electrolytics only specify impedance at a frequency of 120 Hz, which indicates they have poor high frequency performance. Only aluminum electrolytics that have an impedance specified at a higher frequency (between 20 kHz and 100 kHz) must be used for the LP387X. Derating must be applied to the manufacturer's ESR specification, since it is typically only valid at room temperature.
Any applications using aluminum electrolytics must be thoroughly tested at the lowest ambient operating temperature where ESR is maximum.
Radio frequency interference (RFI) and electromagnetic interference (EMI) can degrade the performance of any integrated circuit because of the small dimensions of the geometries inside the device. In applications where circuit sources are present which generate signals with significant high frequency energy content (> 1 MHz), care must be taken to ensure that this does not affect the device regulator.
If RFI/EMI noise is present on the input side of the regulator (such as applications where the input source comes from the output of a switching regulator), good ceramic bypass capacitors must be used at the input pin of the device.
If a load is connected to the device output which switches at high speed (such as a clock), the high-frequency current pulses required by the load must be supplied by the capacitors on the device output. Since the bandwidth of the regulator loop is less than 100 kHz, the control circuitry cannot respond to load changes above that frequency. This means the effective output impedance of the device at frequencies above 100 kHz is determined only by the output capacitor(s).
In applications where the load is switching at high speed, the output of the device may need RF isolation from the load. It is recommended that some inductance be placed between the output capacitor and the load, and good RF bypass capacitors be placed directly across the load.
PCB layout is also critical in high noise environments, since RFI/EMI is easily radiated directly into PC traces. Noisy circuitry must be isolated from "clean" circuits where possible, and grounded through a separate path. At MHz frequencies, ground planes begin to look inductive and RFI/EMI can cause ground bounce across the ground plane.
In multi-layer PCB applications, care must be taken in layout so that noisy power and ground planes do not radiate directly into adjacent layers which carry analog power and ground.
Noise is specified in two ways:
Attention must be paid to the units of measurement. Spot noise is measured in units µV/√Hz or nV/√Hz and total output noise is measured in µVRMS.
The primary source of noise in low-dropout regulators is the internal reference. In CMOS regulators, noise has a low frequency component and a high frequency component, which depend strongly on the silicon area and quiescent current. Noise can be reduced in two ways: by increasing the transistor area or by increasing the current drawn by the internal reference. Increasing the area will decrease the chance of fitting the die into a smaller package. Increasing the current drawn by the internal reference increases the total supply current (ground pin current). Using an optimized trade-off of ground pin current and die size, the LP3871 and LP3874 achieve low noise performance and low quiescent-current operation.
The total output noise specification for LP3871 and LP3874 devices is presented in Electrical Characteristics. The output noise density at different frequencies is represented by a curve under Typical Characteristics.
CIN = COUT = 10 µF, Oscon |
CIN = COUT = 10 µF, Poscap |
CIN = COUT = 100 µF, Tantalum |
CIN = COUT = 100 µF, Oscon |
CIN = COUT = 10 µF, Tantalum |