SNVS251J May 2004 – September 2014 LP3990
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage | –0.3 | 6.5 | V | |
Output voltage | –0.3 | Note(4) | ||
ENABLE input voltage | –0.3 | 6.5 | ||
Continuous power dissipation internally limited | Note(5) |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Tstg | Storage temperature range | –65 | 150 | °C | |
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | –2000 | 2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins | 250 | 1500 | |||
Machine model | –200 | 200 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
Input voltage, VIN | 2 | 6 | V | ||
Enable input voltage, VEN | 0.0 | VIN | |||
Junction temperature, TJ(1) | –40 | 125 | °C |
THERMAL METRIC(1) | LP3990 | UNIT | |||
---|---|---|---|---|---|
YZR (DSBGA) | DBV (SOT-23) | NGG (WSON) | |||
4 PINS | 5 PINS | 6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 188.9 | 165.2 | 53.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 1.0 | 69.9 | 51.2 | |
RθJB | Junction-to-board thermal resistance | 105.3 | 27.3 | 28.2 | |
ψJT | Junction-to-top characterization parameter | 0.7 | 1.8 | 0.6 | |
ψJB | Junction-to-board characterization parameter | 105.2 | 26.8 | 28.3 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | 8.1 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VIN | Input voltage | Note (2), TJ = 25°C | 2 | 6 | V | ||
ΔVOUT | Output voltage tolerance | ILOAD = 1 mA TJ = 25°C |
DSBGA | –1 | 1% | ||
WQFN | –1.5% | 1.5% | |||||
SOT-23 | –1.5% | 1.5% | |||||
Over full line and load regulation | DSBGA | –2.5% | 2.5% | ||||
WQFN | –3% | 3% | |||||
SOT-23 | –4% | 4% | |||||
Line regulation error | VIN = (VOUT(NOM) + 1 V) to 6 V | 0.1 | 0.02 | 0.1 | %/V | ||
Load regulation error | IOUT = 1 mA to 150 mA |
VOUT = 0.8 V to 1.95 V DSBGA |
–0.005 | 0.002 | 0.005 | %/mA | |
VOUT = 0.8 V to 1.95 V WQFN, SOT-23 |
–0.008 | 0.003 | 0.008 | ||||
VOUT = 2 V to 3.3 V DSBGA |
–0.002 | 0.0005 | 0.002 | ||||
VOUT = 2 V to 3.3 V WQFN, SOT-23 |
–0.005 | 0.002 | 0.005 | ||||
VDO | Dropout voltage | IOUT = 150 mA(4)(5) | 120 | 200 | mV | ||
ILOAD | Load current | Note (5)(6), TJ = 25°C | 0 | µA | |||
IQ | Quiescent current | VEN = 950 mV, IOUT = 0 mA | 43 | 80 | µA | ||
VEN = 950 mV, IOUT = 150 mA | 65 | 120 | |||||
VEN = 0.4 V (output disabled), TJ = 25°C | 0.002 | 0.2 | |||||
ISC | Short circuit current limit | Note (7) | 550 | 1000 | mA | ||
IOUT | Maximum output current | 150 | |||||
PSRR | Power Supply Rejection Ratio | ƒ = 1 kHz, IOUT = 1 mA to 150 mA | 55 | dB | |||
ƒ = 10 kHz, IOUT = 150 mA | 35 | ||||||
eη | Output noise voltage(5) | BW = 10 Hz to 100 kHz | VOUT = 0.8 V | 60 | µVRMS | ||
VOUT = 1.5 V | 125 | ||||||
VOUT = 3.3 V | 180 | ||||||
TSHUTDOWN | Thermal shutdown junction temperature | Junction temperature (TJ) rising until the output is disabled | 155 | °C | |||
Hysteresis | 15 | ||||||
ENABLE CONTROL CHARACTERISTICS | |||||||
IEN(8) | Maximum input current at EN pin | VEN = 0 V (Output is disabled) TJ = 25°C |
0.001 | 0.1 | µA | ||
VEN = 6 V | 2.5 | 6 | 10 | ||||
VIL | Low input threshold | VIN = 2 V to 6 V VEN falling from ≥ VIH until the output is disabled |
0.4 | V | |||
VIH | High input threshold | VIN = 2 V to 6 V VEN rising from ≤ VIL until the output is enabled |
0.95 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
COUT | Output capacitance | Capacitance(3) | 0.7(2) | 1 | 500 | µF |
ESR | 5 | mΩ |
MIN | NOM(1) | MAX(2) | UNIT | ||||
---|---|---|---|---|---|---|---|
TON | Turnon time (3) | From VEN ↑ VIH to VOUT 95% level (VIN(MIN) to 6 V) |
VOUT = 0.8 V | 80 | 150 | µs | |
VOUT = 1.5 V | 105 | 200 | |||||
VOUT = 3.3 V | 175 | 250 | |||||
Transient response | Line transient response (ΔVOUT) | Trise = Tfall = 30 µs(3), ΔVIN = 600 mV |
8 | 16 | mV (pk-pk) | ||
Load transient response (ΔVOUT) | Trise = Tfall = 1 µs(3), IOUT = 1 mA to 150 mA COUT = 1 µF |
55 | 100 | mV |
ILOAD = 0 mA | ||
ILOAD = 150 mA | ||
ILOAD = 1 mA | ||