JAJSD10B March 2017 – July 2018 LP8863-Q1
PRODUCTION DATA.
Gate-drive voltage for the FET is VDD or about 2 × VDD, if the charge pump is enabled. Use an N-type MOSFET for the switching FET. The switching FET for SEPIC mode sees a maximum voltage of VIN(max) + VOUT, 25% higher rating is recommended. Current rating is also recommended to be 25% higher than peak current, which can be calculated with Equation 19. RDSON must be as low as possible — less than 20 mΩ is recommended. Thermal resistance (RθJA) must also be low to dissipate heat from power loss on switching FET. Typical rise/fall time values recommended are less than 10 ns.
where