JAJSA91D August   2005  – August 2016 LPV511

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: 3 V
    6. 6.6 Electrical Characteristics: 5 V
    7. 6.7 Electrical Characteristics: 12 V
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Input Stage
      2. 7.4.2 Output Stage
      3. 7.4.3 Driving Capacitive Load
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Battery Current Sensing
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Summing Amplifier
    3. 8.3 Dos and Don'ts
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 デバイス・サポート
      1. 11.1.1 開発サポート
    2. 11.2 ドキュメントのサポート
      1. 11.2.1 関連資料
    3. 11.3 コミュニティ・リソース
    4. 11.4 商標
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
VIN Differential 2.1 V
Supply voltage (V+ - V−) 13.2 V
Voltage at input and output pins V+ + 0.3 V− − 0.3 V
Short-circuit duration See(3)
Junction temperature, TJ(4) 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/ Distributors for availability and specifications.
(3) Output short-circuit duration is infinite for V+ < 6 V at room temperature and below. For V+ > 6 V, allowable short-circuit duration is 1.5 ms.
(4) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PC board.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)(2) ±2000 V
Machine model (MM)(3) ±200
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) Human Body Model: 1.5 kΩ in series with 100 pF.
(3) Machine Model: 0 Ω in series with 200 pF.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Temperature(1) –40 85 °C
Supply voltage (V+ – V−) 2.7 12 V
(1) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA) / RθJA. All numbers apply for packages soldered directly onto a PC board.

6.4 Thermal Information

THERMAL METRIC(1) LPV511 UNIT
DCK (SC70)
5 PINS
RθJA Junction-to-ambient thermal resistance 278 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 105.8 °C/W
RθJB Junction-to-board thermal resistance 56.4 °C/W
ψJT Junction-to-top characterization parameter 3 °C/W
ψJB Junction-to-board characterization parameter 55 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics: 3 V

Unless otherwise specified, all limits are specified for TJ = 25°C, V+ = 3 V, V− = 0 V, VCM = VO = V+/2, and RL = 100 kΩ to V+/2.(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
VOS Input offset voltage TJ = 25°C ±0.2 ±3 mV
TJ = –40°C to 85°C ±3.8
TC VOS Input offset voltage drift(4) TJ = 25°C ±0.3 µV/°C
TJ = –40°C to 85°C ±15
IB Input bias current(5) VCM = 0.5 V TJ = 25°C –1000 –320 pA
TJ = –40°C to 85°C –1600
VCM = 2.5 V TJ = 25°C 110 800
TJ = –40°C to 85°C 1900
IOS Input offset current ±10 pA
CMRR Common mode rejection ratio VCM Stepped from 0 V to 1.5 V TJ = 25°C 77 100 dB
TJ = –40°C to 85°C 70
VCM Stepped from 2.4 V to 3 V TJ = 25°C 75 115
TJ = –40°C to 85°C 68
VCM Stepped from 0.5 V to 2.5 V TJ = 25°C 60 80
TJ = –40°C to 85°C 56
PSRR Power supply rejection ratio V+ = 2.7 V to 5 V,
VCM = 0.5 V		 TJ = 25°C 72 114 dB
TJ = –40°C to 85°C 68
V+ = 3 V to 5 V,
VCM = 0.5 V		 TJ = 25°C 76 115
TJ = –40°C to 85°C 72
V+ = 5 V to 12 V,
VCM = 0.5 V		 TJ = 25°C 84 117
TJ = –40°C to 85°C 80
CMVR Input common-mode voltage CMRR ≥ 50 dB TJ = 25°C −0.1 3.1 V
TJ = –40°C to 85°C 0 3
AVOL Large signal voltage gain Sinking, VO = 2.5 V TJ = 25°C 75 105 dB
TJ = –40°C to 85°C 70
Sourcing, VO = 0.5 V TJ = 25°C 75 105
TJ = –40°C to 85°C 70
VO Output swing high VID = 100 mV TJ = 25°C 2.85 2.9 V
TJ = –40°C to 85°C 2.8
Output swing low VID = −100 mV TJ = 25°C 100 150
TJ = –40°C to 85°C 200
ISC Output short circuit current(6) Sourcing
VID = 100 mV		 −500 −225 µA
Sinking
VID = −100 mV 		225 1350
IS Supply current TJ = 25°C 0.88 1.2 µA
TJ = –40°C to 85°C 1.5
SR Slew rate(7) AV = 1, VO ramps from 0.5 V to 2.5 V TJ = 25°C 5.25 7.7 V/ms
TJ = –40°C to 85°C 3.10
GBW Gain bandwidth product RL = 1 MΩ, CL= 50 pF 27 kHz
Phase margin RL = 1 MΩ, CL= 50 pF 53 º
en Input-referred voltage noise f = 100 Hz 320 nV/√Hz
in Input-referred current noise f = 10 Hz 0.02 pA/√Hz
f = 1 kHz 0.01
(1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the Statistical Quality Control (SQC) method.
(3) Typical values represent the most likely parametric norm at the time of characterization.
(4) Offset voltage drift is specified by design and/or characterization and is not tested in production. Offset voltage drift is determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) The Short-Circuit Test is a momentary test. See Note 3 in Absolute Maximum Ratings.
(7) Slew rate is the average of the rising and falling slew rates.

6.6 Electrical Characteristics: 5 V

Unless otherwise specified, all limits are specified for TJ = 25°C, V+ = 5 V, V− = 0 V, VCM = VO = V+/2, and RL = 100 kΩ to V+/2.(1)
PARAMETER TEST CONDITIONS MIN(2) TYP(3) MAX(2) UNIT
VOS Input offset voltage TJ = 25°C ±0.2 ±3 mV
TJ = –40°C to 85°C ±3.8
TC VOS Input offset voltage drift(4) TJ = 25°C ±0.3 µV/°C
TJ = –40°C to 85°C ±15
IB Input bias current(5) VCM = 0.5 V TJ = 25°C –1000 –320 pA
TJ = –40°C to 85°C –1600
VCM = 4.5 V TJ = 25°C 110 800
TJ = –40°C to 85°C 1900
IOS Input offset current ±10 pA
CMRR Common mode rejection ratio VCM Stepped from
0 V to 2.5 V		 TJ = 25°C 80 115 dB
TJ = –40°C to 85°C 73
VCM Stepped from
4.4 to 5 V		 TJ = 25°C 75 107
TJ = –40°C to 85°C 68
VCM Stepped from
0.5 to 4.5 V		 TJ = 25°C 65 87
TJ = –40°C to 85°C 62
PSRR Power supply rejection ratio V+ = 2.7 V to 5 V,
VCM = 0.5 V		 TJ = 25°C 72 114 dB
TJ = –40°C to 85°C 68
V+ = 3 V to 5 V,
VCM = 0.5 V		 TJ = 25°C 76 115
TJ = –40°C to 85°C 72
V+ = 5 V to 12 V,
VCM = 0.5 V		 TJ = 25°C 84 117
TJ = –40°C to 85°C 80
CMVR Input common-mode voltage CMRR ≥ 50 dB TJ = 25°C —0.1 5.1 V
TJ = –40°C to 85°C 0 5
AVOL Large signal voltage gain Sinking, VO = 4.5 V TJ = 25°C 78 110 dB
TJ = –40°C to 85°C 73
Sourcing, VO = 0.5 V TJ = 25°C 78 110
TJ = –40°C to 85°C 73
VO Output swing high VID = 100 mV TJ = 25°C 4.8 4.89 V
TJ = –40°C to 85°C 4.75
Output swing low VID = −100 mV TJ = 25°C 110 200 mV
TJ = –40°C to 85°C 250
ISC Output short circuit current(6) Sourcing to V−
VID = 100 mV 		–550 –225 µA
Sinking to V+
VID = −100 mV 		225 1350
IS Supply current TJ = 25°C 0.97 1.2 µA
TJ = –40°C to 85°C 1.5
SR Slew rate(7) AV = 1, VO ramps from
0.5 V to 4.5 V		 TJ = 25°C 5.25 7.5 V/ms
TJ = –40°C to 85°C 3.1
GBW Gain bandwidth product RL = 1 MΩ, CL= 50 pF 27 kHz
Phase margin RL = 1 MΩ, CL= 50 pF 53 °
en Input-referred voltage noise f = 100 Hz 320 nV/√Hz
in Input-referred current noise f = 10 Hz 0.02 pA/√Hz
f = 1 kHz 0.01
(1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the Statistical Quality Control (SQC) method.
(3) Typical values represent the most likely parametric norm at the time of characterization.
(4) Offset voltage drift is specified by design and/or characterization and is not tested in production. Offset voltage drift is determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) The Short-Circuit Test is a momentary test. See Note 3 in Absolute Maximum Ratings.
(7) Slew rate is the average of the rising and falling slew rates.

6.7 Electrical Characteristics: 12 V

Unless otherwise specified, all limits are specified for TJ = 25°C, V+ = 12 V, V− = 0 V, VCM = VO = V+/2, and RL = 100 kΩ to V+/2.(1)
PARAMETER TEST CONDITIONS MIN(2) TYP (3) MAX (2) UNIT
VOS Input offset voltage TJ = 25°C ±0.2 ±3 mV
TJ = –40°C to 85°C ±3.8
TC VOS Input offset voltage drift(4) TJ = 25°C ±0.3 µV/°C
TJ = –40°C to 85°C ±15
IB Input bias current(5) VCM = 0.5 V TJ = 25°C −1000 −320 pA
TJ = –40°C to 85°C −1600
VCM = 11.5 V TJ = 25°C 110 800
TJ = –40°C to 85°C 1900
IOS Input offset current ±10 pA
CMRR Common mode rejection ratio VCM Stepped from
0 V to 6 V		 TJ = 25°C 75 115 dB
TJ = –40°C to 85°C 70
VCM Stepped from
11.4 V to 12 V		 TJ = 25°C 75 110
TJ = –40°C to 85°C 68
VCM Stepped from
0.5 V to 11.5 V		 TJ = 25°C 70 97
TJ = –40°C to 85°C 65
PSRR Power supply rejection ratio V+ = 2.7 V to 5 V,
VCM = 0.5 V		 TJ = 25°C 72 114
TJ = –40°C to 85°C 68
V+ = 3 V to 5 V,
VCM = 0.5 V		 TJ = 25°C 76 115
TJ = –40°C to 85°C 72
V+ = 5 V to 12 V,
VCM = 0.5 V		 TJ = 25°C 84 117
TJ = –40°C to 85°C 80
CMVR Input common-mode voltage CMRR ≥ 50 dB TJ = 25°C −0.1 12.1 V
TJ = –40°C to 85°C 0 12
AVOL Large signal voltage gain Sinking, VO = 0.5 V TJ = 25°C 89 110 dB
TJ = –40°C to 85°C 84
Sourcing, VO = 11.5 V TJ = 25°C 89 110
TJ = –40°C to 85°C 84
VO Output swing high VID = 100 mV TJ = 25°C 11.8 11.85 V
TJ = –40°C to 85°C 11.72
Output swing low VID = −100 mV TJ = 25°C 150 200 mV
TJ = –40°C to 85°C 280
ISC Output short circuit current(6) Sourcing
VID = 100 mV 		−650 −200 µA
Sinking
VID = −100 mV 		200 1300
IS Supply current TJ = 25°C 1.2 1.75 µA
TJ = –40°C to 85°C 2.5
SR Slew rate(7) AV = 1, VO ramped from 1 V to 11 V 5.25 7 V/ms
3.1
GBW Gain bandwidth product RL = 1 MΩ, CL= 50 pF 25 kHz
Phase margin RL = 1 MΩ, CL= 50 pF 52 °
en Input-referred voltage noise f = 100 Hz 320 nV/√Hz
in Input-referred current noise f = 10 Hz 0.02 pA/√Hz
f = 1 kHz 0.01
(1) Electrical table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of the device.
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using the Statistical Quality Control (SQC) method.
(3) Typical values represent the most likely parametric norm at the time of characterization.
(4) Offset voltage drift is specified by design and/or characterization and is not tested in production. Offset voltage drift is determined by dividing the change in VOS at temperature extremes into the total temperature change.
(5) Positive current corresponds to current flowing into the device.
(6) The Short-Circuit Test is a momentary test. See Note 3 in Absolute Maximum Ratings.
(7) Slew rate is the average of the rising and falling slew rates.

6.8 Typical Characteristics

At TJ = 25°C, unless otherwise specified.
LPV511 20117004.gif
Figure 1. Supply Current vs Supply Voltage
LPV511 20117005.gif
Figure 3. Input Offset Voltage vs Input Common Mode
LPV511 20117011.gif
Figure 5. Sourcing Current vs Output Voltage
LPV511 20117010.gif
Figure 7. Sourcing Current vs Output Voltage
LPV511 20117014.gif
Figure 9. Input Bias Current vs Common Mode Voltage
LPV511 20117016.gif
Figure 11. Input Bias Current vs Common Mode Voltage
LPV511 20117023.gif
Figure 13. Frequency Response vs Temperature
LPV511 20117022.gif
Figure 15. Frequency Response vs Temperature
LPV511 20117021.gif
Figure 17. Frequency Response vs RL
LPV511 20117017.gif
Figure 19. Frequency Response vs CL
LPV511 20117013.gif
Figure 21. Frequency Response vs CL
LPV511 20117031.gif
Figure 23. Noninverting Small-Signal Pulse Response
LPV511 20117032.gif
Figure 25. Inverting Small-Signal Pulse Response
LPV511 20117006.gif
Figure 2. Input Offset Voltage vs Input Common Mode
LPV511 20117007.gif
Figure 4. Input Offset Voltage vs Input Common Mode
LPV511 20117009.gif
Figure 6. Sinking Current vs Output Voltage
LPV511 20117008.gif
Figure 8. Sinking Current vs Output Voltage
LPV511 20117015.gif
Figure 10. Input Bias Current vs Common Mode Voltage
LPV511 20117027.gif
Figure 12. PSRR vs Frequency
LPV511 20117024.gif
Figure 14. Frequency Response vs Temperature
LPV511 20117020.gif
Figure 16. Frequency Response vs RL
LPV511 20117019.gif
Figure 18. Frequency Response vs RL
LPV511 20117018.gif
Figure 20. Frequency Response vs CL
LPV511 20117026.gif
Figure 22. Voltage Noise vs Frequency
LPV511 20117030.gif
Figure 24. Noninverting Large-Signal Pulse Response
LPV511 20117033.gif
Figure 26. Inverting Large-Signal Pulse Response