SLLS567F May   2003  – July 2024 MAX211

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Protection
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Electrical Characteristics, Driver
    7. 5.7 Switching Characteristics, Driver
    8. 5.8 Electrical Characteristics, Receiver
    9. 5.9 Switching Characteristics, Receiver
  7. Parameter Measurement Information
  8. Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Capacitor Selection
      2. 8.1.2 Electrostatic Discharge (ESD) Protection
      3. 8.1.3 ESD Test Conditions
      4. 8.1.4 Human-Body Model
      5. 8.1.5 Machine Model
  10. Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ

Switching Characteristics, Driver

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see (3))
PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT
Maximum data rate CL = 50pF to 1000pF, One DOUT switching, RL = 3kΩ to 7kΩ, See Figure 6-2 120 kbit/s
tPLH (D) Propagation delay time, low- to high-level output CL = 2500pF, All drivers loaded, RL = 3kΩ, See Figure 6-2 2 μs
tPHL (D) Propagation delay time, high- to low-level output CL = 2500pF, All drivers loaded, RL = 3kΩ, See Figure 6-2 2 μs
tsk(p) Pulse skew(2) CL = 150pF to 2500pF, RL = 3kΩ to 7kΩ, See Figure 6-3 300 ns
SR(tr) Slew rate, transition region (see Figure 6-2) CL = 50pF to 1000pF, VCC = 5V RL = 3kΩ to 7kΩ, 3 6 30 V/μs
All typical values are at VCC = 5V, and TA = 25°C.
Pulse skew is defined as |tPLH − tPHL| of each channel of the same device.
Test conditions are C1−C4 = 0.1µF at VCC = 5V ± 0.5V.