JAJSUY7 May 2024 MCT8316A-Q1
PRODUCTION DATA
The MCT8316A-Q1 consists of an integrated 95-mΩ (combined high-side and low-side FETs' on-state resistance) NMOS FETs connected in a three-phase bridge configuration. A doubler charge pump provides the proper gate-bias voltage to the high-side NMOS FETs across a wide operating-voltage range in addition to providing 100% duty-cycle support. An internal linear regulator provides the gate-bias voltage for the low-side MOSFETs.