JAJSVM3 November   2024 MMBZ30VCL-Q1

PRODUCTION DATA  

  1.   1
  2. 1特長
  3. 2アプリケーション
  4. 3概要
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings—AEC Specification
    3. 5.3 ESD Ratings—IEC Specification
    4. 5.4 ESD Ratings - ISO Specification
    5. 5.5 Recommended Operating Conditions
    6. 5.6 Thermal Information
    7. 5.7 Electrical Characteristics
    8. 5.8 Typical Characteristics
  7. 6Device and Documentation Support
    1. 6.1 Documentation Support
      1. 6.1.1 Related Documentation
    2. 6.2 ドキュメントの更新通知を受け取る方法
    3. 6.3 サポート・リソース
    4. 6.4 Trademarks
    5. 6.5 静電気放電に関する注意事項
    6. 6.6 用語集
  8. 7Revision History
  9. 8Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

5.7 Electrical Characteristics

over TA = 25°C (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VFForward VoltageIF = 10mA, TA = 25°C1.1V
VRWMReverse stand-off voltageTA = 25°C24V
VBRBreakdown voltage (1)IT = 10mA, TA = 25°C24.834.8V
VCLAMPClamping voltage (2) IPPM = 0.5A, tp = 10/1000µs3140V
ILEAKLeakage currentVIO = ±24V125nA
SZTemperature CoefficientIZ = 10mA13mV/C
CLLine capacitanceVIO = 0V, f = 1MHz, Vpp = 30mV4.5pF
(1) VBR is defined as the voltage when 10mA is applied and before the device enters into the shallow snapback state
(2) Device stressed with 10/1000 μs exponential decay waveform according to IEC 61643-321