SLASFB5A May   2024  – November 2024 MSPM0L1228-Q1 , MSPM0L2228-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Functional Block Diagram
  6. 5 Device Comparison
    1. 5.1 Device Comparison Chart
  7. 6 Pin Configuration and Functions
    1. 6.1 Pin Diagrams
    2. 6.2 Pin Attributes
      1.      11
    3. 6.3 Signal Descriptions
      1.      13
      2.      14
      3.      15
      4.      16
      5.      17
      6.      18
      7.      19
      8.      20
      9.      21
      10.      22
      11.      23
      12.      24
      13.      25
      14.      26
      15.      27
      16.      28
      17.      29
    4. 6.4 Connections for Unused Pins
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Supply Current Characteristics
      1. 7.5.1 RUN/SLEEP Modes
      2. 7.5.2 STOP/STANDBY Modes
      3. 7.5.3 SHUTDOWN Mode
    6. 7.6  Power Supply Sequencing
      1. 7.6.1 Power Supply Ramp
      2. 7.6.2 POR and BOR
    7. 7.7  VBat Characteristics
    8. 7.8  Flash Memory Characteristics
    9. 7.9  Timing Characteristics
    10. 7.10 Clock Specifications
      1. 7.10.1 System Oscillator (SYSOSC)
      2. 7.10.2 Low Frequency Oscillator (LFOSC)
      3. 7.10.3 Low Frequency Crystal/Clock
      4. 7.10.4 High Frequency Crystal/Clock
    11. 7.11 Digital IO
      1. 7.11.1 Electrical Characteristics
      2. 7.11.2 Switching Characteristics
    12. 7.12 Analog Mux VBOOST
    13. 7.13 ADC
      1. 7.13.1 Electrical Characteristics
      2. 7.13.2 Switching Characteristics
      3. 7.13.3 Linearity Parameters
      4. 7.13.4 Typical Connection Diagram
    14. 7.14 Temperature Sensor
    15. 7.15 VREF
      1. 7.15.1 Electrical Characteristics ADC
      2. 7.15.2 Electrical Characteristics (Comparator)
      3. 7.15.3 Voltage Characterisitcs (ADC)
      4. 7.15.4 Voltage Characterisitcs (Comparator)
    16. 7.16 Comparator (COMP)
      1. 7.16.1 Comparator Electrical Characteristics
    17. 7.17 LCD
    18. 7.18 I2C
      1. 7.18.1 I2C Characteristics
      2. 7.18.2 I2C Filter
      3. 7.18.3 I2C Timing Diagram
    19. 7.19 SPI
      1. 7.19.1 SPI
      2. 7.19.2 SPI Timing Diagram
    20. 7.20 UART
    21. 7.21 TIMx
    22. 7.22 TRNG
      1. 7.22.1 TRNG Electrical Characteristics
      2. 7.22.2 TRNG Switching Characteristics
    23. 7.23 Emulation and Debug
      1. 7.23.1 SWD Timing
  9. 8 Detailed Description
    1. 8.1  Functional Block Diagram
    2. 8.2  CPU
    3. 8.3  Operating Modes
      1. 8.3.1 Functionality by Operating Mode (MSPM0Lx22x)
    4. 8.4  Security
    5. 8.5  Power Management Unit (PMU)
    6. 8.6  Clock Module (CKM)
    7. 8.7  DMA
    8. 8.8  Events
    9. 8.9  Memory
      1. 8.9.1 Memory Organization
      2. 8.9.2 Peripheral File Map
      3. 8.9.3 Peripheral Interrupt Vector
    10. 8.10 Flash Memory
    11. 8.11 SRAM
    12. 8.12 GPIO
    13. 8.13 IOMUX
    14. 8.14 ADC
    15. 8.15 Temperature Sensor
    16. 8.16 LFSS
    17. 8.17 VREF
    18. 8.18 COMP
    19. 8.19 TRNG
    20. 8.20 AESADV
    21. 8.21 Keystore
    22. 8.22 CRC
    23. 8.23 UART
    24. 8.24 I2C
    25. 8.25 SPI
    26. 8.26 IWDT
    27. 8.27 WWDT
    28. 8.28 RTC_A
    29. 8.29 Timers (TIMx)
    30. 8.30 LCD
    31. 8.31 Device Analog Connections
    32. 8.32 Input/Output Diagrams
    33. 8.33 Serial Wire Debug Interface
    34. 8.34 Bootstrap Loader (BSL)
    35. 8.35 Device Factory Constants
    36. 8.36 Identification
  10. 9 Applications, Implementation, and Layout
    1. 9.1 Typical Application
      1. 9.1.1 Schematic
  11. 10Device and Documentation Support
    1. 10.1 Getting Started and Next Steps
    2. 10.2 Device Nomenclature
    3. 10.3 Tools and Software
    4. 10.4 Documentation Support
    5. 10.5 Support Resources
    6. 10.6 Trademarks
    7. 10.7 Electrostatic Discharge Caution
    8. 10.8 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • RHB|32
  • RGE|24
  • PT|48
サーマルパッド・メカニカル・データ

7.8 Flash Memory Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Supply
VDDPGM/ERASE Program and erase supply voltage 1.62 3.6 V
IDDERASE Supply current from VDD during erase operation Supply current delta 10 mA
IDDPGM Supply current from VDD during program operation Supply current delta 10 mA
Endurance
NWEC(HI_ENDURANCE) Erase/program cycle endurance for any 32 sectors of flash  (1) 100 k cycles per sector
NWEC (NORMAL_ENDURANCE)  Erase/program cycle endurance (Flash not used for HI_ENDURANCE) (1) 10 k cycles per sector 
NE(MAX)  Total erase operations before failure (2) 802 k erase operations
NW(MAX) Write operations per word line before sector erase (3) 83 write operations
Retention
tRET_85 Flash memory data retention -40°C <= Tj <= 85°C 60 years
tRET_105 Flash memory data retention -40°C <= Tj <= 105°C 11.4 years
Program and Erase Timing
tPROG (WORD, 64) Program time for flash word (4) (6) 50 275 µs
tPROG (SEC, 64) Program time for 1kB sector (5) (6) 6.4 ms
tERASE (SEC) Sector erase time <10k erase/program cycles 20 200 ms
tERASE (BANK) Bank erase time <10k erase/program cycles 22 220 ms
(1) Up to 32 application-chosen sectors from the main flash bank(s) or data bank can be used as high endurance sectors. This enables applications that frequently update flash data such as EEPROM emulation. 
(2) Total number of cumulative erase operations supported by the flash before failure. A sector erase or bank erase operation is considered to be one erase operation.
(3) Maximum number of write operations allowed per word line before the word line must be erased. If additional writes to the same word line are required, a sector erase is required once the maximum number of write operations per word line is reached.
(4) Program time is defined as the time from when the program command is triggered until the command completion interrupt flag is set in the flash controller.
(5) Sector program time is defined as the time from when the first word program command is triggered until the final word program command completes and the interrupt flag is set in the flash controller.  This time includes the time needed for software to load each flash word (after the first flash word) into the flash controller during programming of the sector.
(6) Flash word size is 64 data bits (8 bytes). On devices with ECC, the total flash word size is 72 bits (64 data bits plus 8 ECC bits).