9.3.1 Ultralow Leakage Current

The MUX50x provide extremely low on- and off-leakage currents. The MUX50x are capable of switching signals from high source-impedance inputs into a high input-impedance op amp with minimal offset error because of these ultralow leakage currents. Figure 37 shows typical leakage currents of the MUX50x versus temperature.

Figure 37. Leakage Current vs Temperature

9.3.2 Ultralow Charge Injection

The MUX50x have a simple transmission gate topology, as shown in Figure 38. Any mismatch in the stray capacitance associated with the NMOS and PMOS transistors creates an output level change whenever the switch is opened or closed.

Figure 38. Transmission Gate Topology

The MUX50x have special charge-injection cancellation circuitry that reduces the source-to-drain charge injection to as low as 0.3 pC at V_S = 0 V, and ±0.6 pC in the full signal range, as shown in Figure 39.

Figure 39. Source-to-Drain Charge Injection vs Source or Drain voltage

The drain-to-source charge injection becomes important when the device is used as a demultiplexer (demux), where D becomes the input and Sx becomes the output. Figure 40 shows the drain-to-source charge injection across the full signal range.

Figure 40. Drain-to-Source Charge Injection vs Source or Drain voltage

9.3.3 Bidirectional Operation

The MUX50x are operable as both a mux or demux. The source (Sx, SxA, SxB) and drain (D, DA, DB) pins of the MUX50x are used either as input or output. Each MUX50x channel has very similar characteristics in both directions.

9.3.4 Rail-to-Rail Operation

A valid analog signal for the MUX50x ranges from V_SS to V_DD. The input signal to the MUX50x can swing from V_SS to V_DD without any significant degradation in performance. The on-resistance of the MUX50x varies with input signal, as shown in Figure 41.

Figure 41. On-Resistance vs Source or Drain Voltage