JAJSCO9B December 2016 – November 2017 OPA170-Q1 , OPA2170-Q1 , OPA4170-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | |
---|---|---|---|
Supply voltage | –20 | 20 | V |
Single supply voltage | 40 | V | |
Signal input pin voltage | (V–) – 0.5 | (V+) + 0.5 | V |
Signal input pin current | –10 | 10 | mA |
Output short-circuit current(2) | Continuous | ||
Operating ambient temperature, TA | –55 | 150 | °C |
Junction temperature, TJ | 150 | °C | |
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±4000 | V |
Charged-device model (CDM), per AEC Q100-011 | ±750 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VS | Supply voltage (V+ – V–) | 2.7 | 36 | V |
TA | Operating temperature | –40 | 125 | °C |
THERMAL METRIC(1) | OPA170-Q1 | UNIT | |
---|---|---|---|
DBV (SOT-23) | |||
5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 245.8 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 133.9 | °C/W |
RθJB | Junction-to-board thermal resistance | 83.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 18.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 83.1 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | °C/W |
THERMAL METRIC(1) | OPA2170-Q1 | UNIT | |
---|---|---|---|
DGK (VSSOP) | |||
8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 180 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 55 | °C/W |
RθJB | Junction-to-board thermal resistance | 130 | °C/W |
ψJT | Junction-to-top characterization parameter | 5.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 120 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | °C/W |
THERMAL METRIC(1) | OPA4170-Q1 | UNIT | |
---|---|---|---|
PW (TSSOP) | |||
14 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 106.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 24.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 59.3 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.6 | °C/W |
ψJB | Junction-to-board characterization parameter | 54.3 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
OFFSET VOLTAGE | ||||||
VOS | Input offset voltage | TA = 25°C | 0.25 | ±1.8 | mV | |
TA = –40°C to 125°C | ±2 | mV | ||||
dVOS/dT | Input offset voltage drift | TA = –40°C to 125°C | ±0.3 | ±2 | µV/°C | |
PSRR | Input offset voltage vs power supply | VS = 4 V to 36 V TA = –40°C to 125°C |
1 | ±5 | µV/V | |
Channel separation, dc | 5 | µV/V | ||||
INPUT BIAS CURRENT | ||||||
IB | Input bias current | TA = 25°C | ±8 | ±15 | pA | |
TA = –40°C to 125°C (OPA170-Q1 and OPA2170-Q1) | ±3.5 | nA | ||||
TA = –40°C to 125°C (OPA4170-Q1) | ±16 | |||||
IOS | Input offset current | TA = 25°C | ±4 | ±15 | pA | |
TA = –40°C to 125°C (OPA170-Q1 and OPA2170-Q1) | ±3.5 | nA | ||||
TA = –40°C to 125°C (OPA4170-Q1) | ±16 | |||||
NOISE | ||||||
Input voltage noise | ƒ = 0.1 Hz to 10 Hz | 2 | µVPP | |||
en | Input voltage noise density | ƒ = 100 Hz | 22 | nV/√Hz | ||
ƒ = 1 kHz | 19 | nV/√Hz | ||||
INPUT VOLTAGE | ||||||
VCM | Common-mode voltage range(1) | (V–) – 0.1 | (V+) – 2 | V | ||
CMRR | Common-mode rejection ratio | VS = ±2 V, (V–) – 0.1 V < VCM < (V+) – 2 V TA = –40°C to 125°C |
90 | 104 | dB | |
VS = ±18 V, (V–) – 0.1 V < VCM < (V+) – 2 V TA = –40°C to 125°C |
104 | 120 | dB | |||
INPUT IMPEDANCE | ||||||
Differential | 100 || 3 | MΩ || pF | ||||
Common-mode | 6 || 3 | 1012 Ω || pF | ||||
OPEN-LOOP GAIN | ||||||
AOL | Open-loop voltage gain | VS = 4 V to 36 V (V–) + 0.35 V < VO < (V+) – 0.35 V TA = –40°C to 125°C |
110 | 130 | dB | |
FREQUENCY RESPONSE | ||||||
GBP | Gain bandwidth product | 1.2 | MHz | |||
SR | Slew rate | G = 1 | 0.4 | V/µs | ||
tS | Settling time | To 0.1%, VS = ±18 V, G = 1 10-V step | 20 | µs | ||
To 0.01% (12-bit), VS = ±18 V, G = 1 10-V step |
28 | µs | ||||
Overload recovery time | VIN × Gain > VS | 2 | µs | |||
THD+N | Total harmonic distortion + noise | G = 1, ƒ = 1 kHz, VO = 3 VRMS | 0.0002% | |||
OUTPUT | ||||||
VO | Voltage output swing from positive rail | IL = 0 mA VS = 4 V to 36 V |
10 | mV | ||
IL sourcing 1 mA VS = 4 V to 36 V |
115 | mV | ||||
VO | Voltage output swing from negative rail | IL = 0 mA VS = 4 V to 36 V |
8 | mV | ||
IL sinking 1 mA VS = 4 V to 36 V |
70 | mV | ||||
VO | Voltage output swing from rail | VS = 5 V RL = 10 kΩ TA = –40°C to 125°C |
(V–) + 0.03 | (V+) – 0.05 | V | |
RL = 10 kΩ AOL ≥ 110 dB TA = –40°C to 125°C |
(V–) + 0.35 | (V+) – 0.35 | V | |||
ISC | Short-circuit current | –20 | 17 | mA | ||
CLOAD | Capacitive load drive | See Typical Characteristics | pF | |||
RO | Open-loop output resistance | ƒ = 1 MHz IO = 0 A |
900 | Ω | ||
POWER SUPPLY | ||||||
VS | Specified voltage range | 2.7 | 36 | V | ||
IQ | Quiescent current per amplifier | IO = 0 A TA = 25°C |
110 | 145 | µA | |
IO = 0 A TA = –40°C to 125°C |
155 | µA | ||||
TEMPERATURE | ||||||
Specified range | –40 | 125 | °C | |||
Operating range | –55 | 150 | °C |
DESCRIPTION | FIGURE |
---|---|
Offset Voltage Production Distribution | Figure 1 |
Offset Voltage Drift Distribution | Figure 2 |
Offset Voltage vs Temperature | Figure 3 |
Offset Voltage vs Common-Mode Voltage | Figure 4 |
Offset Voltage vs Common-Mode Voltage (Upper Stage) | Figure 5 |
Offset Voltage vs Power Supply | Figure 6 |
IB and IOS vs Common-Mode Voltage | Figure 7 |
Input Bias Current vs Temperature | Figure 8 |
Output Voltage Swing vs Output Current (Maximum Supply) | Figure 9 |
CMRR and PSRR vs Frequency (Referred-to-Input) | Figure 10 |
CMRR vs Temperature | Figure 11 |
PSRR vs Temperature | Figure 12 |
0.1-Hz to 10-Hz Noise | Figure 13 |
Input Voltage Noise Spectral Density vs Frequency | Figure 14 |
THD+N Ratio vs Frequency | Figure 15 |
THD+N vs Output Amplitude | Figure 16 |
Quiescent Current vs Temperature | Figure 17 |
Quiescent Current vs Supply Voltage | Figure 18 |
Open-Loop Gain and Phase vs Frequency | Figure 19 |
Closed-Loop Gain vs Frequency | Figure 20 |
Open-Loop Gain vs Temperature | Figure 21 |
Open-Loop Output Impedance vs Frequency | Figure 22 |
Small-Signal Overshoot vs Capacitive Load (100-mV Output Step) | Figure 23, Figure 24 |
No Phase Reversal | Figure 25 |
Positive Overload Recovery | Figure 26 |
Negative Overload Recovery | Figure 27 |
Small-Signal Step Response (100 mV) | Figure 28, Figure 29 |
Large-Signal Step Response | Figure 30, Figure 31 |
Large-Signal Settling Time (10-V Positive Step) | Figure 32 |
Large-Signal Settling Time (10-V Negative Step) | Figure 33 |
Short-Circuit Current vs Temperature | Figure 34 |
Maximum Output Voltage vs Frequency | Figure 35 |
EMIRR IN+ vs Frequency | Figure 36 |