SBOS426D November 2008 – October 2016 OPA209 , OPA2209 , OPA4209
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | Supply voltage, VS = (V+) – (V–) | 40 | V | |
Signal input pins(2) | (V–) – 0.5 | (V+) + 0.5 | V | |
Current | Signal input pins(2) | –10 | 10 | mA |
Output short circuit(3) | Continuous | |||
Temperature | Operating, TA | –55 | 150 | °C |
Junction, TJ | 200 | °C | ||
Storage, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±3000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VS | Specified voltage | ±2.25 | ±18 | V |
Specified temperature | –40 | 125 | °C | |
TA | Operating temperature | –55 | 150 | °C |
THERMAL METRIC(1) | OPA209 | UNIT | |||
---|---|---|---|---|---|
DBV (SOT-23) | D (SOIC) | DGK (VSSOP) | |||
5 PINS | 8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 204.9 | 135.5 | 142.6 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 200 | 73.7 | 46.9 | °C/W |
RθJB | Junction-to-board thermal resistance | 113.1 | 61.9 | 63.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 38.2 | 19.7 | 5.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 104.9 | 54.8 | 62.8 | °C/W |
THERMAL METRIC(1) | OPA2209 | UNIT | ||
---|---|---|---|---|
D (SOIC) | DGK (VSSOP) | |||
8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 134.3 | 132.7 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 72.1 | 38.5 | °C/W |
RθJB | Junction-to-board thermal resistance | 60.7 | 52.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 18.2 | 2.4 | °C/W |
ψJB | Junction-to-board characterization parameter | 53.8 | 52.8 | °C/W |
THERMAL METRIC(1) | OPA4209 | UNIT | |
---|---|---|---|
PW (TSSOP) | |||
14 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 112.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 26.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 61 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 59.2 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||||
---|---|---|---|---|---|---|---|---|---|
OFFSET VOLTAGE | |||||||||
VOS | Input offset voltage | VS = ±15 V, VCM = 0 V | ±35 | ±150 | µV | ||||
dVOS/dT | Input offset voltage drift | TA = –40°C to 125°C | 1 | 3 | µV/°C | ||||
PSRR | vs power supply | VS = ±2.25 V to ±18 V | TA = 25°C | 0.05 | 0.5 | µV/V | |||
TA = –40°C to 125°C | 1 | ||||||||
Channel separation | DC (dual and quad versions) | 1 | µV/V | ||||||
INPUT BIAS CURRENT | |||||||||
IB | Input bias current | VCM = 0 V | TA = 25°C | ±1 | ±4.5 | nA | |||
TA = –40°C to 85°C | ±8 | ||||||||
TA = –40°C to 125°C | ±15 | ||||||||
IOS | Input offset current | VCM = 0 V | TA = 25°C | ±0.7 | ±4.5 | nA | |||
TA = –40°C to 85°C | ±8 | ||||||||
TA = –40°C to 125°C | ±15 | ||||||||
NOISE | |||||||||
en | Input voltage noise | f = 0.1 Hz to 10 Hz | 0.13 | µVPP | |||||
Noise density | f = 10 Hz | 3.3 | nV/√Hz | ||||||
f = 100 Hz | 2.25 | ||||||||
f = 1 kHz | 2.2 | ||||||||
In | Input current noise density | f = 1 kHz | 500 | fA/√Hz | |||||
INPUT VOLTAGE RANGE | |||||||||
VCM | Common-mode voltage range | (V–) + 1.5 | (V+) – 1.5 | V | |||||
CMRR | Common-mode rejection ratio | (V–) + 1.5 V < VCM < (V+) – 1.5 V, TA = –40°C to 125°C | 120 | 130 | dB | ||||
INPUT IMPEDANCE | |||||||||
Differential | 200 || 4 | kΩ || pF | |||||||
Common-mode | 109 || 2 | Ω || pF | |||||||
OPEN-LOOP GAIN | |||||||||
AOL | Open-loop voltage gain | (V–) + 0.2 V < VO < (V+) – 0.2 V, RL = 10 kΩ |
TA = 25°C | 126 | 132 | dB | |||
TA = –40°C to 125°C | 120 | ||||||||
(V–) + 0.6 V < VO < (V+) – 0.6 V, RL = 600 Ω(1) |
TA = 25°C | 114 | 120 | ||||||
TA = –40°C to 125°C | 110 | ||||||||
FREQUENCY RESPONSE | |||||||||
GBW | Gain bandwidth product | 18 | MHz | ||||||
SR | Slew rate | 6.4 | V/µs | ||||||
Φm | Phase margin | RL = 10 kΩ, CL = 25 pF | 80 | ° | |||||
tS | Settling time | 0.1%, G = –1, 10-V step, CL = 100 pF | 2.1 | µs | |||||
0.0015% (16-bit), G = –1, 10-V step, CL = 100 pF | 2.6 | ||||||||
Overload recovery time | G = –1 | < 1 | µs | ||||||
THD+N | Total harmonic distortion + noise | G = +1, f = 1 kHz, VO = 20 VPP, 600 Ω | 0.000025% | ||||||
OUTPUT | |||||||||
Voltage output swing | RL = 10 kΩ, AOL > 130 dB | (V–) + 0.2 | (V+) – 0.2 | V | |||||
RL = 600 Ω, AOL > 114 dB | (V–) + 0.6 | (V+) – 0.6 | |||||||
RL = 10 kΩ, AOL > 120 dB, TA = –40°C to 125°C | (V–) + 0.2 | (V+) – 0.2 | |||||||
ISC | Short-circuit current | VS = ±18 V | ±65 | mA | |||||
CLOAD | Capacitive load drive (stable operation) |
See Typical Characteristics | |||||||
ZO | Open-loop output impedance | See Typical Characteristics | |||||||
POWER SUPPLY | |||||||||
IQ | Quiescent current (per amplifier) |
IO = 0 A | TA = 25°C | 2.2 | 2.5 | mA | |||
TA = –40°C to 125°C | 3.25 |