SBOS099D September 2000 – December 2015 OPA2350 , OPA350 , OPA4350
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Supply voltage | 7 | V | |||
Signal input terminals(2) | Voltage | (V−) − 0.3 | (V+) + 0.3 | V | |
Current | 10 | mA | |||
Open short circuit current(3) | Continuous | ||||
Operating temperature | –55 | 150 | °C | ||
Lead temperature (soldering, 10 s) | 300 | °C | |||
Junction temperature | 150 | °C | |||
Tstg | Storage temperature | –55 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
OPA350, OPA2350, OPA4350 (ALL PACKAGE TYPES) | ||||
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±1000 | V |
OPA350, OPA2350, OPA4350 (SOIC PACKAGES ONLY) | ||||
V(ESD) | Electrostatic discharge | Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 | V |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
Power supply voltage, (V+)-(V-) | 2.7 (±1.35) | 5 (±2.5) | 5.5 (±2.75) | V | |
Specified temperature | –40 | 25 | 85 | °C | |
Operating temperature | –55 | 25 | 150 | °C |
THERMAL METRIC(1) | OPA350, OPA2350 | UNIT | |||
---|---|---|---|---|---|
DGK (VSSOP) | P (PDIP) | D (SOIC) | |||
8 PINS | 8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 169.2 | 53.1 | 140.1 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 62.8 | 42.5 | 89.8 | °C/W |
RθJB | Junction-to-board thermal resistance | 89.8 | 30.3 | 80.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 7.5 | 19.7 | 28.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 88.2 | 30.2 | 80.1 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | N/A | °C/W |
THERMAL METRIC(1) | OPA4350 | UNIT | ||
---|---|---|---|---|
D (SOIC) | DBQ (SSOP) | |||
14 PINS | 16 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 83.8 | 115.8 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 70.7 | 67 | °C/W |
RθJB | Junction-to-board thermal resistance | 59.5 | 58.3 | °C/W |
ψJT | Junction-to-top characterization parameter | 11.6 | 19.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 37.7 | 57.9 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
OFFSET VOLTAGE | |||||||
VOS | Input offset voltage | VS = 5 V | ±150 | ±500 | µV | ||
TA = −40°C to 85°C | ±1 | mV | |||||
vs Temperature | TA = –40°C to 85°C | ±4 | μV/°C | ||||
PSRR | vs Power-supply rejection ratio | VS = 2.7 V to 5.5 V, VCM = 0 V | 40 | 150 | µV/V | ||
175 | |||||||
Channel separation (dual, quad) | DC | 0.15 | µV/V | ||||
INPUT BIAS CURRENT | |||||||
IB | Input bias current | ±0.5 | ±10 | pA | |||
vs Temperature | See Typical Characteristics | ||||||
IOS | Input offset current | ±0.5 | ±10 | pA | |||
NOISE | |||||||
Input voltage noise, f = 100 Hz to 400 kHz | 4 | μVrms | |||||
en | Input voltage noise density, f = 10 kHz | 7 | nV/√Hz | ||||
Input current noise density, f = 100 kHz | 5 | nV/√Hz | |||||
in | Current noise density, f = 10 kHz | 4 | fA/√Hz | ||||
INPUT VOLTAGE RANGE | |||||||
VCM | Common-mode voltage range | TA = −40°C to 85°C | –0.1 | (V+) + 0.1 | V | ||
CMRR | Common-mode rejection ratio | VS = 2.7 V, −0.1 V < VCM < 2.8 V | 66 | 84 | dB | ||
VS = 5.5 V, −0.1 V < VCM < 5.6 V | 74 | 90 | |||||
TA = −40°C to 85°C, VS = 5.5 V, −0.1 V < VCM < 5.6 V |
74 | ||||||
INPUT IMPEDANCE | |||||||
Differential | 1013 || 2.5 | Ω || pF | |||||
Common-mode | 1013 || 6.5 | Ω || pF | |||||
OPEN-LOOP GAIN | |||||||
AOL | Open-loop voltage gain | RL = 10 kΩ, 50 mV < VO < (V+) –50 mV | 100 | 122 | dB | ||
TA = –40°C to 85°C | RL = 10 kΩ, 50 mV < VO < (V+) –50 mV | 100 | |||||
RL = 1 kΩ, 200 mV < VO < (V+) –200 mV | 100 | 120 | |||||
RL = 1 kΩ, 200 mV < VO < (V+) –200 mV | 100 | ||||||
FREQUENCY RESPONSE (CL = 100 pF) | |||||||
GBW | Gain-bandwidth product | G = 1 | 38 | MHz | |||
SR | Slew rate | G = 1 | 22 | V/µs | |||
Settling time | 0.1% | G = ±1, 2-V Step | 0.22 | µs | |||
0.01% | 0.5 | ||||||
Overload recovery time | VIN × G = VS | 0.1 | µs | ||||
THD+N | Total harmonic distortion + noise | RL = 600 Ω, VO = 2.5 VPP(2), G = 1, f = 1 kHz | 0.0006% | ||||
Differential gain error | G = 2, RL = 600 Ω, VO = 1.4 V(3) | 0.17% | |||||
Differential phase error | G = 2, RL = 600 Ω, VO = 1.4 V(3) | 0.17 | ° | ||||
OUTPUT | |||||||
VOUT | Voltage output swing from rail(4) | RL = 10 kΩ, AOL ≥ 100 dB | 10 | 50 | mV | ||
TA = –40°C to 85°C | RL = 10 kΩ, AOL ≥ 100 dB | 50 | |||||
RL = 1 kΩ, AOL ≥ 100 dB | 25 | 200 | |||||
IOUT | Output current | ±40(5) | mA | ||||
ISC | short circuit current | ±80 | mA | ||||
CLOAD | Capacitive load drive | See Typical Characteristics | |||||
POWER SUPPLY | |||||||
VS | Operating voltage range | TA = −40°C to 85°C | 2.7 | 5.5 | V | ||
Minimum operating voltage | 2.5 | V | |||||
IQ | Quiescent current (per amplifier) | IO = 0 | 5.2 | 7.5 | mA | ||
TA = –40°C to 85°C | 8.5 | ||||||
TEMPERATURE RANGE | |||||||
Specified range | –40 | 85 | °C | ||||
Operating range | –55 | 150 | °C |