JAJSKN5B April 2021 – December 2021 OPA3S2859-EP
PRODUCTION DATA
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The OPA3S2859-EP is fabricated on a low-voltage, high-speed, BiCMOS process. The internal, junction breakdown voltages are low for these small geometry devices, and as a result, all device pins are protected with internal ESD protection diodes to the power supplies. There are two antiparallel diodes between the inputs of the amplifier that clamp the inputs during an overrange or fault condition.