SBOS465C January   2009  – January 2016 OPA2348-Q1 , OPA348-Q1 , OPA4348-Q1

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information: OPA348-Q1
    5. 6.5 Thermal Information: OPA2348-Q1, OPA4348-Q1
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Voltage
      2. 7.3.2 Rail-to-Rail Input
      3. 7.3.3 Rail-to-Rail Input
      4. 7.3.4 Input and ESD Protection
      5. 7.3.5 Common-Mode Rejection Ratio (CMRR)
      6. 7.3.6 Common-Mode Voltage Range
      7. 7.3.7 EMI Susceptibility and Input Filtering
      8. 7.3.8 Rail-to-Rail Output
      9. 7.3.9 Capacitive Load and Stability
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Driving Analog-to-Digital Converters (ADCs)
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Amplifier Selection
        2. 8.2.2.2 Passive Component Selection
      3. 8.2.3 Application Curves
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Community Resource
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage, VS V– to V+ 7.5 V
Input voltage, VIN Signal input terminals(2) (V–) – 0.5 V (V+) + 0.5 V V
Input current, IIN Signal input terminals(2) 10 mA
Output short-circuit duration(3) Continuous
Operating free-air temperature, TA –40 150 °C
Operating virtual-junction temperature, TJ 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5 V beyond the supply rails should be current-limited to 10 mA or less.
(3) Short-circuit to ground, one amplifier per package.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) ±2000 V
Charged-device model (CDM), per AEC Q100-011 All pins ±500
Corner pins (1, 7, 8, and 14) ±750
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VS Supply voltage, V– to V+ 2.1 5.5 V
TA Operating free-air temperature –40 125 °C

6.4 Thermal Information: OPA348-Q1

THERMAL METRIC(1) OPA348-Q1 UNIT
DBV (SOT-23) D (SOIC)
5 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 228.5 142.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 99.1 90.2 °C/W
RθJB Junction-to-board thermal resistance 54.6 82.5 °C/W
ψJT Junction-to-top characterization parameter 7.7 39.4 °C/W
ψJB Junction-to-board characterization parameter 53.8 82.0 °C/W
RθJC(bottom) Junction-to-case (bottom) thermal resistance n/a n/a °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Thermal Information: OPA2348-Q1, OPA4348-Q1

THERMAL METRIC(1) OPA2348-Q1 OPA4348-Q1 UNIT
D (SOIC) PW (TSSOP)
8 PINS 14 PINS
RθJA Junction-to-ambient thermal resistance 138.4 121 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 89.5 49.4 °C/W
RθJB Junction-to-board thermal resistance 78.6 62.8 °C/W
ψJT Junction-to-top characterization parameter 29.9 5.9 °C/W
ψJB Junction-to-board characterization parameter 78.1 62.2 °C/W
RθJC(bottom) Junction-to-case (bottom) thermal resistance n/a n/a °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.6 Electrical Characteristics

At VS = 2.5 V to 5.5 V, RL = 100 kΩ connected to VS / 2, VOUT = VS / 2 (unless otherwise noted).
PARAMETER TEST CONDITIONS TA (1) MIN TYP MAX UNIT
VOS Input offset voltage VS = 5 V, VCM = (V–) + 0.8 V 25°C 1 5 mV
Full range 6
ΔVOS/ΔT Offset voltage drift over temperature Full range 4 µV/°C
PSRR Offset voltage drift vs power supply VS = 2.5 V to 5.5 V, VCM < (V+) – 1.7 V 25°C 60 175 µV/V
Full range 300
Channel separation dc 25°C 0.2 µV/V
f = 1 kHz 25°C 134 dB
VCM Input common-mode voltage range 25°C (V–) – 0.2 (V+) + 0.2 V
CMRR Input common-mode rejection ratio (V–) – 0.2 V < VCM < (V+) – 1.7 V 25°C 70 82 dB
Full range 66
VS = 5.5 V, (V–) – 0.2 V < VCM < (V+) + 0.2 V 25°C 60 71
VS = 5.5 V, (V–) < VCM < (V+) Full range 56
IB Input bias current 25°C ±0.5 ±10 pA
IOS Input offset current 25°C ±0.5 ±10 pA
ZI Input impedance Differential 25°C 1013|| 3 Ω || pF
Common-mode 1013|| 3
Input voltage noise VCM < (V+) – 1.7 V, f = 0.1 Hz to 10 Hz 25°C 10 µVPP
Vn Input voltage noise density VCM < (V+) – 1.7 V, f = 1 kHz 25°C 35 nV/√Hz
In Input current noise density VCM < (V+) – 1.7 V, f = 1 kHz 25°C 4 fA/√Hz
AOL Open-loop voltage gain VS = 5 V, RL = 100 kΩ,
0.025 V < VO < 4.975 V
25°C 94 108 dB
Full range 90
VS = 5V, RL = 5 kΩ,
0.125 V < VO < 4.875 V
25°C 90 98
Full range 88
Voltage output swing from rail RL = 100 kΩ, AOL > 94 dB 25°C 18 25 mV
Full range 25
RL = 5 kΩ, AOL > 90 dB 25°C 100 125 mV
Full range 125
ISC Output short-circuit current 25°C ±10 mA
CLOAD Capacitive load drive See the Typical Characteristics section 25°C
GBW Gain-bandwidth product CL = 100 pF 25°C 1 MHz
SR Slew rate CL = 100 pF, G = +1 25°C 0.5 V/µs
ts Settling time 0.1% CL = 100 pF, VS = 5.5 V, 2V- step, G = +1 25°C 5 µs
0.01% 7
Overload recovery time VIN × Gain > VS 25°C 1.6 µs
THD+N Total harmonic distortion plus noise CL = 100 pF, VS = 5.5 V, VO = 3 VPP,
G = +1, f = 1 kHz
25°C 0.0023%
IQ Quiescent current Per amplifier 25°C 45 65 µA
Full range 75
(1) Full range TA = –40°C to +125°C.

6.7 Typical Characteristics

At TA = 25°C, RL = 100 kΩ connected to VS / 2, VOUT = VS / 2 (unless otherwise noted).
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_open-loop_gain-phase_freq_sbos465.gif
Figure 1. Open-Loop Gain and Phase vs Frequency
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_max_output_freq_sbos465.gif
Figure 3. Maximum Output Voltage vs Frequency
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_q-ss_current_supply_sbos465.gif
Figure 5. Quiescent and Short-Circuit Current
vs Supply Voltage
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_cmmr_temp_sbos465.gif
Figure 7. Common-Mode Rejection vs Temperature
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_q-ss_current_temp_sbos465.gif
Figure 9. Quiescent and Short-Circuit Current
vs Temperature
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 histo_offset_voltage_prod_dist_sbos465.gif
Typical production distribution of packaged units.
Figure 11. Offset Voltage Production Distribution
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_ss-overshoot_load-cap_sbos465.gif
Figure 13. Small-Signal Overshoot vs Load Capacitance
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_ss-step_response_sbos465.gif
G = 1 V/V RL = 100 kΩ CL = 100 pF
Figure 15. Small-Signal Step Response
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_spectral-desnsity_freq_sbos465.gif
Figure 17. Input Current and Voltage Noise Spectral Density vs Frequency
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_pssr_cmmr_freq_sbos465.gif
Figure 2. PSRR and CMRR vs Frequency
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_channel-sep_freq_sbos465.gif
Figure 4. Channel Separation vs Frequency
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_output-swing_output-current_sbos165.gif
VS = ±2.5V
Figure 6. Output Voltage Swing vs Output Current
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_open-loop_gain-psrr_temp_sbos465.gif
Figure 8. Open-Loop Gain and PSRR vs Temperature
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_input-bias_temp_sbos465.gif
Figure 10. Input Bias (IB) Current vs Temperature
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 histo_offset_voltage_magnitude_prod_dist_sbos465.gif
Typical production distribution of packaged units.
Figure 12. Offset Voltage Drift Magnitude
Production Distribution
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_per-overshoot_load-cap_sbos465.gif
G = ±5 V/V, RFB = 100 kΩ
Figure 14. Percent Overshoot vs Load Capacitance
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_ls-step_response_sbos465.gif
G = 1 V/V RL = 100 kΩ CL = 100 pF
Figure 16. Large-Signal Step Response
OPA348-Q1 OPA2348-Q1 OPA4348-Q1 graph_thd-noise_freq_sbos465.gif
Figure 18. Total Harmonic Distortion + Noise vs Frequency