SBOS391B December   2007  – March 2016 OPA454

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: VS = ±50 V
    6. 7.6 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input Protection
      2. 9.3.2 Input Range
      3. 9.3.3 Output Range
      4. 9.3.4 Open-Loop Gain Linearity
      5. 9.3.5 Settling Time
      6. 9.3.6 ENABLE and E/D Com
      7. 9.3.7 Current Limit
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Applications Information
      1. 10.1.1 Lowering Offset Voltage and Drift
      2. 10.1.2 Increasing Output Current
      3. 10.1.3 Unity-Gain Noninverting Configuration
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
    3. 10.3 System Examples
      1. 10.3.1 Basic Noninverting Amplifier
      2. 10.3.2 Programmable Voltage Source
      3. 10.3.3 Bridge Circuit
      4. 10.3.4 High-Compliance Voltage Current Sources
      5. 10.3.5 High-Voltage Instrumentation Amplifier
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
      1. 12.1.1 Thermally-Enhanced PowerPAD Package
      2. 12.1.2 PowerPAD Layout Guidelines
    2. 12.2 Layout Example
    3. 12.3 Thermal Protection
    4. 12.4 Power Dissipation
    5. 12.5 Heatsinking
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
        1. 13.1.1.1 TINA-TI™ (Free Software Download)
        2. 13.1.1.2 TI Precision Designs
        3. 13.1.1.3 WEBENCH Filter Designer
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Community Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Voltage Supply voltage, VS = (V+) – (V–) 120 V
Signal input pin(2) (V–) – 0.3 (V+) + 0.3 V
E/D to E/D Com 5.5 V
Current Signal input pin(2) ±10 mA
Output short circuit(3) Continuous
Temperature Operating, TA –55 125 °C
Junction, TJ 150 °C
Storage, Tstg –55 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails must be current-limited to 10 mA or less.
(3) Short-circuit to ground.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
Machine model (MM) ±150
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage, VS = (V+) – (V–) 10 (±5) 100 (±50) V
TA Operating temperature –55 125 °C

7.4 Thermal Information

THERMAL METRIC(1) OPA454 UNIT
DDA (SO)
8 PINS
RθJA Junction-to-ambient thermal resistance 40.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 46 °C/W
RθJB Junction-to-board thermal resistance 20.7 °C/W
ψJT Junction-to-top characterization parameter 5.6 °C/W
ψJB Junction-to-board characterization parameter 20.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.5 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics: VS = ±50 V

At TP(1) = 25°C, RL = 4.8 kΩ to mid-supply, VCM = VOUT = mid-supply, unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage IO = 0 mA ±0.2 ±4 mV
dVOS/dT Input offset voltage vs temperature At TA = –40°C to +85°C ±1.6 ±10 µV/°C
PSRR Input offset voltage vs power supply VS = ±4 V to ±60 V, VCM = 0 V 25 100 µV/V
INPUT BIAS CURRENT
IB Input bias current At TP = 25°C ±1.4 ±100 pA
At TA = –40°C to +85°C See Typical Characteristics
IOS Input offset current ±0.2 ±100 pA
NOISE
en Input voltage noise density f = 10 Hz 300 nV/√Hz
f = 10 kHz 35 nV/√Hz
Input voltage noise f = 0.01 Hz to 10 Hz 15 µVPP
in Current noise density f = 1 kHz 40 fA/√Hz
INPUT VOLTAGE RANGE
VCM Common-mode voltage range Linear operation (V–) + 2.5 See Note (12) (V+) – 2.5 V
CMRR Common-mode rejection VS = ±50 V, –25 V ≤ VCM ≤ 25 V 100 146 dB
VS = ±50 V, –45 V ≤ VCM ≤ 45 V 100 147 dB
At TA = –40°C to +85°C,
VS = ±50 V, –25 V ≤ VCM ≤ 25 V		 80 88 dB
At TA = –40°C to +85°C,
VS = ±50 V, –45 V ≤ VCM ≤ 45 V		 72 82 dB
INPUT IMPEDANCE
Differential 1013 || 10 Ω || pF
Common-mode 1013 || 9 Ω || pF
OPEN-LOOP GAIN
AOL Open-loop
voltage gain(2)		 (V–) + 1 V < VO < (V+) – 1 V,
RL = 49 kΩ, IO = ±1 mA		 100 130 dB
At TA = –40°C to +85°C 112 dB
(V–) + 1 V < VO < (V+) – 2 V,
RL = 4.8 kΩ, IO = ±10 mA		 100 115 dB
At TA = –40°C to +85°C 106 dB
(V–) + 2 V < VO < (V+) – 3 V,
RL = 1880 Ω, IO = ±25 mA		 80 102 dB
At TA = –40°C to +85°C 84 dB
FREQUENCY RESPONSE(3)
GBW Gain-bandwidth product Small-signal 2.5 MHz
SR Slew rate G = ±1, VO = 80-V step,
RL = 3.27 kΩ		 13 V/µs
Full-power bandwidth(4) 35 kHz
tS Settling time(5) To ±0.1%, G = ±1, VO = 20-V step 3 µs
To ±0.01%, G = ±5 or ±10,
VO = 80-V step		 10 µs
THD+N Total harmonic distortion + noise(6) VS = +40.6 V/–39.6 V, G = ±1,
f = 1 kHz, VO = 77.2 VPP		 0.0008%
OUTPUT
VO Voltage output swing from rail(7) RL = 49 kΩ, AOL ≥ 100 dB,
IO = 1 mA		 (V–) + 1 (V+) – 1 V
RL = 4.8 kΩ, AOL ≥ 100 dB,
IO = 10 mA		 (V–) + 1 (V+) – 2 V
RL = 1880 Ω, AOL ≥ 80 dB,
IO = 26 mA		 (V–) + 2 (V+) – 3 V
Continuous current output, DC Depends on circuit conditions See Figure 5
IO Maximum peak current output, current limit(2) +120/–150 mA
At TA = –40°C to +85°C +140/–170 mA
CLOAD Capacitive load drive(3) 200 pF
RO Open-loop output impedance See Figure 4 Ω
Output disabled Output capacitance 18 pF
Feedthrough capacitance(8) 150 fF
STATUS FLAG PIN (Referenced to E/D Com)
Status Flag delay Enable → Disable 6 µs
Disable → Enable 4 µs
Overcurrent delay(10) 15 µs
Overcurrent recovery delay(10) 10 µs
TJ Junction temperature Alarm (Status Flag high) 150 °C
Return to normal operation
(Status Flag low)		 130 °C
Output voltage(3) Normal operation E/D Com + 2 V
RL = 100 Ω during thermal overdrive, alarm (V+) – 2.5 V
E/D (ENABLE/DISABLE) PIN
E/D pin, referenced to E/D Com pin(11)(9)
VSD High (output enabled) Pin open or forced high E/D Com + 2.5 E/D Com + 5 V
Low (output disabled) Pin forced low E/D Com E/D Com + 0.65 V
Output disable time 4 µs
Output enable time 3 µs
E/D COM PIN
Voltage range (V–) (V+) – 5 V
POWER SUPPLY
VS Specified range ±50 V
Operating voltage range ±5 ±50 V
IQ Quiescent current IO = 0 mA 3.2 4 mA
Quiescent current in Shutdown mode IO = 0 mA, VE/D = 0.65 V 150 210 µA
TEMPERATURE RANGE
TA Specified range –40 85 °C
Operating range –55 125 °C
(1) TP is the temperature of the leadframe die pad (exposed thermal pad) of the PowerPAD package.
(2) Measured using low-frequency (<10 Hz) ±49-V square wave. See typical characteristic curve, Current Limit vs Temperature (Figure 23).
(3) See Typical Characteristics curves.
(4) See typical characteristic curve, Maximum Output Voltage vs Frequency (Figure 11).
(5) See the Feature Description section, Settling Time.
(6) Supplies reduced to allow closer swing to rails due to test equipment limitations. See typical characteristic curves Total Harmonic Distortion + Noise vs Frequency (Figure 29 and Figure 30) for additional power levels.
(7) See typical characteristic curve, Output Voltage Swing vs Output Current (Figure 10).
(8) Measured using Figure 56.
(9) High enables the outputs.
(10) See Typical Characteristics curves for current limit behavior.
(11) See typical characteristic curve, IENABLE vs VENABLE (Figure 45).
(12) Typical range is (V–) + 1.5 V to (V+) – 1.5 V.

7.6 Typical Characteristics

At TP = 25°C, VS = ±50 V, and RL = 4.8 kΩ connected to GND, unless otherwise noted.
OPA454 tc_g_ph-frq_bos391.gif
Figure 1. Open-Loop Gain and Phase vs Frequency
OPA454 tc_ugbw-tmp_bos391.gif
Figure 3. Unity-Gain Bandwidth vs Temperature
OPA454 tc_g-pk_load_bos391.gif
Figure 5. Open-Loop Gain vs Peak-Load Current
OPA454 tc_cmrr-frq_bos391.gif
Figure 7. Common-Mode Rejection Ratio vs Frequency
OPA454 tc_psrr-fqcy_bos391.gif
Figure 9. Power-Supply Rejection Ratio vs Frequency
OPA454 tc_max_vo-frq_bos391.gif
Figure 11. Maximum Output Voltage vs Frequency
OPA454 tc_histo_voff_drift_bos391.gif
Figure 13. Offset Voltage Drift Production Distribution
OPA454 tc_histo_att_vos_bos391.gif
Figure 15. DDA Package, Solder-Attached, VOS Shift
OPA454 tc_histo_iq_bos391.gif
Figure 17. Quiescent Current Production Distribution
OPA454 tc_iq-tmp_bos391.gif
Figure 19. Quiescent Current vs Temperature
OPA454 tc_bias-tmp_bos391.gif
Figure 21. Input Bias Current vs Temperature
OPA454 tc_ilimit-tmp_bos391.gif
Figure 23. Current Limit vs Temperature
OPA454 tc_max_pwr-tmp_bos391.gif
Figure 25. Maximum Power Dissipation vs
Temperature With Minimum Attach Area
OPA454 tc_in_spec_bos391.gif
Figure 27. Input Voltage Noise Spectral Density
OPA454 tc_thdn-frq_g10_bos391.gif
Figure 29. Total Harmonic Distortion + Noise vs Frequency
OPA454 tc_step_60c_bos391.gif
Figure 31. Large-Signal Step Response
OPA454 tc_lg_step_bos391.gif
Figure 33. Large-Signal Step Response
OPA454 tc_step_resp_bos391.gif
Figure 35. Step Response
OPA454 tc_pk-cload_p2_bos391.gif
G = +2 RF = 10 kΩ VCM = 0 V
Figure 37. Gain Peaking vs CLOAD
OPA454 tc_g_p2-frq_bos391.gif
See Application section Unity-Gain Noninverting Configuration.
Figure 39. Gain of +2 vs Frequency
OPA454 tc_settle_lo_bos391.gif
See the Settling Time section. The grid for voltage at V1 and V2 is scaled 20 mV or 0.1% per division.
20-V Step Gain = 1 RF = 10 kΩ
Figure 41. Settling Time, Negative Step
OPA454 tc_disable_tek07_bos391.gif
Figure 43. Disable Response Time
OPA454 tc_ienb-venb_bos391.gif
Figure 45. IENABLE vs VENABLE
OPA454 tc_ilimit_125c_bos391.gif
The OPA454 was connected to sufficient heatsinking to prevent thermal shutdown.
TP = 125°C
Figure 47. ILIMIT Showing Flag Delay ()
OPA454 tc_ilimit_55c_bos391.gif
The OPA454 was connected to sufficient heatsinking to prevent thermal shutdown.
TP = –55°C
Figure 49. ILIMIT Showing Flag Delay
OPA454 tc_sink_rem_bos391.gif
Figure 51. Remove Load (25-mA Sink Response)
OPA454 tc_src_rem_bos391.gif
Figure 53. Remove Load (25-mA Source Response)
OPA454 tc_pwr_off_bos391.gif
Figure 55. Power Off
OPA454 tc_ph_cmv_bos391.gif
Figure 2. Phase Margin vs Temperature
OPA454 tc_oloop_imp-frq_bos391.gif
Figure 4. Open-Loop Output Impedance vs Frequency
OPA454 tc_g-tmp_bos391.gif
Figure 6. Open-Loop Gain vs Temperature
OPA454 tc_psr_cmr-tmp_bos391.gif
Figure 8. Power-Supply and Common-Mode Rejection Ratio vs Temperature
OPA454 tc_vout-iout_bos391.gif
Figure 10. Output Voltage Swing vs Output Current
(Measured When Status Flag Transitions From
Low To High)
OPA454 tc_histo_voff_bos391.gif
Figure 12. DDA Package Offset Voltage
Production Distribution
OPA454 tc_histo_att_vos_tc_bos391.gif
Figure 14. Solder-Attached, VOS TC Shift
OPA454 tc_vo_warmup_bos391.gif
Figure 16. Offset Voltage Warmup
(60 Devices)
OPA454 tc_iq-vs_bos391.gif
Figure 18. Quiescent Current vs Supply Voltage
OPA454 tc_curr-tmp_bos391.gif
Figure 20. Shutdown Current vs Temperature
OPA454 tc_bias-vcm_bos391.gif
Figure 22. Input Bias Current vs Common-Mode Voltage
OPA454 tc_vflag-tmp_bos391.gif
See Figure 72 in the System Examples section.
Figure 24. Status Flag Voltage vs Temperature
(E/D Com Connected To V–)
OPA454 tc_slew-tmp_bos391.gif
Figure 26. Slew Rate vs Temperature
OPA454 tc_in_noise_bos391.gif
Figure 28. 0.01-Hz to 10-Hz Input Voltage Noise
OPA454 tc_thdn-frq_g1_bos391.gif
Figure 30. Total Harmonic Distortion + Noise vs Frequency
OPA454 tc_step_105c_bos391.gif
Figure 32. Large-Signal Step Response
OPA454 tc_sm_step_bos391.gif
Figure 34. Small-Signal Step Response
OPA454 tc_pk-cload_p1_bos391.gif
See Application section, Unity-Gain Noninverting Configuration.
G = +1 VCM = 0 V
Figure 36. Gain Peaking vs CLOAD
OPA454 tc_g_p1-frq_bos391.gif
See Application section Unity-Gain Noninverting Configuration.
Figure 38. Gain of +1 vs Frequency
OPA454 tc_settle_hi_bos391.gif
See the Settling Time section. The grid for voltage at V1 and V2 is scaled 20 mV or 0.1% per division.
20-V Step Gain = 1 RF = 10 kΩ
Figure 40. Settling Time, Positive Step
OPA454 tc_enable01_tek06_bos391.gif
Figure 42. Enable Response Time
OPA454 tc_enable02_tek14_bos391.gif
Figure 44. Enable Response
OPA454 tc_endis_thresh-tmp_bos391.gif
Figure 46. Enable/Disable Threshold vs Temperature
OPA454 tc_ilimit_25c_bos391.gif
The OPA454 was connected to sufficient heatsinking to prevent thermal shutdown.
TP = 25°C
Figure 48. ILIMIT Showing Flag Delay
OPA454 tc_sink_app_bos391.gif
Figure 50. Apply Load (25-mA Sink Response)
OPA454 tc_src_app_bos391.gif
Figure 52. Apply Load (25-mA Source Response)
OPA454 tc_pwr_on_bos391.gif
Figure 54. Power On