SBOS342C December   2008  – November 2015 OPA659

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Related Operational Amplifier Products
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Feature Description
      1. 8.2.1 Input and ESD Protection
    3. 8.3 Device Functional Modes
      1. 8.3.1 Split-Supply Operation (±3.5 V to ±6.5 V)
      2. 8.3.2 Single-Supply Operation (7 V to 13 V)
  9. 9 Application Information
    1. 9.1 Application Information
      1. 9.1.1 Wideband, Noninverting Operation
      2. 9.1.2 Wideband, Inverting Gain Operation
      3. 9.1.3 Operating Suggestions
        1. 9.1.3.1 Setting Resistor Values To Minimize Noise
        2. 9.1.3.2 Frequency Response Control
        3. 9.1.3.3 Driving Capacitive Loads
        4. 9.1.3.4 Distortion Performance
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Pad Information
    4. 11.4 Schematic and PCB Layout
    5. 11.5 Evaluation Module
      1. 11.5.1 Bill of Materials
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • High Bandwidth: 650 MHz (G = 1 V/V)
  • High Slew Rate: 2550 V/μs (4-V Step)
  • Excellent THD: –78 dBc at 10 MHz
  • Low Input Voltage Noise: 8.9 nV/√Hz
  • Fast Overdrive Recovery: 8 ns
  • Fast Settling time (1% 4-V Step): 8 ns
  • Low Input Offset Voltage: ±1 mV
  • Low Input Bias Current: ±10 pA
  • High Output Current: 70 mA

2 Applications

  • High-Impedance Data Acquisition Input Amplifiers
  • High-Impedance Oscilloscope Input Amplifiers
  • Wideband Photodiode Transimpedance Amplifiers
  • Wafer Scanning Equipment
  • Optical Time-Domain Reflectometry (OTDR)
  • High-Speed Time-of-Flight (TOF) Sensing

3 Description

The OPA659 combines a very wideband, unity-gain stable, voltage-feedback operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection.

The wide 650-MHz unity-gain bandwidth is complemented by a very high 2550-V/μs slew rate.

The high input impedance and low bias current provided by the JFET input are supported by the low 8.9-nV/√Hz input voltage noise to achieve a very low integrated noise in wideband photodiode transimpedance applications.

Broad transimpedance bandwidths are possible with the high 350-MHz gain bandwidth product of this device.

Where lower speed with lower quiescent current is required, consider the OPA656. Where unity-gain stability is not required, consider the OPA657.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
OPA659 SOT-23 (5) 2.90 mm × 1.60 mm
SON (8) 3.00 mm × 3.00 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Typical Application

OPA659 fp_bos342.gif

Transimpedance Gain vs Frequency

OPA659 fp_2_bos342.gif