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  • OPT101 Monolithic Photodiode and Single-Supply Transimpedance Amplifier

    • SBBS002B January   1994  – June 2015 OPT101

      PRODUCTION DATA.  

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  • OPT101 Monolithic Photodiode and Single-Supply Transimpedance Amplifier
  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Electrical Characteristics: Photodiode
    7. 6.7 Electrical Characteristics: Op Amp
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Light Source Positioning and Uniformity
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Dark Performance
      2. 8.3.2 Feedback Network and Dynamic Response
        1. 8.3.2.1 Changing Responsivity
      3. 8.3.3 Noise Performance
      4. 8.3.4 Linearity Performance
      5. 8.3.5 Capacitive Load Drive
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Color and Reflective Wavelength Tester
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Three-Wire Remote Light Measurement
      3. 9.2.3 Differential Light Measurement
      4. 9.2.4 LED Output Regulation Circuit
    3. 9.3 Dos and Don'ts
  10. 10Power-Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Community Resources
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Moisture Sensitivity and Soldering
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
  14. IMPORTANT NOTICE

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DATA SHEET

OPT101 Monolithic Photodiode and Single-Supply Transimpedance Amplifier

1 Features

  • Single Supply: 2.7 to 36 V
  • Photodiode Size: 0.090 inch × 0.090 inch
    (2.29 mm × 2.29 mm)
  • Internal 1-MΩ Feedback Resistor
  • High Responsivity: 0.45 A/W (650 nm)
  • Bandwidth: 14 kHz at RF = 1 MΩ
  • Low Quiescent Current: 120 μA
  • Packages: Clear Plastic 8-pin PDIP and J-Lead SOP

2 Applications

  • Medical Instrumentation
  • Laboratory Instrumentation
  • Position and Proximity Sensors
  • Photographic Analyzers
  • Barcode Scanners
  • Smoke Detectors
  • Currency Changers

3 Description

The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. The integrated combination of photodiode and transimpedance amplifier on a single chip eliminates the problems commonly encountered in discrete designs, such as leakage current errors, noise pick-up, and gain peaking as a result of stray capacitance. Output voltage increases linearly with light intensity. The amplifier is designed for single or dual power-supply operation.

The 0.09 inch × 0.09 inch (2.29 mm × 2.29 mm) photodiode operates in the photoconductive mode for excellent linearity and low dark current.

The OPT101 operates from 2.7 V to 36 V supplies and quiescent current is only 120 μA. This device is available in clear plastic 8-pin PDIP, and J-lead SOP for surface mounting. The temperature range is 0°C to 70°C.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
OPT101 PDIP (8) 9.53 mm × 6.52 mm
SOP (8) 9.52 mm × 6.52 mm
  1. For all available packages, see the package option addendum at the end of the data sheet.

Block Diagram

OPT101 fpd_sbbs002.gif

Spectral Responsivity

OPT101 front_page_plot_sbbs002.gif

4 Revision History

Changes from A Revision (October 2003) to B Revision

  • Added Pin Functions, ESD Ratings, Recommended Operating Conditions, and Thermal information tables, and Parameter Measurement Information, Detailed Description, Application and Implementation, Power-Supply Recommendations, Layout, and Device and Documentation Support sections; moved existing sectionsGo
  • Deleted W version of device from Tolerance parameter of Electrical Characteristics table; W version now obsolete Go
  • Changed Application Information sectionGo

5 Pin Configuration and Functions

DTL and NTC Packages
8-pin SOP and 8-pin PDIP
Top View
OPT101 po_sbbs002.gif
1. Photodiode location.

Pin Functions

PIN I/O DESCRIPTION
NO. NAME
1 VS Power Power supply of device. Apply 2.7 V to 36 V relative to –V pin.
2 –In Input Negative input of op amp and the cathode of the photodiode. Either do not connect, or apply additional op amp feedback.
3 –V Power Most negative power supply. Connect to ground or a negative voltage that meets the recommended operating conditions.
4 1MΩ Feedback Input Connection to internal feedback network. Typically connect to Output, pin 5.
5 Output Output Output of device.
6 NC — Do not connect
7 NC — Do not connect
8 Common Input Anode of the photodiode. Typically, connect to ground.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Supply voltage (VS to Common pin or –V pin) 0 36 V
Output short-circuit (to ground) Continuous
Temperature Operating –25 85 °C
Junction 85 °C
Storage, Tstg –25 85 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
POWER SUPPLY
Operating voltage 2.7 36 V
TEMPERATURE
Specified 0 70 °C
Operating 0 70 °C

6.4 Thermal Information

THERMAL METRIC(1) OPT101 UNIT
DTL (SOP) NTC (PDIP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 138.6 128.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 96.4 113.1 °C/W
RθJB Junction-to-board thermal resistance 126.6 107.0 °C/W
ψJT Junction-to-top characterization parameter 17.8 24.2 °C/W
ψJB Junction-to-board characterization parameter 118.8 105.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

At TA = 25°C, VS = 2.7 V to 36 V, λ = 650 nm, internal 1-MΩ feedback resistor, and RL = 10 kΩ (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
RESPONSIVITY
Photodiode current 0.45 A/W
Voltage output 0.45 V/µW
Voltage output vs temperature 100 ppm/°C
Unit-to-unit variation ±5%
Nonlinearity(1) Full-scale (FS) output = 24 V ±0.01 % of FS
Photodiode area 0.090 in × 0.090 in 0.008 in2
2.29 mm × 2.29 mm 5.2 mm2
DARK ERRORS, RTO(2)
Offset voltage, output 5 7.5 10 mV
Offset voltage vs temperature ±10 µV/°C
Offset voltage vs power supply VS = 2.7 V to 36 V 10 100 µV/V
Voltage noise, dark fB = 0.1 Hz to 20 kHz, VS = 15 V, VPIN3 = –15 V 300 µVrms
TRANSIMPEDANCE GAIN
Resistor 1 MΩ
Tolerance ±0.5% ±2%
Tolerance vs temperature ±50 ppm/°C
FREQUENCY RESPONSE
Bandwidth VOUT = 10 VPP 14 kHz
Rise and fall time 10% to 90%, VOUT = 10-V step 28 µs
Settling time to 0.05%, VOUT = 10-V step 160 µs
to 0.1%, VOUT = 10-V step 80 µs
to 1%, VOUT = 10-V step 70 µs
Overload recovery 100%, return to linear operation 50 µs
OUTPUT
Voltage output, high (VS) – 1.3 (VS) – 1.15 V
Capacitive load, stable operation 10 nF
Short-circuit current VS = 36 V 15 mA
POWER SUPPLY
Quiescent current Dark, VPIN3 = 0 V 120 µA
RL = ∞, VOUT = 10 V 220 µA
(1) Deviation in percent of full scale from best-fit straight line.
(2) Referred to output. Includes all error sources.

6.6 Electrical Characteristics: Photodiode

At TA = 25°C and VS = 2.7 V to 36 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Photodiode area 0.090 in × 0.090 in 0.008 in2
2.29 mm × 2.29 mm 5.2 mm2
Current responsivity λ = 650 nm 0.45 A/W
865 (µA/W)/cm2
Dark current VDIODE = 7.5 mV 2.5 pA
Dark current vs temperature VDIODE = 7.5 mV Doubles every 7°C —
Capacitance 1200 pF

6.7 Electrical Characteristics: Op Amp(1)

At TA = 25°C, VS = 2.7 V to 36 V, λ = 650 nm, internal 1-MΩ feedback resistor, and RL = 10 kΩ (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT
Offset voltage ±0.5 mV
vs temperature ±2.5 µV/°C
vs power supply 10 µV/V
Input bias current (–) input 165 pA
vs temperature (–) input Doubles every 10°C —
Input impedance Differential 400 || 5 MΩ || pF
Common-mode 250 || 35 GΩ || pF
Common-mode input voltage range Linear operation 0 to (VS – 1) V
Common-mode rejection 90 dB
OPEN-LOOP GAIN
Open-loop voltage gain 90 dB
FREQUENCY RESPONSE
Gain bandwidth product(2) 2 MHz
Slew rate 1 V/µs
Settling time 0.05% 8.0 µs
0.1% 7.7 µs
1% 5.8 µs
OUTPUT
Voltage output, high (VS) – 1.3 (VS) – 1.15 V
Short-circuit current VS = 36 V 15 mA
POWER SUPPLY
Quiescent current Dark, VPIN3 = 0 V 120 µA
RL = ∞, VOUT = 10 V 220 µA
(1) Op amp specifications provided for information and comparison only.
(2) Stable gains ≥ 10 V/V.

6.8 Typical Characteristics

At TA = 25°C, VS = 2.7 V to 36 V, λ = 650 nm, internal 1-MΩ feedback resistor, and RL = 10 kΩ (unless otherwise noted)
OPT101 tc_norm_spectral_resp_sbbs002.gif
Figure 1. Normalized Spectral Responsivity
OPT101 tc_voltage_resp-irradiance_sbbs002.gif
Figure 3. Voltage Responsivity vs Irradiance
OPT101 tc_resp-incident_angle_sbbs002.gif
Figure 5. Response vs Incident Angle
OPT101 tc_iq-temp_sbbs002.gif
Figure 7. Quiescent Current vs Temperature
OPT101 tc_short-circuit-vs_sbbs002.gif
Figure 9. Short-Circuit Current vs VS
OPT101 tc_output_noise_voltage-bw_sbbs002.gif
VS = 15 V, VOUT – VPIN3 = 15 V
Figure 11. Output Noise Voltage vs Measurement Bandwidth
OPT101 tc_small-signal-resp_sbbs002.gif
Figure 13. Small-Signal Response
OPT101 tc_small-signal-resp_0v_sbbs002.gif
CLOAD = 10,000 pF, pin 3 = 0 V
Figure 15. Small-Signal Response
OPT101 tc_voltage_resp-radiant_pwr_sbbs002.gif
Figure 2. Voltage Responsivity vs Radiant Power
OPT101 tc_voltage_resp-freq_sbbs002.gif
Figure 4. Voltage Responsivity vs Frequency
OPT101 tc_dark_vout-temp_sbbs002.gif
Figure 6. Dark VOUT vs Temperature
OPT101 tc_iq-vout-vpin3_sbbs002.gif
Figure 8. Quiescent Current vs (VOUT – VPIN3)
OPT101 tc_ibias-idark-temp_sbbs002.gif
Figure 10. (IBIAS – IDARK) vs Temperature
OPT101 tc_noise_effective_power-bw_sbbs002.gif
VS = 15 V, VOUT – VPIN3 = 15 V
Figure 12. Noise Effective Power vs Measurement Bandwidth
OPT101 tc_large-signal-resp_sbbs002.gif
Figure 14. Large-Signal Response
OPT101 tc_small-signal-resp_-15v_sbbs002.gif
CLOAD = 10,000 pF, Pin 3 = –15 V
Figure 16. Small-Signal Response

7 Parameter Measurement Information

7.1 Light Source Positioning and Uniformity

The OPT101 is tested with a light source that uniformly illuminates the full area of the integrated circuit, including the op amp. Although the silicon of integrated circuit (IC) amplifiers is light-sensitive to some degree, the OPT101 op amp circuitry is designed to minimize this effect. Sensitive junctions are shielded with metal, and the photodiode area is very large relative to the op amp input circuitry.

If the light source is focused to a small area, be sure that it is properly aimed to fall on the photodiode. A narrowly-focused beam falling only on the photodiode provides improved settling times compared to a source that uniformly illuminates the full area of the die. If a narrowly-focused light source misses the photodiode area and falls only on the op amp circuitry, the OPT101 does not perform properly. The large 0.09-in × 0.09-in (2.29 mm × 2.29 mm) photodiode area allows easy positioning of narrowly-focused light sources. The photodiode area is easily visible because the area appears very dark compared to the surrounding active circuitry.

The incident angle of the light source also effects the apparent sensitivity in uniform irradiance. For small incident angles, the loss in sensitivity is simply due to the smaller effective light gathering area of the photodiode (proportional to the cosine of the angle). At a greater incident angle, light is diffracted and scattered by the package. These effects are shown in Figure 5.

 
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