The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. The integrated combination of photodiode and transimpedance amplifier on a single chip eliminates the problems commonly encountered in discrete designs, such as leakage current errors, noise pick-up, and gain peaking as a result of stray capacitance. Output voltage increases linearly with light intensity. The amplifier is designed for single or dual power-supply operation.
The 0.09 inch × 0.09 inch (2.29 mm × 2.29 mm) photodiode operates in the photoconductive mode for excellent linearity and low dark current.
The OPT101 operates from 2.7 V to 36 V supplies and quiescent current is only 120 μA. This device is available in clear plastic 8-pin PDIP, and J-lead SOP for surface mounting. The temperature range is 0°C to 70°C.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
OPT101 | PDIP (8) | 9.53 mm × 6.52 mm |
SOP (8) | 9.52 mm × 6.52 mm |
Changes from A Revision (October 2003) to B Revision
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NO. | NAME | ||
1 | VS | Power | Power supply of device. Apply 2.7 V to 36 V relative to –V pin. |
2 | –In | Input | Negative input of op amp and the cathode of the photodiode. Either do not connect, or apply additional op amp feedback. |
3 | –V | Power | Most negative power supply. Connect to ground or a negative voltage that meets the recommended operating conditions. |
4 | 1MΩ Feedback | Input | Connection to internal feedback network. Typically connect to Output, pin 5. |
5 | Output | Output | Output of device. |
6 | NC | — | Do not connect |
7 | NC | — | Do not connect |
8 | Common | Input | Anode of the photodiode. Typically, connect to ground. |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage (VS to Common pin or –V pin) | 0 | 36 | V | |
Output short-circuit (to ground) | Continuous | |||
Temperature | Operating | –25 | 85 | °C |
Junction | 85 | °C | ||
Storage, Tstg | –25 | 85 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
POWER SUPPLY | |||||
Operating voltage | 2.7 | 36 | V | ||
TEMPERATURE | |||||
Specified | 0 | 70 | °C | ||
Operating | 0 | 70 | °C |
THERMAL METRIC(1) | OPT101 | UNIT | ||
---|---|---|---|---|
DTL (SOP) | NTC (PDIP) | |||
8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 138.6 | 128.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 96.4 | 113.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 126.6 | 107.0 | °C/W |
ψJT | Junction-to-top characterization parameter | 17.8 | 24.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 118.8 | 105.9 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
RESPONSIVITY | ||||||
Photodiode current | 0.45 | A/W | ||||
Voltage output | 0.45 | V/µW | ||||
Voltage output vs temperature | 100 | ppm/°C | ||||
Unit-to-unit variation | ±5% | |||||
Nonlinearity(1) | Full-scale (FS) output = 24 V | ±0.01 | % of FS | |||
Photodiode area | 0.090 in × 0.090 in | 0.008 | in2 | |||
2.29 mm × 2.29 mm | 5.2 | mm2 | ||||
DARK ERRORS, RTO(2) | ||||||
Offset voltage, output | 5 | 7.5 | 10 | mV | ||
Offset voltage vs temperature | ±10 | µV/°C | ||||
Offset voltage vs power supply | VS = 2.7 V to 36 V | 10 | 100 | µV/V | ||
Voltage noise, dark | fB = 0.1 Hz to 20 kHz, VS = 15 V, VPIN3 = –15 V | 300 | µVrms | |||
TRANSIMPEDANCE GAIN | ||||||
Resistor | 1 | MΩ | ||||
Tolerance | ±0.5% | ±2% | ||||
Tolerance vs temperature | ±50 | ppm/°C | ||||
FREQUENCY RESPONSE | ||||||
Bandwidth | VOUT = 10 VPP | 14 | kHz | |||
Rise and fall time | 10% to 90%, VOUT = 10-V step | 28 | µs | |||
Settling time | to 0.05%, VOUT = 10-V step | 160 | µs | |||
to 0.1%, VOUT = 10-V step | 80 | µs | ||||
to 1%, VOUT = 10-V step | 70 | µs | ||||
Overload recovery | 100%, return to linear operation | 50 | µs | |||
OUTPUT | ||||||
Voltage output, high | (VS) – 1.3 | (VS) – 1.15 | V | |||
Capacitive load, stable operation | 10 | nF | ||||
Short-circuit current | VS = 36 V | 15 | mA | |||
POWER SUPPLY | ||||||
Quiescent current | Dark, VPIN3 = 0 V | 120 | µA | |||
RL = ∞, VOUT = 10 V | 220 | µA |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
Photodiode area | 0.090 in × 0.090 in | 0.008 | in2 | |||
2.29 mm × 2.29 mm | 5.2 | mm2 | ||||
Current responsivity | λ = 650 nm | 0.45 | A/W | |||
865 | (µA/W)/cm2 | |||||
Dark current | VDIODE = 7.5 mV | 2.5 | pA | |||
Dark current vs temperature | VDIODE = 7.5 mV | Doubles every 7°C | — | |||
Capacitance | 1200 | pF |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
INPUT | ||||||
Offset voltage | ±0.5 | mV | ||||
vs temperature | ±2.5 | µV/°C | ||||
vs power supply | 10 | µV/V | ||||
Input bias current | (–) input | 165 | pA | |||
vs temperature | (–) input | Doubles every 10°C | — | |||
Input impedance | Differential | 400 || 5 | MΩ || pF | |||
Common-mode | 250 || 35 | GΩ || pF | ||||
Common-mode input voltage range | Linear operation | 0 to (VS – 1) | V | |||
Common-mode rejection | 90 | dB | ||||
OPEN-LOOP GAIN | ||||||
Open-loop voltage gain | 90 | dB | ||||
FREQUENCY RESPONSE | ||||||
Gain bandwidth product(2) | 2 | MHz | ||||
Slew rate | 1 | V/µs | ||||
Settling time | 0.05% | 8.0 | µs | |||
0.1% | 7.7 | µs | ||||
1% | 5.8 | µs | ||||
OUTPUT | ||||||
Voltage output, high | (VS) – 1.3 | (VS) – 1.15 | V | |||
Short-circuit current | VS = 36 V | 15 | mA | |||
POWER SUPPLY | ||||||
Quiescent current | Dark, VPIN3 = 0 V | 120 | µA | |||
RL = ∞, VOUT = 10 V | 220 | µA |
VS = 15 V, VOUT – VPIN3 = 15 V |
CLOAD = 10,000 pF, pin 3 = 0 V |
VS = 15 V, VOUT – VPIN3 = 15 V |
CLOAD = 10,000 pF, Pin 3 = –15 V |
The OPT101 is tested with a light source that uniformly illuminates the full area of the integrated circuit, including the op amp. Although the silicon of integrated circuit (IC) amplifiers is light-sensitive to some degree, the OPT101 op amp circuitry is designed to minimize this effect. Sensitive junctions are shielded with metal, and the photodiode area is very large relative to the op amp input circuitry.
If the light source is focused to a small area, be sure that it is properly aimed to fall on the photodiode. A narrowly-focused beam falling only on the photodiode provides improved settling times compared to a source that uniformly illuminates the full area of the die. If a narrowly-focused light source misses the photodiode area and falls only on the op amp circuitry, the OPT101 does not perform properly. The large 0.09-in × 0.09-in (2.29 mm × 2.29 mm) photodiode area allows easy positioning of narrowly-focused light sources. The photodiode area is easily visible because the area appears very dark compared to the surrounding active circuitry.
The incident angle of the light source also effects the apparent sensitivity in uniform irradiance. For small incident angles, the loss in sensitivity is simply due to the smaller effective light gathering area of the photodiode (proportional to the cosine of the angle). At a greater incident angle, light is diffracted and scattered by the package. These effects are shown in Figure 5.