JAJSDR1 September   2017 REF2125

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Solder Heat Shift
    2. 7.2 Long-Term Stability
    3. 7.3 Thermal Hysteresis
    4. 7.4 Power Dissipation
    5. 7.5 Noise Performance
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Supply Voltage
      2. 8.3.2 Low Temperature Drift
      3. 8.3.3 Load Current
      4. 8.3.4 Clean Start Feature
    4. 8.4 Device Functional Modes
      1. 8.4.1 EN Pin
      2. 8.4.2 Negative Reference Voltage
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Basic Voltage Reference Connection
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input and Output Capacitors
        2. 9.2.2.2 VIN Slew Rate Considerations
        3. 9.2.2.3 Shutdown/Enable Feature
      3. 9.2.3 Application Curves
  10. 10Power-Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントのサポート
      1. 12.1.1 関連資料
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Input voltage IN VREF + 0.05 13 V
EN –0.3 IN + 0.3
Output voltage VREF –0.3 5.5 V
Output short circuit current 20 mA
Temperature Operating, TA –55 150 °C
Storage Tstg –65 170
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
IN Supply input voltage (IL = 0 mA, TA = 25°C) VREF + VDO (1) 12 V
EN Enable voltage 0 IN V
IL Output current –10 10 mA
TA Operating temperature –40 25 125 °C
(1) Dropout voltage.

6.4 Thermal Information

THERMAL METRIC(1) REF2125 UNIT
DBV (SOT-23)
6 PINS
RθJA Junction-to-ambient thermal resistance 185 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 156 °C/W
RθJB Junction-to-board thermal resistance 29.6 °C/W
ψJT Junction-to-top characterization parameter 33.8 °C/W
ψJB Junction-to-board characterization parameter 29.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

At TA = 25°C unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ACCURACY AND DRIFT
Output voltage accuracy –40°C ≤ TA ≤ 125°C –0.05% 0.05%
Output voltage temperature coefficient(1) 2.5 6 ppm/°C
LINE AND LOAD REGULATION
ΔV(OΔVIN) Line regulation VIN = 2.55 V to 12 V , TA = 25°C 2 ppm/V
VIN = VREF + VDO(5) to 12 V, −40°C ≤ TA ≤ 125°C 15
ΔV(OΔIL) Load regulation IL = 0 mA to 10 mA, VIN = 3 V, TA = 25°C Sourcing 20 ppm/mA
IL = 0 mA to 10 mA, VIN = 3 V, −40°C ≤ TA ≤ 125°C Sourcing 30
IL = 0 mA to –10 mA, VIN = VREF+ VDO(5), TA = 25°C Sinking 40
IL = 0 mA to –10 mA, VIN = VREF+ VDO(5), −40°C ≤ TA ≤ 125°C Sinking 70
ISC Short-circuit current(6) VREF = 0, CCS = No connect, TA = 25°C 18 mA
RCS = 500kΩ, TA = 25°C 7 mA
CCS = GND, TA = 25°C 0.5 mA
NOISE
en p-p Output voltage noise(2) ƒ = 0.1 Hz to 10 Hz 5 μV p-p/V
ƒ = 10 Hz to 10 kHz 24 μV rms
en Output voltage noise density ƒ = 1 kHz 0.25 ppm/√Hz
HYSTERESIS AND LONG TERM STABILITY
Long-term stability(3) 1000 hours 30 ppm
Output voltage hysteresis(4) TA = 25°C to −40°C to 125°C to 25°C, Cycle 1 30 ppm
TA = 25°C to −40°C to 125°C to 25°C, Cycle 2 10
TURNON
tON Turnon time 0.1% of output voltage settling, CL = 10 µF, REF2125 2.5 ms
CAPACITIVE LOAD
CL Stable output capacitor value −40°C ≤ TA ≤ 125°C 0.1 10 µF
OUTPUT VOLTAGE
VREF Output voltage REF2125 2.5 V
POWER SUPPLY
VIN Input voltage VREF + VDO 12 V
IL Output current capacity VIN = VREF + VDO(5) to 12 V Sourcing 10 mA
VIN = VREF + VDO(5) to 12 V Sinking –10
IQ Quiescent current −40°C ≤ TA ≤ 125°C Active mode 72 95 µA
−40°C ≤ TA ≤ 125°C Shutdown mode 2.5 3
VDO Dropout voltage IL = 0 mA, TA= 25°C 50 mV
IL = 0 mA, −40°C ≤ TA ≤ +125°C 100
IL = 10 mA, −40°C ≤ TA ≤ +125°C 500
VEN ENABLE pin voltage Voltage reference in active mode (EN = 1) 1.6 V
Voltage reference in shutdown mode (EN = 0) 0.5
IEN ENABLE pin leakage current ENABLE = VIN, −40°C ≤ TA ≤ 125°C 1 2 µA
(1) Temperature drift is specified according to the box method. See Feature Description for more details.
(2) The peak-to-peak noise measurement procedure is explained in more detail in Noise Performance.
(3) Long-term stability measurement procedure is explained in more in detail in Long-Term Stability.
(4) The thermal hysteresis measurement procedure is explained in more detail in Thermal Hysteresis.
(5) Dropout voltage under test condition is 100mV.
(6) In clean start section it is referred as IPEAK.

6.6 Typical Characteristics

at TA = 25°C, VIN = VEN = 12 V, IL = 0 mA , CL = 10 µF, CIN = 0.1 µF (unless otherwise noted)
REF2125 D001_SBAS804.gif
Figure 1. Temperature Drift
REF2125 D004_SBAS804.gif
Figure 3. Quiescent Current vs Temperature
REF2125 D009_SBAS804.gif
Figure 5. Noise Performance 10 Hz to 10 kHz
REF2125 D0102_SBAS804.gif
Figure 7. Load Transient
REF2125 D0104_SBAS804.gif
Figure 9. Load Transient
REF2125 D0112_SBAS804.gif
Figure 11. Line Transient
REF2125 D013_SBAS804.gif
Figure 13. Quiescent Current Shutdown Mode
REF2125 D0162_SBAS804.gif
Figure 15. Thermal Hysteresis Distribution (Cycle 2)
REF2125 D019_SBAS804.gif
Figure 17. Line Regulation
REF2125 D021_SBAS804.gif
1.
Figure 19. Load Regulation Sinking
REF2125 D015_SBAS804.gif
1.
Figure 21. Long Term Stability - 1000 hours (VREF)
REF2125 D002_SBAS804.gif
Figure 2. Output Voltage Accuracy vs Temperature
REF2125 D005_SBAS804.gif
Figure 4. Power-Supply Rejection Ratio vs Frequency
REF2125 D0101_SBAS804.gif
Figure 6. Load Transient
REF2125 D0103_SBAS804.gif
Figure 8. Load Transient
REF2125 D0111_SBAS804.gif
Figure 10. Line Transient
REF2125 D018_SBAS804.gif
Figure 12. Start-Up
REF2125 D0161_SBAS804.gif
Figure 14. Thermal Hysteresis Distribution (Cycle 1)
REF2125 D017_SBAS804.gif
Refer to Solder Heat Shift for more information
Figure 16. Solder Heat Shift Distribution
REF2125 D020_SBAS804.gif
1.
Figure 18. Load Regulation Sourcing
REF2125 D08_SBAS804.gif
1.
Figure 20. 0.1-Hz to 10-Hz Noise (VREF)