The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package (SOT23 equivalent footprint), with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The SM74101 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
SM74101 | WSON (6) | 3.0 mm x 3.0 mm |
Changes from A Revision (April 2013) to B Revision
Changes from * Revision (April 2013) to A Revision
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
IN | 1 | I | TTL compatible thresholds. Pull up to VCC when not used. |
VEE | 2 | - | Connect to either power ground or a negative gate drive supply for positive or negative voltage swing. |
VCC | 3 | I | Locally decouple to VEE. The decoupling capacitor should be located close to the chip. |
OUT | 4 | O | Capable of sourcing 3A and sinking 7A. Voltage swing of this output is from VEE to VCC. |
IN_REF | 5 | - | Connect to power ground (VEE) for standard positive only output voltage swing. Connect to system logic ground when VEE is connected to a negative gate drive supply. |
INB | 6 | I | TTL compatible thresholds. Connect to IN_REF when not used. |
- - - | Exposed Pad | - | Internally bonded to the die substrate. Connect to VEE ground pin for low thermal impedance. |