SNOSBA2B July   2011  – May 2015 SM74101

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Detailed Operating Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Inverting Mode of Operation
      2. 7.4.2 Non-inverting Mode of Operation
    5. 7.5 Thermal Considerations
      1. 7.5.1 Drive Power Requirement Calculations In SM74101
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Trademarks
    2. 11.2 Electrostatic Discharge Caution
    3. 11.3 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VCC to VEE −0.3 15 V
VCC to IN_REF −0.3 15 V
IN/INB to IN_REF −0.3 15 V
IN_REF to VEE −0.3 5 V
Tstg Storage temperature −55 150 °C
Maximum Junction Temperature 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Operating Junction Temperature -40 125 °C
VCC Operating Range VCC – IN_REF and VCC - VEE 3.5 14 V

6.4 Thermal Information

THERMAL METRIC(1) SM74101 UNIT
NGG
6 PINS
RθJA Junction-to-ambient thermal resistance, 0 LFPM Air Flow 40.0 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 50.8
RθJB Junction-to-board thermal resistance 29.3
ψJT Junction-to-top characterization parameter 0.7
ψJB Junction-to-board characterization parameter 29.5
RθJC(bot) Junction-to-case (bottom) thermal resistance 7.5
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

Over operating junction temperature range, VCC = 12 V, INB = IN_REF = VEE = 0V, No Load on output, unless otherwise specified.
PARAMETER TEST CONDITION MIN TYP MAX UNIT
SUPPLY
UVLO VCC Under-voltage Lockout (rising) VCC – IN_REF 2.4 3.0 3.5 V
VCCH VCC Under-voltage Hysteresis 230 mV
ICC VCC Supply Current 1.0 2.0 mA
CONTROL INPUTS
VIH Logic High 2.3 V
VIL Logic Low 0.8 V
VthH High Threshold 1.3 1.75 2.3 V
VthL Low Threshold 0.8 1.35 2.0 V
HYS Input Hysteresis 400 mV
IIL Input Current Low IN = INB = 0V -1 0.1 1 µA
IIH Input Current High IN = INB = VCC -1 0.1 1 µA
OUTPUT DRIVER
ROH Output Resistance High IOUT = -10mA (1) 30 50 Ω
ROL Output Resistance Low IOUT = 10mA (1) 1.4 2.5 Ω
ISOURCE Peak Source Current OUT = VCC/2, 200ns pulsed current 3 A
ISINK Peak Sink Current OUT = VCC/2, 200ns pulsed current 7 A
LATCHUP PROTECTION
AEC–Q100, METHOD 004 TJ = 150°C 500 mA
(1) The output resistance specification applies to the MOS device only. The total output current capability is the sum of the MOS and Bipolar devices.

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
td1 Propagation Delay Time Low to High,
IN/ INB rising ( IN to OUT)		 CLOAD = 2 nF, see Figure 11 and Figure 12 25 40 ns
td2 Propagation Delay Time High to Low,
IN / INB falling (IN to OUT)		 CLOAD = 2 nF, see Figure 11 and Figure 12 25 40 ns
tr Rise time CLOAD = 2 nF , see Figure 11 and Figure 12 14 ns
tf Fall time CLOAD = 2 nF , see Figure 11 and Figure 12 12 ns

6.7 Typical Characteristics

SM74101 30159907.gif
Figure 1. Supply Current vs Frequency
SM74101 30159909.gif
Figure 3. Rise and Fall Time vs Supply Voltage
SM74101 30159911.gif
Figure 5. Rise and Fall Time vs Capacitive Load
SM74101 30159913.gif
Figure 7. Delay Time vs Temperature
SM74101 30159915.gif
Figure 9. UVLO Thresholds and Hysteresis vs Temperature
SM74101 30159908.gif
Figure 2. Supply Current vs Capacitive Load
SM74101 30159910.gif
Figure 4. Rise and Fall Time vs Temperature
SM74101 30159912.gif
Figure 6. Delay Time vs Supply Voltage
SM74101 30159914.gif
Figure 8. RDSON vs Supply Voltage
SM74101 30159916.gif
Figure 10. Peak Current vs Supply Voltage