SLLS753E February 2007 – September 2016 SN65HVD1040-Q1
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
MIN | MAX | UNIT | ||||
---|---|---|---|---|---|---|
VCC | Supply voltage | –0.3 | 6 | V | ||
Voltage at bus terminals (CANH, CANL, SPLIT) | –27 | 40 | V | |||
IO | Receiver output current | 20 | 20 | mA | ||
VI | Voltage input, ac transient pulse(3) (CANH, CANL) | –200 | 200 | V | ||
VI | Voltage input (TXD, STB) | –0.3 | 6 | V | ||
TJ | Junction temperature | –40 | 170 | °C | ||
TA | Operating free-air temperature | –40 | 125 | °C | ||
PD | Average power dissipation | VCC = 5 V, TJ = 27°C, RL = 60 Ω, STB at 0 V, Input to TXD at 500 kHz, 50% duty cycle square wave, CL at RXD = 15 pF |
112 | mW | ||
VCC = 5.5 V, TJ = 130°C, RL = 45 Ω, STB at 0 V, Input to TXD at 500 kHz, 50% duty cycle square wave, CL at RXD = 15 pF |
170 | |||||
Thermal shutdown temperature | 185 | °C | ||||
Tstg | Storage temperature | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)(2) | All pins except 1, 5, 6, and 7 | ±4000 | V |
Pins 1, 5, 6, and 7 | ±8000 | ||||
Charged-device model (CDM), per JEDEC specification JESD22-C101(3) | ±1000 | ||||
Machine model (MM) | ±200 |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | Supply voltage | 4.75 | 5.25 | V | |
VI or VIC | Voltage at any bus terminal (separately or common-mode) | –12 | 12 | V | |
VIH | High-level input voltage | TXD, STB | 2 | 5.25 | V |
VIL | Low-level input voltage | TXD, STB | 0 | 0.8 | V |
VID | Differential input voltage | –6 | 6 | V | |
IOH | High-level output current | Driver | –70 | mA | |
Receiver | –2 | ||||
IOL | Low-level output current | Driver | 70 | mA | |
Receiver | 2 | ||||
TJ | Junction temperature | See Thermal Information. | 150 | °C |
THERMAL METRIC(1) | SN65HVD1040-Q1 | UNIT | ||
---|---|---|---|---|
D (SOIC) | ||||
8 PINS | ||||
RθJA | Junction-to-ambient thermal resistance | Low-K thermal resistance(2) | 211 | °C/W |
High-K thermal resistance(2) | 131 | |||
RθJC(top) | Junction-to-case (top) thermal resistance | 79 | °C/W | |
RθJB | Junction-to-board thermal resistance | 53 | °C/W | |
ψJT | Junction-to-top characterization parameter | 15.4 | °C/W | |
ψJB | Junction-to-board characterization parameter | 53.2 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
ICC | 5-V supply current | Standby mode | STB at VCC, VI = VCC | 6 | 12 | µA | |
Dominant | VI = 0 V, 60-Ω load, STB at 0 V | 50 | 70 | mA | |||
Recessive | VI = VCC, No load, STB at 0 V | 6 | 10 |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VO(D) | Bus output voltage (dominant) | CANH | VI = 0 V, STB at 0 V, RL = 60 Ω, See Figure 11 and Figure 12 |
2.9 | 3.4 | 4.5 | V |
CANL | 0.8 | 1.75 | |||||
VO(R) | Bus output voltage (recessive) | VI = 3 V, STB at 0 V, RL = 60 Ω, See Figure 11 and Figure 12 |
2 | 2.5 | 3 | V | |
VO | Bus output voltage (standby mode) | STB at Vcc, RL = 60 Ω, See Figure 11 and Figure 12 |
–0.1 | 0.1 | V | ||
VOD(D) | Differential output voltage (dominant) | VI = 0 V, RL = 60 Ω, STB at 0 V, See Figure 11, Figure 12, and Figure 13 |
1.5 | 3 | V | ||
VI = 0 V, RL = 45 Ω, STB at 0 V, See Figure 11, Figure 12, and Figure 13 |
1.4 | 3 | |||||
VOD(R) | Differential output voltage (recessive) | VI = 3 V, STB at 0 V, RL = 60 Ω, See Figure 11 and Figure 12 |
–0.012 | 0.012 | V | ||
VI = 3 V, STB at 0 V, No load | –0.5 | 0.05 | |||||
VSYM | Output symmetry (dominant or recessive) (VO(CANH) + VO(CANL)) | STB at 0 V, RL = 60 Ω, See Figure 23 | 0.9 × VCC | VCC | 1.1 × VCC | V | |
VOC(ss) | Steady-state common-mode output voltage | STB at 0 V, RL = 60 Ω, See Figure 18 | 2 | 2.5 | 3 | V | |
ΔVOC(ss) | Change in steady-state common-mode output voltage | STB at 0 V, RL = 60 Ω, See Figure 18 | 30 | mV | |||
IIH | High-level input current, TXD input | VI at VCC | –2 | 2 | µA | ||
IIL | Low-level input current, TXD input | VI at 0 V | –50 | –10 | µA | ||
IO(off) | Power-off TXD output current | VCC at 0 V, TXD at 5 V | 1 | µA | |||
IOS(ss) | Short-circuit steady-state output current | VCANH = –12 V, CANL open, See Figure 21 |
–120 | –85 | mA | ||
VCANH = 12 V, CANL open, See Figure 21 |
0.4 | 1 | |||||
VCANL = –12 V, CANH open, See Figure 21 |
–1 | –0.6 | |||||
VCANL = 12 V, CANH open, See Figure 21 |
75 | 120 | |||||
CO | Output capacitance | See receiver input capacitance |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VIT+ | Positive-going input threshold voltage, high-speed mode | STB at 0 V, See Table 1 | 800 | 900 | mV | ||
VIT– | Negative-going input threshold voltage, high-speed mode | STB at 0 V, See Table 1 | 500 | 650 | mV | ||
Vhys | Hysteresis voltage (VIT+ – VIT–) | 100 | 125 | mV | |||
VIT | Input threshold voltage, standby mode | STB at VCC | 500 | 1150 | mV | ||
VOH | High-level output voltage | IO = –2 mA, See Figure 16 | 4 | 4.6 | V | ||
VOL | Low-level output voltage | IO = 2 mA, See Figure 16 | 0.2 | 0.4 | V | ||
II(off) | Power-off bus input current | CANH = CANL = 5 V, VCC at 0 V, TXD at 0 V |
3 | µA | |||
IO(off) | Power-off RXD leakage current | VCC at 0 V, RXD at 5 V | 20 | µA | |||
CI | Input capacitance to ground (CANH or CANL) | TXD at 3 V, VI = 0.4 sin (4E6πt) + 2.5 V |
12 | pF | |||
CID | Differential input capacitance | TXD at 3 V, VI = 0.4 sin (4E6πt) | 2 | pF | |||
RID | Differential input resistance | TXD at 3 V, STB at 0 V | 30 | 80 | kΩ | ||
RIN | Input resistance (CANH or CANL) | TXD at 3 V, STB at 0 V | 15 | 30 | 40 | kΩ | |
RI(m) | Input resistance matching [1 – (RIN (CANH) / RIN (CANL))] × 100% |
V(CANH) = V(CANL) | –3% | 0% | 3% |
PARAMETER | TEST CONDITIONS | MIN | MAX | UNIT | |
---|---|---|---|---|---|
td(LOOP1) | Total loop delay, driver input to receiver output, recessive to dominant | STB at 0 V, See Figure 19 | 90 | 230 | ns |
td(LOOP2) | Total loop delay, driver input to receiver output, dominant to recessive | 90 | 230 | ns |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tPLH | Propagation delay time, low-to-high level output | STB at 0 V, See Figure 14 | 25 | 65 | 120 | ns |
tPHL | Propagation delay time, high-to-low level output | STB at 0 V, See Figure 14 | 25 | 45 | 120 | ns |
tr | Differential output signal rise time | STB at 0 V, See Figure 14 | 25 | ns | ||
tf | Differential output signal fall time | STB at 0 V, See Figure 14 | 45 | ns | ||
ten | Enable time from standby mode to dominant | See Figure 17 | 10 | µs | ||
t(dom) | Dominant time-out | ↓VI, See Figure 20 | 300 | 450 | 700 | µs |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tPLH | Propagation delay time, low-to-high-level output | STB at 0 V, See Figure 16 | 60 | 90 | 130 | ns |
tPHL | Propagation delay time, high-to-low-level output | STB at 0 V, See Figure 16 | 45 | 70 | 130 | ns |
tr | Output signal rise time | STB at 0 V, See Figure 16 | 8 | ns | ||
tf | Output signal fall time | STB at 0 V, See Figure 16 | 8 | ns | ||
tBUS | Dominant time required on bus for wakeup from standby | STB at VCC, See Figure 22 | 1.5 | 5 | µs |
PARAMETER | TEST CONDITIONS | MIN | MAX | UNIT | |
---|---|---|---|---|---|
IIH | High-level input current | STB at VCC | –10 | 0 | µA |
IIL | Low-level input current | STB at 0 V | –10 | 0 | µA |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VO | Output voltage | –500 µA < IO < 500 µA | 0.3 × VCC | 0.5 × VCC | 0.7 × VCC | V |
IO(stb) | Leakage current, standby mode | STB at 2 V, –12 V ≤ VO ≤ 12 V | –5 | 5 | µA |