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  • SNx5HVD251 Industrial CAN Bus Transceiver

    • SLLS545G November   2002  – October 2015 SN55HVD251 , SN65HVD251

      PRODUCTION DATA.  

  • CONTENTS
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  • SNx5HVD251 Industrial CAN Bus Transceiver
  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Supply Current
    6. 6.6  Electrical Characteristics: Driver
    7. 6.7  Electrical Characteristics: Receiver
    8. 6.8  VREF-Pin Characteristics
    9. 6.9  Power Dissipation Characteristics
    10. 6.10 Switching Characteristics: Driver
    11. 6.11 Switching Characteristics: Device
    12. 6.12 Switching Characteristics: Receiver
    13. 6.13 Dissipation Ratings
    14. 6.14 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Mode Control
      2. 8.3.2 High-Speed Mode
      3. 8.3.3 Slope Control Mode
      4. 8.3.4 Low-Power Mode
      5. 8.3.5 Thermal Shutdown
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Bus Loading, Length, and Number of Nodes
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 CAN Termination
        2. 9.2.2.2 Loop Propagation Delay
      3. 9.2.3 Application Curve
    3. 9.3 System Example
      1. 9.3.1 ISO 11898 Compliance of HVD251 5-V CAN Bus Transceiver
        1. 9.3.1.1 Introduction
        2. 9.3.1.2 Differential Signal
        3. 9.3.1.3 Common-Mode Signal
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
  14. IMPORTANT NOTICE

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DATA SHEET

SNx5HVD251 Industrial CAN Bus Transceiver

1 Features

  • Drop-In Improved Replacement for the PCA82C250 and PCA82C251
  • Bus-Fault Protection of ±36 V
  • Meets or Exceeds ISO 11898
  • Signaling Rates(1) up to 1 Mbps
  • High Input Impedance Allows up to 120 Nodes on a Bus
  • Bus Pin ESD Protection Exceeds 14 kV HBM
  • Unpowered Node Does Not Disturb the Bus
  • Low-Current Standby Mode: 200-µA Typical
  • Thermal Shutdown Protection
  • Glitch-Free Power-Up and Power-Down CAN Bus Protection for Hot-Plugging
  • DeviceNet Vendor ID #806 (1)
(1) The signaling rate of a line is the number of voltage transitions that are made per second expressed in bps (bits per second).

2 Applications

  • CAN Data Buses
  • Industrial Automation
  • SAE J1939 Standard Data Bus Interface
  • NMEA 2000 Standard Data Bus Interface

Block Diagram

SN55HVD251 SN65HVD251 BlockDiagram_slls545.gif

3 Description

The HVD251 is intended for use in applications employing the Controller Area Network (CAN) serial communication physical layer in accordance with the ISO 11898 Standard. The HVD251 provides differential transmit capability to the bus and differential receive capability to a CAN controller at speeds up to 1 megabits per second (Mbps).

Designed for operation in harsh environments, the device features cross-wire, overvoltage and loss of ground protection to ±36 V. Also featured are overtemperature protection as well as –7-V to 12-V common-mode range, and tolerance to transients of ±200 V. The transceiver interfaces the single-ended CAN controller with the differential CAN bus found in industrial, building automation, and automotive applications.

Rs, pin 8, selects one of three different modes of operation: high-speed, slope control, or low-power mode. The high-speed mode of operation is selected by connecting pin 8 to ground, allowing the transmitter output transistors to switch as fast as possible with no limitation on the rise and fall slope. The rise and fall slope can be adjusted by connecting a resistor to ground at pin 8; the slope is proportional to the pin's output current. Slope control with an external resistor value of 10 kΩ gives about 15-V / µs slew rate; 100 kΩ gives about 2-V/µs slew rate.

If a high logic level is applied to the Rs pin 8, the device enters a low-current standby mode where the driver is switched off and the receiver remains active. The local protocol controller returns the device to the normal mode when it transmits to the bus.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
SN55HVD251 WSON (8) 4.00 mm × 4.00 mm
SN65HVD251 SOIC (8) 4.90 mm × 3.91 mm
PDIP (8) 9.81 mm × 6.35 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

4 Revision History

Changes from F Revision (June 2015) to G Revision

  • Changed the value of HBM "All pins" From: ±14000 V To: ±6000 V. Changed the value of "CANH, CANL and GND" From: ±6000 V To: ±14000 V in the ESD RatingsGo

Changes from E Revision (March 2010) to F Revision

  • Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go
  • Changed the location of section "6.12 VREF-Pin Characteristics" to section 6.8 Go

Changes from C Revision (September 2005) to D Revision

  • Added device SN55HVD251Go
  • Added the DRJ Package.Go
  • Changed the data sheet title From: CAN TRANSCEIVER To: INDUSTRIAL CAN TRANSCEIVERGo
  • Deleted APPLICATIONS bullets: DeviceNet™ Data Buses, Smart Distributed Systems (SDS™), and ISO 11783 Standard Data Bus InterfaceGo
  • Deleted last paragraph from the DESCRIPTION - "The HVD251 may be used..."Go
  • Added Electrical fast transient/burst to the Abs Max Ratings tableGo
  • Deleted the condition - over recommended operating conditions (unless otherwise noted). From the RECOMMENDED OPERATING CONDITIONS tableGo
  • Added SN55HVD251 to the Operating free-air temperature, TA in the ROC tableGo
  • Added DRJ to the Junction-to-case thermal resistanceGo
  • Added DRJ to the Junction-to-board thermal resistanceGo
  • Added the SUPPLY CURRENT tableGo
  • Deleted ICC - Supply current from the DRIVER ELECTRICAL CHARACTERISTICSGo
  • Added T ≥ -40°C to VO(D) Test Conditions in the DRIVER ELECTRICAL CHARACTERISTICS Go
  • Added RNODE = 330 Ω to Differential output voltage (Dominant) (second line of Test Conditions) in the DRIVER ELECTRICAL tableGo
  • Added a third line of Test Conditions to Differential output voltage (Dominant) in the DRIVER ELECTRICAL tableGo
  • Added T ≤ 85°C to VOD®) Test Conditions in the DRIVER ELECTRICAL CHARACTERISTICS Go
  • Deleted ICC - Supply current from the RECEIVER ELECTRICAL CHARACTERISTICSGo
  • Added Receiver noise rejection row to the RECEIVER ELECTRICAL CHARACTERISTIC tableGo
  • Added TYP values to the Differential output signal rise and fall times in the DRIVER SWITCHING CHARACTERISTIC tableGo
  • Changed table title From: ABSOLUTE MAXIMUM POWER DISSIPATION RATINGS To: PACKAGE DISSIPATION RATINGSGo
  • Added the SON (DRJ) option to the PACKAGE DISSIPATION RATINGS tableGo
  • Changed Figure 1 title From: tLOOP1-LOOP TIME To: RECESSIVE-TO-DOMINANT LOOP DELAYGo
  • Changed Figure 2 title From: tLOOP2-LOOP TIME To: DOMINANT-TO-RECESSIVE LOOP DELAYGo
  • Changed Figure 4 From: DRIVER LOW-LEVEL OUTPUT CURRENT vs LOW-LEVEL OUTPUT VOLTAGE To: DRIVER OUTPUT VOLTAGE vs OUTPUT CURRENTGo
  • Changed Figure 5 From: DRIVER HIGH-LEVEL OUTPUT CURRENT vs HIGH-LEVEL OUTPUT VOLTAGE To: DRIVER DIFFERENTIAL OUTPUT VOLTAGE vs OUTPUT CURRENTGo
  • Changed Figure 8 title From: DIFFERENTIAL OUTPUT FALL TIME To: DIFFERENTIAL OUTPUT TRANSITION TIMEGo
  • Changed Figure 12 - Driver VOD, label RNODE was 330Ω±1%Go
  • Changed Table 1 header From: MEASURED To: DIFFERENTIAL INPUTGo
  • Added Note B to Figure 22Go
  • Added a row ( X Open) to Table 2 - DriverGo

Changes from B Revision (September 2003) to C Revision

  • Changed the front page format.Go
  • Changed Junction temperature, TJ - SOIC Package MAX value From 150°C To: 145°CGo
  • Changed the THERMAL CHARACTERISTICS table valuesGo
  • Changed the ABSOLUTE MAXIMUM POWER DISSIPATION RATINGS table valuesGo

Changes from A Revision (September 2003) to B Revision

  • Changed the front page format.Go
  • Changed DESCRIPTION text From: and tolerance to transients of ±50 V To: and tolerance to transients of ±200 VGo

Changes from * Revision (November 2002) to A Revision

  • Changed multiple items within the document.Go

5 Pin Configuration and Functions

D Package
8-Pin SOIC
Top View
SN55HVD251 SN65HVD251 po_lls545.gif

Pin Functions

PIN I/O DESCRIPTION
NAME NO.
CANH 7 I/O High-level CAN bus line
CANL 6 I/O Low-level CAN bus line
D 1 I CAN transmit data input (LOW for dominant and HIGH for recessive bus states), also called TXD, driver input
GND 2 GND Ground connection
R 4 O CAN receive data output (LOW for dominant and HIGH for recessive bus states), also called RXD, receiver output
RS 8 I Mode select pin: strong pulldown to GND = high-speed mode, strong pull up to VCC = low-power mode, 10-kΩ to 100-kΩ pulldown to GND = slope control mode
VCC 3 Supply Transceiver 5-V supply voltage
VREF 5 O Reference output voltage

6 Specifications

6.1 Absolute Maximum Ratings(1)(2)

MIN MAX UNIT
Supply voltage, VCC –0.3 7 V
Voltage at any bus pin(CANH or CANL) –36 36 V
Transient voltage per ISO 7637, pulse 1, 2, 3a, 3b CANH, CANL –200 200 V
Input voltage, VI (D, Rs, or R) –0.3 VCC + 0.5 V
Receiver output current, IO –10 10 mA mA
Electrical fast transient/burst IEC 61000-4-4, Classification B CANH, CANL –3 3 kV
Continuous total power dissipation (see Dissipation Ratings)
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential I/O bus voltages, are with respect to network ground pin.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) All pins ±6000 V
CANH, CANL and GND ±14000
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN NOM MAX UNIT
Supply voltage, VCC 4.5 5.5 V
Voltage at any bus terminal (separately or common mode) VI or VIC –7(1) 12 V
High-level input voltage, VIH D input 0.7 VCC V
Low-level input voltage, VIL D input 0.3 VCC V
Differential input voltage, VID –6 6 V
Input voltage to Rs, VI(Rs) 0 VCC V
Input voltage at Rs for standby, VI(Rs) 0.75 VCC VCC V
Rs wave-shaping resistance 0 100 kΩ
High-level output current, IOH Driver –50 mA
Receiver –4
Low-level output current, IOL Driver 50 mA
Receiver 4
Operating free-air temperature, TA SN65HVD251 –40 125 °C
SN55HVD251 –55 125
Junction temperature, TJ 145 °C
(1) The algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet.

6.4 Thermal Information

THERMAL METRIC(1) SN55HVD251 SN65HVD251 UNIT
DRJ (SON) D (SOIC) P (PDIP)
8 PINS 8 PINS 8 PINS
RθJC(top) Junction-to-case (top) thermal resistance 52 44.6 66.6 °C/W
RθJB Junction-to-board thermal resistance 73 78.7 48.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Supply Current

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
ICC Supply current Standby Rs at VCC, D at VCC 275 µA
Dominant D at 0 V, 60-Ω load, Rs at 0 V 65 mA
Recessive D at VCC, no load, Rs at 0 V 14
(1) All typical values are at 25°C and with a 5-V supply.

6.6 Electrical Characteristics: Driver

over recommended operating conditions (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VO(D) Bus output voltage (Dominant) CANH Figure 10 and Figure 11 ,
D at 0 V Rs at 0 V, T ≥ –40°C 		2.75 3.5 4.5 V
CANL 0.5 2
VO(R) Bus output voltage (Recessive) CANH Figure 10 and Figure 11 , D at 0.7 VCC,
Rs at 0 V		 2 2.5 3
CANL 2 2.5 3
VOD(D) Differential output voltage (Dominant) Figure 10 , D at 0 V, Rs at 0 V 1.5 2 3 V
Figure 12 , D at 0 V, Rs at 0 V, RNODE = 330 Ω 1.2 2 3.1 V
Figure 12 , D at 0 V, Rs at 0 V, RNODE = 165 Ω, VCC ≥ 4.75 V 1.2 2 3.1 V
VOD(R) Differential output voltage (Recessive) Figure 10 and Figure 11 , D at 0.7 VCC –120 12 mV
D at 0.7 VCC, no load, T ≤ 85°C –0.5 0.05 V
VOC(pp) Peak-to-peak common-mode output voltage Figure 18, Rs at 0 V 600 mV
IIH High-level input current, D Input D at 0.7 VCC –40 0 µA
IIL Low-level input current, D Input D at 0.3 VCC –60 0 µA
IOS(SS) Short-circuit steady-state output current Figure 20, VCANH at –7 V, CANL Open –200 mA
Figure 20, VCANH at 12 V, CANL Open 2.5
Figure 20, VCANL at -7 V, CANH Open –2
Figure 20, VCANL at 12 V, CANH Open 200
CO Output capacitance See receiver input capacitance
IOZ High-impedance output current See receiver input current
IIRs(s) Rs input current for standby Rs at 0.75 VCC –10 µA
IIRs(f) Rs input current for full speed operation Rs at 0 V –550 0 µA
(1) All typical values are at 25°C and with a 5-V supply.

6.7 Electrical Characteristics: Receiver

over recommended operating conditions (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIT+ Positive-going input threshold voltage Rs at 0 V, (See Table 1) 750 900 mV
VIT- Negative-going input threshold voltage 500 650
Vhys Hysteresis voltage (VIT+ - VIT-) 100
VOH High-level output voltage Figure 15, IO = –4 mA 0.8 VCC V
VOL Low-level output voltage Figure 15, IO = 4 mA 0.2 VCC V
II Bus input current CANH or CANL at 12 V Other bus pin at 0 V, Rs at 0 V, D at 0.7 VCC 600 µA
CANH or CANL at 12 V, VCC at 0 V 715
CANH or CANL at -7 V –460
CANH or CANL at -7 V, VCC at 0 V –340
CI Input capacitance, (CANH or CANL) Pin-to-ground, VI = 0.4 sin (4E6πt) + 0.5 V, D at 0.7 VCC 20 pF
CID Differential input capacitance Pin-to-pin, VI = 0.4 sin (4E6πt) + 0.5 V, D at 0.7 VCC 10 pF
RID Differential input resistance D at 0.7 VCC, Rs at 0 V 40 100 kΩ
RIN Input resistance, (CANH or CANL) D at 0.7 VCC, Rs at 0 V 20 50 kΩ
Receiver noise rejection See Figure 22

6.8 VREF-Pin Characteristics

over recommended operating conditions (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VO Reference output voltage –5 µA < IO < 5 µA 0.45 VCC 0.55 VCC V
–50 µA < IO < 50 µA 0.4 VCC 0.6 VCC

6.9 Power Dissipation Characteristics

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
PD Device power dissipation VCC = 5 V, Tj = 27°C, RL = 60 Ω,
RS at 0 V, Input to D a 500-kHz
50% duty cycle square wave		 97.7 mW
VCC = 5.5 V, Tj = 130°C, RL = 60 Ω,
RS at 0 V, Input to D a 500-kHz
50% duty cycle square wave		 142 mW
TSD Thermal shutdown junction temperature 165 °C

6.10 Switching Characteristics: Driver

over recommended operating conditions (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tpLH Propagation delay time, low-to-high-level output Figure 13, Rs at 0 V 40 70
Figure 13, Rs with 10 kΩ to ground 90 125
Figure 13, Rs with 100 kΩ to ground 500 800
tpHL Propagation delay time, high-to-low-level output Figure 13, Rs at 0 V 85 125
Figure 13, Rs with 10 kΩ to ground 200 260
Figure 13, Rs with 100 kΩ to ground 1150 1450
tsk(p) Pulse skew (|tpHL - tpLH|) Figure 13, Rs at 0 V 45 85
Figure 13, Rs with 10 kΩ to ground 110 180 ns
Figure 13, Rs with 100 kΩ to ground 650 900
tr Differential output signal rise time Figure 13, Rs at 0 V 35 80 100
tf Differential output signal fall time 35 80 100
tr Differential output signal rise time Figure 13, Rs with 10 kΩ to ground 100 150 250
tf Differential output signal fall time 100 150 250
tr Differential output signal rise time Figure 13, Rs with 100 kΩ to ground 600 950 1550
tf Differential output signal fall time 600 950 1550
ten Enable time from standby to dominant Figure 17 0.5 µs

6.11 Switching Characteristics: Device

over recommended operating conditions (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tloop1 Total loop delay, driver input to receiver output, recessive to dominant Figure 19, Rs at 0 V 60 100 ns
Figure 19, Rs with 10 kΩ to ground 100 150
Figure 19, Rs with 100 kΩ to ground 440 800
tloop2 Total loop delay, driver input to receiver output, dominant to recessive Figure 19, Rs at 0 V 115 150 ns
Figure 19, Rs with 10 kΩ to ground 235 290
Figure 19, Rs with 100 kΩ to ground 1070 1450
tloop2 Total loop delay, driver input to receiver output, dominant to recessive Figure 19, Rs at 0 V, VCC from 4.5 V to 5.1 V 105 145 ns

6.12 Switching Characteristics: Receiver

over recommended operating conditions (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tpLH Propagation delay time, low-to-high-level output Figure 15 35 50
tpHL Propagation delay time, high-to-low-level output 35 50
tsk(p) Pulse skew (|tpHL - tpLH|) 20 ns
tr Output signal rise time 2 4
tf Output signal fall time 2 4
tp(sb) Propagation delay time in standby Figure 21, Rs at VCC 500

6.13 Dissipation Ratings

PACKAGE CIRCUIT BOARD MODEL TA = 25°C
POWER RATING		 DERATING FACTOR (1) ABOVE TA = 25°C TA = 85°C POWER RATING TA = 125°C POWER RATING
SOIC (D) Low-K(2) 576 mW 4.8 mW/°C 288 mW 96 mW
High-K(3) 924 mW 7.7 mW/°C 462 mW 154 mW
PDIP (P) Low-K(2) 888 mW 7.4 mW/°C 444 mW 148 mW
High-K(3) 1212 mW 10.1 mW/°C 606 mW 202 mW
WSON (DRJ) Low-K(2) 403 mW 4.03 mW/°C 262 mW 100 mW
High-K
(no Vias)(3) 		1081 mW 10.8 mW/°C 703 mW 270 mW
High-K
(with Vias)		 2793 mW 27.9 mW/°C 1815 mW 698 mW
(1) This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.
(2) In accordance with the Low-K thermal metric definitions of EIA/JESD51-3.
(3) In accordance with the High-K thermal metric definitions of EIA/JESD51-7.

6.14 Typical Characteristics

SN55HVD251 SN65HVD251 Tloop1VsFAT_lls545.gif Figure 1. Recessive-to-Dominant Loop Delay vs Free-Air Temperature
SN55HVD251 SN65HVD251 IccVsSigRate_lls545.gif Figure 3. Supply Current (RMS) vs Signaling Rate
SN55HVD251 SN65HVD251 Dov_v_Oc2_lls545.gif Figure 5. Driver Differential Output Voltage vs Output Current
SN55HVD251 SN65HVD251 IoVsVcc_lls545.gif Figure 7. Driver Output Current vs Supply Voltage
SN55HVD251 SN65HVD251 r_v_temp_lls545.gif Figure 9. Input Resistance Matching vs Free-Air Temperature
SN55HVD251 SN65HVD251 Tloop2VsFAT_lls545.gif Figure 2. Dominant-to-Recessive Loop Delay vs Free-Air Temperature
SN55HVD251 SN65HVD251 Dov_v_Oc_lls545.gif Figure 4. Driver Output Voltage vs Output Current
SN55HVD251 SN65HVD251 Vod_D_VsFAT_lls545.gif Figure 6. Dominant Differential Output Voltage vs free-Air Temperature
SN55HVD251 SN65HVD251 OFallTmVsRes_lls545.gif Figure 8. Differential Output Transition Time vs Slope Resistance (Rs)

 
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