JAJSGU3H March   2012  – March 2019 SN65HVD72 , SN65HVD75 , SN65HVD78

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      代表的なアプリケーションの図
  4. 4 改訂履歴
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Power Dissipation
    7. 7.7  Switching Characteristics: 250 kbps Device (SN65HVD72) Bit Time ≥ 4 µs
    8. 7.8  Switching Characteristics: 20 Mbps Device (SN65HVD75) Bit Time ≥50 ns
    9. 7.9  Switching Characteristics: 50 Mbps Device (SN65HVD78) Bit Time ≥20 ns
    10. 7.10 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
        1. 10.2.1.1 Data Rate and Bus Length
        2. 10.2.1.2 Stub Length
        3. 10.2.1.3 Bus Loading
        4. 10.2.1.4 Receiver Failsafe
        5. 10.2.1.5 Transient Protection
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 External Transient Protection
        2. 10.2.2.2 Isolated Bus Node Design
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13デバイスおよびドキュメントのサポート
    1. 13.1 デバイス・サポート
      1. 13.1.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 13.2 ドキュメントのサポート
      1. 13.2.1 関連資料
    3. 13.3 関連リンク
    4. 13.4 コミュニティ・リソース
    5. 13.5 商標
    6. 13.6 静電気放電に関する注意事項
    7. 13.7 Glossary
  14. 14メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

10.2.1.5 Transient Protection

The bus pins of the SN65HVD7x transceiver family possess on-chip ESD protection against ±15-kV human body model (HBM) and ±12-kV IEC 61000-4-2 contact discharge. The IEC-ESD test is far more severe than the HBM-ESD test. The 50% higher charge capacitance, CS, and 78% lower discharge resistance, RD, of the IEC-model produce significantly higher discharge currents than the HBM-model.

As stated in the IEC 61000-4-2 standard, contact discharge is the preferred test method; although IEC air-gap testing is less repeatable than contact testing, air discharge protection levels are inferred from the contact discharge test results.

SN65HVD72 SN65HVD75 SN65HVD78 HBM_app_llse11.gifFigure 23. HBM and IEC-ESD Models and Currents in Comparison (HBM Values in Parenthesis)

The on-chip implementation of IEC ESD protection significantly increases the robustness of equipment. Common discharge events occur due to human contact with connectors and cables. Designers may choose to implement protection against longer duration transients, typically referred to as surge transients.

EFTs are generally caused by relay-contact bounce or the interruption of inductive loads. Surge transients often result from lightning strikes (direct strike or an indirect strike which induce voltages and currents), or the switching of power systems, including load changes and short circuit switching. These transients are often encountered in industrial environments, such as factory automation and power-grid systems.

Figure 24 compares the pulse-power of the EFT and surge transients with the power caused by an IEC ESD transient. The left-hand diagram shows the relative pulse-power for a 0.5-kV surge transient and 4-kV EFT transient, both of which dwarf the 10-kV ESD transient visible in the lower-left corner. 500-V surge transients are representative of events that may occur in factory environments in industrial and process automation.

The right-hand diagram shows the pulse-power of a 6-kV surge transient, relative to the same 0.5-kV surge transient. 6-kV surge transients are most likely to occur in power generation and power-grid systems.

SN65HVD72 SN65HVD75 SN65HVD78 power_comp_sllsei9.gifFigure 24. Power Comparison of ESD, EFT, and Surge Transients

In the case of surge transients, high-energy content is characterized by long pulse duration and slow decaying pulse power. The electrical energy of a transient that is dumped into the internal protection cells of a transceiver is converted into thermal energy which heats and destroys the protection cells, thus destroying the transceiver. Figure 25 shows the large differences in transient energies for single ESD, EFT, and surge transients, as well as for an EFT pulse train, commonly applied during compliance testing.

SN65HVD72 SN65HVD75 SN65HVD78 comp_trans_sllsei9.gifFigure 25. Comparison of Transient Energies