SCES603K August   2004  – October 2014 SN74AUP1G34

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplifed Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Function
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  Handling Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Switching Characteristics, CL = 5 pF
    7. 7.7  Switching Characteristics, CL = 10 pF
    8. 7.8  Switching Characteristics, CL = 15 pF
    9. 7.9  Switching Characteristics, CL = 30 pF
    10. 7.10 Operating Characteristics
    11. 7.11 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Propagation Delays, Setup and Hold Times, and Pulse Width
    2. 8.2 Enable and Disable Times
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Trademarks
    2. 13.2 Electrostatic Discharge Caution
    3. 13.3 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

13 Device and Documentation Support

13.1 Trademarks

All other trademarks are the property of their respective owners.

13.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

13.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.