SCAS755B December 2003 – June 2014 SN74LVC16373A
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | Supply voltage range | –0.5 | 6.5 | V | |
VI | Input voltage range(2) | –0.5 | 6.5 | V | |
VO | Voltage range applied to any output in the high-impedance or power-off state(2) | –0.5 | 6.5 | V | |
VO | Voltage range applied to any output in the high or low state(2)(3) | –0.5 | VCC + 0.5 | V | |
IIK | Input clamp current | VI < 0 | –50 | mA | |
IOK | Output clamp current | VO < 0 | –50 | mA | |
IO | Continuous output current | ±50 | mA | ||
Continuous current through each VCC or GND | ±100 | mA |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
Tstg | Storage temperature range | –65 | 150 | °C | |
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | 0 | 2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | 0 | 1000 |
THERMAL METRIC(1) | DL | UNIT | |
---|---|---|---|
48 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 68.4 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 34.7 | |
RθJB | Junction-to-board thermal resistance | 41.0 | |
ψJT | Junction-to-top characterization parameter | 12.3 | |
ψJB | Junction-to-board characterization parameter | 40.4 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a |
PARAMETER | TEST CONDITIONS | VCC | MIN | TYP(1) | MAX | UNIT | |
---|---|---|---|---|---|---|---|
VOH | IOH = –100 μA | 1.65 V to 3.6 V | VCC – 0.2 | V | |||
IOH = –4 mA | 1.65 V | 1.2 | |||||
IOH = –8 mA | 2.3 V | 1.7 | |||||
IOH = –12 mA | 2.7 V | 2.2 | |||||
3 V | 2.4 | ||||||
IOH = –24 mA | 3 V | 2.2 | |||||
VOL | IOL = 100 μA | 1.65 V to 3.6 V | 0.2 | V | |||
IOL = 4 mA | 1.65 V | 0.45 | |||||
IOL = 8 mA | 2.3 V | 0.7 | |||||
IOL = 12 mA | 2.7 V | 0.4 | |||||
IOL = 24 mA | 3 V | 0.55 | |||||
II | VI = 0 to 5.5 V | 3.6 V | ±5 | μA | |||
Ioff | VI or VO = 5.5 V | 0 | ±10 | μA | |||
IOZ | VO = 0 to 5.5 V | 3.6 V | ±10 | μA | |||
ICC | VI = VCC or GND | IO = 0 | 3.6 V | 20 | μA | ||
3.6 V ≤ VI ≤ 5.5 V(2) | 20 | ||||||
ΔICC | One input at VCC – 0.6 V, Other inputs at VCC or GND | 2.7 V to 3.6 V | 500 | μA | |||
Ci | VI = VCC or GND | 3.3 V | 5 | pF | |||
Co | VO = VCC or GND | 3.3 V | 6.5 | pF |
VCC = 1.8 V ± 0.15 V | VCC = 2.5 V ± 0.2 V | VCC = 2.7 V | VCC = 3.3 V ± 0.3 V | UNIT | ||||||
---|---|---|---|---|---|---|---|---|---|---|
MIN | MAX | MIN | MAX | MIN | MAX | MIN | MAX | |||
tw | Pulse duration, LE high | 3.3 | 3.3 | 3.3 | 3.3 | ns | ||||
tsu | Setup time, data before LE↓ | 1.6 | 1.2 | 1.7 | 1.7 | ns | ||||
th | Hold time, data after LE↓ | 1 | 1.1 | 1.2 | 1.2 | ns |
PARAMETER | FROM (INPUT) |
TO (OUTPUT) |
VCC = 1.8 V ± 0.15 V |
VCC = 2.5 V ± 0.2 V |
VCC = 2.7 V | VCC = 3.3 V ± 0.3 V |
UNIT | ||||
---|---|---|---|---|---|---|---|---|---|---|---|
MIN | MAX | MIN | MAX | MIN | MAX | MIN | MAX | ||||
tpd | D | Q | 1.5 | 6.4 | 1 | 4.2 | 1 | 4.9 | 1.6 | 4.2 | ns |
LE | 1.5 | 7.1 | 1 | 4.8 | 1 | 5.3 | 2.1 | 4.6 | |||
ten | OE | Q | 1.5 | 6.7 | 1 | 4.7 | 1 | 5.7 | 1.3 | 4.7 | ns |
tdis | OE | Q | 1.5 | 8.4 | 1 | 5 | 1 | 6.3 | 2.5 | 5.9 | ns |
PARAMETER | TEST CONDITIONS |
VCC = 1.8 V | VCC = 2.5 V | VCC = 3.3 V | UNIT | ||||
---|---|---|---|---|---|---|---|---|---|
TYP | TYP | TYP | |||||||
Cpd | Power dissipation capacitance per latch |
Outputs enabled | f = 10 MHz | 32 | 35 | 39 | pF | ||
Outputs disabled | 4 | 4 | 6 |