SCES215Y April   1999  – December 2017 SN74LVC1GU04

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics: TA = -40°C to +85°C
    7. 6.7 Switching Characteristics: TA = -40°C to +125°C
    8. 6.8 Operating Characteristics
    9. 6.9 Typical Characteristic
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Balanced High-Drive CMOS Push-Pull Outputs
      2. 8.3.2 Standard CMOS Inputs
      3. 8.3.3 Negative Clamping Diodes
      4. 8.3.4 Partial Power Down (Ioff)
      5. 8.3.5 Over-voltage Tolerant Inputs
      6. 8.3.6 Unbuffered Logic
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DPW|5
  • DBV|5
  • DSF|6
  • DCK|5
  • YZV|4
  • DRL|5
  • YZP|5
  • DRY|6
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage –0.5 6.5 V
VI Input voltage(2) –0.5 6.5 V
VO Voltage applied to any output in the high or low state(2)(3) –0.5 VCC + 0.5 V
IIK Input clamp current VI < 0 –50 mA
IOK Output clamp current VO < 0 –50 mA
IO Continuous output current ±50 mA
Continuous current through VCC or GND ±100 mA
TJ Maximum junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.
(3) The value of VCC is provided in Recommended Operating Conditions.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101 ±1000

6.3 Recommended Operating Conditions

See (1).
MIN MAX UNIT
VCC Supply voltage 1.65 5.5 V
VIH High-level input voltage IO = –100 μA 0.75 × VCC V
VIL Low-level input voltage IO = 100 μA 0.25 × VCC V
VI Input voltage 0 5.5 V
VO Output voltage 0 VCC V
IOH High-level output current VCC = 1.65 V –4 mA
VCC = 2.3 V –8
VCC = 3 V –16
–24
VCC = 4.5 V –32
IOL Low-level output current VCC = 1.65 V 4 mA
VCC = 2.3 V 8
VCC = 3 V 16
24
VCC = 4.5 V 32
TA Operating free-air temperature –40 125 °C
(1) All unused inputs of the device must be held at VCC or GND to ensure proper device operation. For more information, see the Implications of Slow or Floating CMOS Inputs application report.

6.4 Thermal Information

THERMAL METRIC(1) SN74LVC1GU04 UNIT
DBV
(SOT-23)		 DCK
(SC70)		 DRL
(SOT-5X3)		 DRY
(SON)		 DSF
(SON)		 DPW
(X2SON)		 YZV
(DSBGA)		 YZP
(DSBGA)
5 PINS 5 PINS 5 PINS 5 PINS 5 PINS 5 PINS 4 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance 231.5 276.1 296.2 369.6 410.3 511 168.2 144.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 139.4 178.9 137.3 257.6 208.4 241.9 2.1 1.3 °C/W
RθJB Junction-to-board thermal resistance 71.1 70.9 145.3 230.8 262.6 374.2 55.9 39.9 °C/W
ψJT Junction-to-top characterization parameter 45.2 47 14.7 77.2 36 45 1.1 0.5 °C/W
ψJB Junction-to-board characterization parameter 70.7 69.3 145.9 231 262.3 373.3 56.3 39.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A N/A N/A N/A 168.0 N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

over recommended operating free-air temperature range, TA = –40°C to +125°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
VOH High-level output voltage VIL = 0 V, IOH = –100 µA, VCC = 1.65 V to 5.5 V VCC  – 0.1 V
VIL = 0 V, IOH = –4 mA, VCC = 1.65 V 1.2
VIL = 0 V, IOH = –8 mA, VCC = 2.3 V 1.9
VIL = 0 V, IOH = –16 mA, VCC = 3 V 2.4
VIL = 0 V, IOH = –24 mA, VCC = 3 V 2.3
VIL = 0 V, IOH = –32 mA, VCC = 4.5 V 3.8
VOL Low-level output voltage VIH = VCC, IOL = 100 µA, VCC = 1.65 V to 5.5 V 0.1 V
VIH = VCC, IOL = 4 mA, VCC = 1.65 V 0.45
VIH = VCC, IOL = 8 mA, VCC = 2.3 V 0.3
VIH = VCC, IOL = 16 mA, VCC = 3 V 0.4
VIH = VCC, IOL = 24 mA, VCC = 3 V 0.55
VIH = VCC, IOL = 32 mA, VCC = 4.5 V 0.55
II Input leakage current A Input:
VI = 5.5 V or GND, VCC = 0 V to 5.5 V		 ±5 μA
ICC Supply current VI = 5.5 V or GND, IO = 0, VCC = 1.65 V to 5.5 V 10 μA
CI Input capacitance VI = VCC or GND, VCC = 3.3 V, TA = –40°C to 85°C 7 pF
(1) All typical values are at VCC = 3.3 V, TA = 25°C.

6.6 Switching Characteristics: TA = –40°C to +85°C

over recommended operating free-air temperature range (unless otherwise noted) (See Figure 2)
PARAMETER TEST CONDITIONS MIN MAX UNIT
tpd Propagation delay A-to-Y VCC = 1.8 V ± 0.15 V 1.3 5 ns
VCC = 2.5 V ± 0.2 V 1 4
VCC = 3.3 V ± 0.3 V 1.1 3.7
VCC = 5 V ± 0.5 V 1 3

6.7 Switching Characteristics: TA = –40°C to +125°C

over recommended operating free-air temperature range (unless otherwise noted) (See Figure 2)
PARAMETER TEST CONDITIONS MIN MAX UNIT
tpd Propagation delay A-to-Y VCC = 1.8 V ± 0.15 V 1.3 5.5 ns
VCC = 2.5 V ± 0.2 V 1 4.5
VCC = 3.3 V ± 0.3 V 1.1 4.2
VCC = 5 V ± 0.5 V 1 3.5

6.8 Operating Characteristics

TA = 25°C
PARAMETER TEST CONDITIONS TYP UNIT
Cpd Power dissipation capacitance f = 10 MHz VCC = 1.8 V 9 pF
VCC = 2.5 V 11
VCC = 3.3 V 13
VCC = 5 V 27

6.9 Typical Characteristic

SN74LVC1GU04 SCES215-tpdcurve.gif Figure 1. tpd vs VCC