SLRS023E December   1976  – January 2015 SN75468 , SN75469

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
      1. 9.4.1 Inductive Load Drive
      2. 9.4.2 Resistive Load Drive
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Drive Current
        2. 10.2.2.2 Output Low Voltage
        3. 10.2.2.3 Power Dissipation & Temperature
      3. 10.2.3 Application Curves
    3. 10.3 System Examples
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Related Links
    2. 13.2 Trademarks
    3. 13.3 Electrostatic Discharge Caution
    4. 13.4 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

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  • D|16
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発注情報

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCE Collector-emitter voltage 100 V
VI Input voltage(2) 30 V
Peak collector current 500 mA
IOK Output clamp current 500 mA
Total emitter-terminal current –2.5 A
TJ Operating virtual junction temperature 150 °C
Tstg Storage temperature range –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VI 0 5 V
VCC 0 100 V
TJ Junction Temperature –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) SN7546x UNIT
D
16 PINS
RθJA Junction-to-ambient thermal resistance 73 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 40.3
RθJB Junction-to-board thermal resistance 38.9
ψJT Junction-to-top characterization parameter 10.9
ψJB Junction-to-board characterization parameter 38.7
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) SN75468 SN75469 UNIT
MIN TYP MAX MIN TYP MAX
VI(on) On-state input voltage VCE = 2 V IC = 125 mA V
IC = 200 mA 2.4
IC = 250 mA 2.7
IC = 275 mA
IC = 300 mA 3
IC = 350 mA
VCE(sat) Collector-emitter saturation voltage II = 250 µA, IC = 100 mA 0.9 1.1 0.9 1.1 V
II = 350 µA, IC = 100 mA 1 1.3 1 1.3
II = 500 µA, IC = 100 mA 1.2 1.6 1.2 1.6
VF Clamp-diode forward voltage IF = 350 mA 1.7 2 1.7 2 V
ICEX collector cutoff current VCE = 100 V, II = 0 50 50 µA
VCE = 100 V,
TA = 70°C		 II = 0 100 100
VI = 1 V 500
II(off) Off-state input current VCE = 50 V, IC = 500 µA, TA = 70°C 50 65 50 65 µA
II Input current VI = 3.85 V 0.93 1.35 mA
VI = 5 V 0.35 0.5
VI = 12 V 1 1.45
IR Clamp-diode reverse current VR = 100 V 50 50 µA
VR = 100 V, TA = 70°C 100 10
Ci Input Capacitance VI = 0, f = 1 MHz 15 25 15 25 pF
(1) All electrical characteristics are measured with 0.1-µF capacitors connected at REF, CT, and VCC to GND.

7.6 Switching Characteristics

TA = 25°C free-air temperature
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
tPLH Propagation delay time, low-to-high-level output VS = 20 V, RL = 163 Ω, CL = 15 pF, See Figure 14 0.25 1 µs
tPHL Propagation delay time, high-to-low-level output 0.25 1 µs
VOH High-level output voltage after switching VS = 50 V, IO = 300 mA, See Figure 14 VS – 20 mV
(1) All switching characteristics are measured with 0.1-µF capacitors connected at REF and VCC to GND.

7.7 Typical Characteristics

tc1_slrs023.gifFigure 1. Collector-Emitter Saturation Voltage
vs
Collector Current (One Darlington)
tc3_slrs023.gifFigure 3. Output Current vs Input Current
tc5_slrs023.gifFigure 5. N Package Maximum Collector Current
vs
Duty Cycle
tc2_slrs023.gifFigure 2. Collector-Emitter Saturation Voltage
vs
Total Collector Current (Two Darlingtons in Parallel)
tc4_slrs023.gifFigure 4. D Package Maximum Collector Current
vs
Duty Cycle