SLAS624A November 2008 – November 2016 TAS5342LA
PRODUCTION DATA.
TAS5342LA is a PWM input, Class-D audio amplifier. The output of the TAS5342LA can be configured for single-ended, bridge-tied load (BTL) or parallel BTL (PBTL) output. Independent supply rails provide improved audio performance, one for audio power output (PVDD) and the other for gate drive and analog control (GVDD and VDD).
The TAS5342LA contains a protection system that safeguards the device against short circuits, overload, over-temperature, and under-voltage conditions. An error reporting system provides feedback under fault conditions.
Figure 14 shows typical connections for BTL outputs. A detailed schematic can be viewed in (TAS5342LDDV6EVM User Guide).
The TAS5342LA is compatable with the Mid Z sequence of the TAS5086 Modulator. The Mid Z Sequence is a series of pulses that is generated by the modulator. This sequence causes the power stage to slowly enable its outputs as it begins to switch.
By slowly starting the PWM switching, the impulse response created by the onset of switching is reduced. This impulse response is the acoustic artifact that is heard in the output transducers (loudspeakers) and is commonly termed "click" or "pop".
The low acoustic artifact noise of the TAS5342LA will be further decreased when used in conjunction with the TAS5086 modulator with the Mid Z Sequence enabled.
The Mid Z sequence is primarily used for the single-ended output configuration. It facilitates a "softer" PWM output start after the split cap output configuration is charged.
The TAS5342LA contains advanced protection circuitry carefully designed to facilitate system integration and ease of use, as well as to safeguard the device from permanent failure due to a wide range of fault conditions such as short circuits, overload, overtemperature, and undervoltage. The TAS5342LA responds to a fault by immediately setting the power stage in a high-impedance (Hi-Z) state and asserting the SD pin low. In situations other than overload and over-temperature error (OTE), the device automatically recovers when the fault condition has been removed, that is, the supply voltage has increased.
The device will function on errors, as shown in Table 1.
BTL MODE | PBTL MODE | SE MODE | |||
---|---|---|---|---|---|
Local Error In | Turns Off | Local Error In | Turns Off | Local Error In | Turns Off |
A | A + B | A | A + B + C + D | A | A + B |
B | B | B | |||
C | C + D | C | C | C + D | |
D | D | D |
Bootstrap UVP does not shutdown according to the table, it shutsdown the respective halfbridge.
This device requires at least 30 ns of low time on the output per 384-kHz PWM frame rate in order to keep the bootstrap capacitors charged. As an example, if the modulation index is set to 99.2% in the TAS5508, this setting allows PWM pulse durations down to 10 ns. This signal, which does not meet the 30-ns requirement, is sent to the PWM_X pin and this low-state pulse time does not allow the bootstrap capacitor to stay charged. The TAS5342LA device requires limiting the TAS5508 modulation index to 97.7% to keep the bootstrap capacitor charged under all signals and loads.
The TAS5342LA contains a bootstrap capacitor under voltage protection circuit (BST_UVP) that monitors the voltage on the bootstrap capacitors. When the voltage on the bootstrap capacitors is less than required for proper control of the High-Side MOSFETs, the device will initiate bootstrap capacitor recharge sequences until the bootstrap capacitors are properly charged for robust operation. This function may be activated with PWM pulses less than 30 nS.
Therefore, TI strongly recommends using a TI PWM processor, such as TAS5518, TAS5086 or TAS5508, with the modulation index set at 97.7% to interface with TAS5342LA.
The device has independent, fast-reacting current detectors with programmable trip threshold (OC threshold) on all high-side and low-side power-stage FETs. See the following table for OC-adjust resistor values. The detector outputs are closely monitored by two protection systems. The first protection system controls the power stage in order to prevent the output current from further increasing, that is, it performs a current-limiting function rather than prematurely shutting down during combinations of high-level music transients and extreme speaker load impedance drops. If the high-current situation persists, that is, the power stage is being overloaded, a second protection system triggers a latching shutdown, resulting in the power stage being set in the high-impedance (Hi-Z) state. Current limiting and overload protection are independent for half-bridges A and B and, respectively, C and D. That is, if the bridge-tied load between half-bridges A and B causes an overload fault, only half-bridges A and B are shut down.
Unfortunately, most inductors have decreasing inductance with increasing temperature and increasing current (saturation). To some degree, an increase in temperature naturally occurs when operating at high output currents, due to core losses and the dc resistance of the inductor copper winding. A thorough analysis of inductor saturation and thermal properties is strongly recommended.
Setting the OC threshold too low might cause issues such as lack of enough output power and/or unexpected shutdowns due to too-sensitive overload detection.
TI recommends following the external component selection and PCB layout as given in the Application and Implementation section.
For added flexibility, the OC threshold is programmable within a limited range using a single external resistor connected between the OC_ADJ pin and AGND. (See the Electrical Characteristics section of this data sheet for information on the correlation between programming-resistor value and the OC threshold.) It should be noted that a properly functioning overcurrent detector assumes the presence of a properly designed demodulation filter at the power-stage output. Short-circuit protection is not provided directly at the output pins of the power stage but only on the speaker terminals (after the demodulation filter). It is required to follow certain guidelines when selecting the OC threshold and an appropriate demodulation inductor:
OC-Adjust Resistor Values (kΩ) | Max. Current Before OC Occurs (A), TC=75°C |
---|---|
22 | 8.4 A |
33 | 6.8 A |
47 | 5.3 A |
The reported maximum peak current in the table above is measured with continuous current in 1 Ω, one channel active and the other one muted.
The PPSC detection system protects the device from permanent damage in the case that a power output pin (OUT_X) is shorted to GND_X or PVDD_X. For comparison the OC protection system detects an over current after the demodulation filter where PPSC detects shorts directly at the pin before the filter. PPSC detection is performed at startup, that is, when VDD is supplied, consequently a short to either GND_X or PVDD_X after system startup will not activate the PPSC detection system. When PPSC detection is activated by a short on the output, all half bridges are kept in a Hi-Z state until the short is removed, the device then continues the startup sequence and starts switching. The detection is controlled globally by a two step sequence. The first step ensures that there are no shorts from OUT_X to GND_X, the second step tests that there are no shorts from OUT_X to PVDD_X. The total duration of this process is roughly proportional to the capacitance of the output LC filter. The typical duration is < 15 ms/μF. While the PPSC detection is in progress, SD is kept low, and the device will not react to changes applied to the RESET pins. If no shorts are present the PPSC detection passes, and SD is released. A device reset will not start a new PPSC detection. PPSC detection is enabled in BTL and PBTL output configurations, the detection is not performed in SE mode. To make sure not to trip the PPSC detection system it is recommended not to insert resistive load to GND_X or PVDD_X.
The TAS5342LA has a two-level temperature-protection system that asserts an active-low warning signal (OTW) when the device junction temperature exceeds 125°C (nominal) and, if the device junction temperature exceeds 155°C (nominal), the device is put into thermal shutdown, resulting in all half-bridge outputs being set in the high-impedance (Hi-Z) state and SD being asserted low. OTE is latched in this case. To clear the OTE latch, either RESET_AB or RESET_CD must be asserted. Thereafter, the device resumes normal operation.
The UVP and POR circuits of the TAS5342LA fully protect the device in any power-up or down and brownout situation. While powering up, the POR circuit resets the overload circuit (OLP) and ensures that all circuits are fully operational when the GVDD_X and VDD supply voltages reach stated in the Electrical Characteristics table. Although GVDD_X and VDD are independently monitored, a supply voltage drop below the UVP threshold on any VDD or GVDD_X pin results in all half-bridge outputs immediately being set in the high-impedance (Hi-Z) state and SD being asserted low. The device automatically resumes operation when all supply voltages have increased above the UVP threshold.
The SD and OTW pins are both active-low, open-drain outputs. Their function is for protection-mode signaling to a PWM controller or other system-control device.
Any fault resulting in device shutdown is signaled by the SD pin going low. Likewise, OTW goes low when the device junction temperature exceeds 125°C (see Table 3).
SD | OTW | DESCRIPTION |
---|---|---|
0 | 0 | Overtemperature (OTE) or overload (OLP) or undervoltage (UVP) |
0 | 1 | Overload (OLP) or undervoltage (UVP) |
1 | 0 | Junction temperature higher than 125°C (overtemperature warning) |
1 | 1 | Junction temperature lower than 125°C and no OLP or UVP faults (normal operation) |
Note that asserting either RESET_AB or RESET_CD low forces the SD signal high, independent of faults being present. TI recommends monitoring the OTW signal using the system microcontroller and responding to an overtemperature warning signal by, for example, turning down the volume to prevent further heating of the device resulting in device shutdown (OTE).
To reduce external component count, an internal pullup resistor to 3.3 V is provided on both SD and OTW outputs. Level compliance for 5-V logic can be obtained by adding external pullup resistors to 5 V (see the Electrical Characteristics section of this data sheet for further specifications).
Two reset pins are provided for independent control of half-bridges A/B and C/D. When RESET_AB is asserted low, all four power-stage FETs in half-bridges A and B are forced into a high-impedance (Hi-Z) state. Likewise, asserting RESET_CD low forces all four power-stage FETs in half-bridges C and D into a high-impedance state. Thus, both reset pins are well suited for hard-muting the power stage if needed.
In BTL modes, to accommodate bootstrap charging prior to switching start, asserting the reset inputs low enables weak pulldown of the half-bridge outputs. In the SE mode, the weak pulldowns are not enabled, and it is therefore recommended to ensure bootstrap capacitor charging by providing a low pulse on the PWM inputs when reset is asserted high.
Asserting either reset input low removes any fault information to be signalled on the SD output, that is, SD is forced high.
A rising-edge transition on either reset input allows the device to resume operation after an overload fault. To ensure thermal reliability, the rising edge of reset must occur no sooner than 4 ms after the falling edge of SD.
Protection modes are selected by shorting M1, M2, and M3 to VREG or GND.
MODE PINS | MODE NAME | PWM INPUT (1) | DESCRIPTION | ||
---|---|---|---|---|---|
M3 | M2 | M1 | |||
0 | 0 | 0 | BTL mode 1 | 2N | All protection systems enabled |
0 | 0 | 1 | BTL mode 2 | 2N | Latching shutdown on, PWM activity detector and OLP disabled |
0 | 1 | 0 | BTL mode 3 | 1N | All protection systems enabled |
0 | 1 | 1 | PBTL mode | 1N / 2N (2) | All protection systems enabled |
1 | 0 | 0 | SE mode 1 | 1N | All protection systems enabled (3) |
1 | 0 | 1 | SE mode 2 | 1N | Latching shutdown on, PWM activity detector and OLP disabled (3) |
1 | 1 | 0 | Reserved | ||
1 | 1 | 1 |
The TAS5342LA does not require a power-up sequence. The outputs of the H-bridges remain in a high-impedance state until the gate-drive supply voltage (GVDD_X) and VDD voltage are above the undervoltage protection (UVP) voltage threshold (see the Electrical Characteristics section of this data sheet). Although not specifically required, it is recommended to hold RESET_AB and RESET_CD in a low state while powering up the device. This allows an internal circuit to charge the external bootstrap capacitors by enabling a weak pulldown of the half-bridge output.
When the TAS5342LA is being used with TI PWM modulators such as the TAS5518, no special attention to the state of RESET_AB and RESET_CD is required, provided that the chipset is configured as recommended.
The TAS5342LA does not require a power-down sequence. The device remains fully operational as long as the gate-drive supply (GVDD_X) voltage and VDD voltage are above the undervoltage protection (UVP) voltage threshold (see the Electrical Characteristics section of this data sheet). Although not specifically required, it is a good practice to hold RESET_AB and RESET_CD low during power down, thus preventing audible artifacts including pops or clicks.
When the TAS5342LA is being used with TI PWM modulators such as the TAS5518, no special attention to the state of RESET_AB and RESET_CD is required, provided that the chipset is configured as recommended.