SLOS903B May   2015  – February 2016 TAS5720L , TAS5720M

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Adjustable I2C Address
      2. 7.3.2 I2C Interface
        1. 7.3.2.1 Writing to the I2C Interface
        2. 7.3.2.2 Reading from the I2C Interface
      3. 7.3.3 Serial Audio Interface (SAIF)
        1. 7.3.3.1 Stereo I2S Format Timing
        2. 7.3.3.2 Stereo Left-Justified Format Timing
        3. 7.3.3.3 Stereo Right-Justified Format Timing
        4. 7.3.3.4 TDM Format Timing
      4. 7.3.4 Audio Signal Path
        1. 7.3.4.1 High-Pass Filter (HPF)
        2. 7.3.4.2 Amplifier Analog Gain and Digital Volume Control
        3. 7.3.4.3 Digital Clipper
        4. 7.3.4.4 Class-D Amplifier Settings
    4. 7.4 Device Functional Modes
      1. 7.4.1 Shutdown Mode (SDZ)
      2. 7.4.2 Sleep Mode
      3. 7.4.3 Active Mode
      4. 7.4.4 Mute Mode
      5. 7.4.5 Faults and Status
    5. 7.5 Register Maps
      1. 7.5.1 Device Identification
      2. 7.5.2 Power Control Register
      3. 7.5.3 Digital Control Register 1
      4. 7.5.4 Digital Control Register 2
      5. 7.5.5 Volume Control Register
      6. 7.5.6 Analog Control Register
      7. 7.5.7 Fault Configuration and Error Status Register
      8. 7.5.8 Digital Clipper 2
      9. 7.5.9 Digital Clipper 1
  8. 8 Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Design Procedure
        1. 8.2.2.1 Overview
        2. 8.2.2.2 Select the PWM Frequency
        3. 8.2.2.3 Select the Amplifier Gain and Digital Volume Control
        4. 8.2.2.4 Select Input Capacitance
        5. 8.2.2.5 Select Decoupling Capacitors
        6. 8.2.2.6 Select Bootstrap Capacitors
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Links
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

11 Device and Documentation Support

11.1 Documentation Support

11.1.1 Related Links

The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy.

Table 19. Related Links

PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY
TAS5720L Click here Click here Click here Click here Click here
TAS5720M Click here Click here Click here Click here Click here

11.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.3 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.4 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.5 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.