SLASEA5C March   2016  – May 2017 TAS5753MD

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Characteristics
    5. 6.5  Electrical Characteristics
    6. 6.6  Speaker Amplifier Characteristics in All Modes
    7. 6.7  Speaker Amplifier Characteristics in Stereo Bridge Tied Load (BTL) Mode
    8. 6.8  Speaker Amplifier Characteristics in Stereo Post-Filter Parallel Bridge Tied Load (Post-Filter PBTL) Mode
    9. 6.9  Headphone Amplifier and Line Driver Characteristics
    10. 6.10 Protection Circuitry Characteristics
    11. 6.11 I²C Interface Timing Requirements
    12. 6.12 Serial Audio Port Timing Requirements
    13. 6.13 Typical Electrical Power Consumption
    14. 6.14 Typical Characteristics
      1. 6.14.1 Typical Characteristics - BTL Mode
      2. 6.14.2 Typical Characteristics - PBTL Mode
      3. 6.14.3 Typical Characteristics - Headphone Amplifier
      4. 6.14.4 Typical Characteristics - Line Driver
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Audio Signal Processing Overview
    4. 7.4 Feature Description
      1. 7.4.1 Clock, Autodetection, and PLL
      2. 7.4.2 PWM Section
      3. 7.4.3 PWM Level Meter
      4. 7.4.4 Automatic Gain Limiter (AGL)
      5. 7.4.5 Headphone/Line Amplifier
      6. 7.4.6 Fault Indication
      7. 7.4.7 SSTIMER Pin Functionality
      8. 7.4.8 Device Protection System
        1. 7.4.8.1 Overcurrent (OC) Protection With Current Limiting
        2. 7.4.8.2 Overtemperature Protection
        3. 7.4.8.3 Undervoltage Protection (UVP) and Power-On Reset (POR)
    5. 7.5 Device Functional Modes
      1. 7.5.1 Serial Audio Port Operating Modes
      2. 7.5.2 Communication Port Operating Modes
      3. 7.5.3 Speaker Amplifier Modes
        1. 7.5.3.1 Stereo Mode
        2. 7.5.3.2 Mono Mode
    6. 7.6 Programming
      1. 7.6.1 I²C Serial Control Interface
        1. 7.6.1.1 General I²C Operation
        2. 7.6.1.2 I²C Slave Address
          1. 7.6.1.2.1 I²C Device Address Change Procedure
        3. 7.6.1.3 Single- and Multiple-Byte Transfers
        4. 7.6.1.4 Single-Byte Write
        5. 7.6.1.5 Multiple-Byte Write
        6. 7.6.1.6 Single-Byte Read
        7. 7.6.1.7 Multiple-Byte Read
      2. 7.6.2 Serial Interface Control and Timing
        1. 7.6.2.1 Serial Data Interface
        2. 7.6.2.2 I²S Timing
        3. 7.6.2.3 Left-Justified
        4. 7.6.2.4 Right-Justified
      3. 7.6.3 26-Bit 3.23 Number Format
    7. 7.7 Register Maps
      1. 7.7.1 Register Summary
      2. 7.7.2 Detailed Register Descriptions
        1. 7.7.2.1  Clock Control Register (0x00)
        2. 7.7.2.2  Device ID Register (0x01)
        3. 7.7.2.3  Error Status Register (0x02)
        4. 7.7.2.4  System Control Register 1 (0x03)
        5. 7.7.2.5  Serial Data Interface Register (0x04)
        6. 7.7.2.6  System Control Register 2 (0x05)
        7. 7.7.2.7  Soft Mute Register (0x06)
        8. 7.7.2.8  Volume Registers (0x07, 0x08, 0x09)
        9. 7.7.2.9  Volume Configuration Register (0x0E)
        10. 7.7.2.10 Modulation Limit Register (0x10)
        11. 7.7.2.11 Interchannel Delay Registers (0x11, 0x12, 0x13, and 0x14)
        12. 7.7.2.12 PWM Shutdown Group Register (0x19)
        13. 7.7.2.13 Start/Stop Period Register (0x1A)
        14. 7.7.2.14 Oscillator Trim Register (0x1B)
        15. 7.7.2.15 BKND_ERR Register (0x1C)
        16. 7.7.2.16 Input Multiplexer Register (0x20)
        17. 7.7.2.17 PWM Output MUX Register (0x25)
        18. 7.7.2.18 AGL Control Register (0x46)
        19. 7.7.2.19 PWM Switching Rate Control Register (0x4F)
        20. 7.7.2.20 Bank Switch and EQ Control (0x50)
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 External Component Selection Criteria
        1. 8.1.1.1 Component Selection Impact on Board Layout, Component Placement, and Trace Routing
        2. 8.1.1.2 Amplifier Output Filtering
    2. 8.2 Typical Applications
      1. 8.2.1 Stereo Bridge Tied Load Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Component Selection and Hardware Connections
          2. 8.2.1.2.2 Control and Software Integration
          3. 8.2.1.2.3 I²C Pullup Resistors
          4. 8.2.1.2.4 Digital I/O Connectivity
          5. 8.2.1.2.5 Recommended Startup and Shutdown Procedures
            1. 8.2.1.2.5.1 Start-Up Sequence
            2. 8.2.1.2.5.2 Normal Operation
            3. 8.2.1.2.5.3 Shutdown Sequence
            4. 8.2.1.2.5.4 Power-Down Sequence
        3. 8.2.1.3 Application Performance Plots
      2. 8.2.2 Mono Parallel Bridge Tied Load Application
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Performance Plots
      3. 8.2.3 Stereo BTL Configuration with Headphone and Line Driver Amplifier Application
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Performance Plots
      4. 8.2.4 Mono Parallel Bridge-Tied Load Configuration with Headphone and Line Driver Amplifier
        1. 8.2.4.1 Design Requirements
        2. 8.2.4.2 Detailed Design Procedure
        3. 8.2.4.3 Application Performance Plots
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Decoupling Capacitors
      2. 10.1.2 Thermal Performance and Grounding
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Device and Documentation Support

Community Resources

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Trademarks

PowerPAD, E2E are trademarks of Texas Instruments.

Directpath is a trademark of TI.

Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

Glossary

SLYZ022TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.