JAJSE41G June 2016 – March 2019 TDA3LA , TDA3LX , TDA3MA , TDA3MD , TDA3MV
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
Table 5-7 summarizes the DC electrical characteristics for Dual Voltage LVCMOS I2C Buffers.
NOTE
For more information on the I/O cell configurations, see the Control Module section of the Device TRM.
PARAMETER | MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|---|
Signal Names in MUXMODE 0: i2c2_scl; i2c1_scl; i2c1_sda; i2c2_sda; | ||||||
Balls ABF: L3, L4, L6, L5; | ||||||
I2C Standard Mode – 1.8 V | ||||||
VIH | Input high-level threshold | 0.7×VDDS | V | |||
VIL | Input low-level threshold | 0.3×VDDS | V | |||
Vhys | Hysteresis | 0.1×VDDS | V | |||
II | Input current at each I/O pin with an input voltage between 0.1×VDDS to 0.9×VDDS | 12 | µA | |||
IOZ | IOZ(IPAD Current) at each IO pin. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ | 12 | µA | |||
CI | Input capacitance | 10 | pF | |||
VOL3 | Output low-level threshold open-drain at 3-mA sink current | 0.2×VDDS | V | |||
IOLmin | Low-level output current @VOL=0.2×VDDS | 3 | mA | |||
tOF | Output fall time from VIHmin to VILmax with a bus capacitance CB from 5 pF to 400 pF | 250 | ns | |||
I2C Fast Mode – 1.8 V | ||||||
VIH | Input high-level threshold | 0.7×VDDS | V | |||
VIL | Input low-level threshold | 0.3×VDDS | V | |||
Vhys | Hysteresis | 0.1×VDDS | V | |||
II | Input current at each I/O pin with an input voltage between 0.1×VDDS to 0.9×VDDS | 12 | µA | |||
IOZ | IOZ(IPAD Current) at each IO pin. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ | 12 | µA | |||
CI | Input capacitance | 10 | pF | |||
VOL3 | Output low-level threshold open-drain at 3-mA sink current | 0.2×VDDS | V | |||
IOLmin | Low-level output current @VOL=0.2×VDDS | 3 | mA | |||
tOF | Output fall time from VIHmin to VILmax with a bus capacitance CB from 10 pF to 400 pF | 20+0.1×Cb | 250 | ns | ||
I2C Standard Mode – 3.3 V | ||||||
VIH | Input high-level threshold | 0.7×VDDS | V | |||
VIL | Input low-level threshold | 0.3×VDDS | V | |||
Vhys | Hysteresis | 0.05×VDDS | V | |||
II | Input current at each I/O pin with an input voltage between 0.1×VDDS to 0.9×VDDS | 31 | 80 | µA | ||
IOZ | IOZ(IPAD Current) at each IO pin. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ | 31 | 80 | µA | ||
CI | Input capacitance | 10 | pF | |||
VOL3 | Output low-level threshold open-drain at 3-mA sink current | 0.4 | V | |||
IOLmin | Low-level output current @VOL=0.4V | 3 | mA | |||
IOLmin | Low-level output current @VOL=0.6V for full drive load (400pF/400KHz) | 6 | mA | |||
tOF | Output fall time from VIHmin to VILmax with a bus capacitance CB from 5 pF to 400 pF | 250 | ns | |||
I2C Fast Mode – 3.3 V | ||||||
VIH | Input high-level threshold | 0.7×VDDS | V | |||
VIL | Input low-level threshold | 0.3×VDDS | V | |||
Vhys | Hysteresis | 0.05×VDDS | V | |||
II | Input current at each I/O pin with an input voltage between 0.1×VDDS to 0.9×VDDS | 31 | 80 | µA | ||
IOZ | IOZ(IPAD Current) at each IO pin. PAD is swept from 0 to VDDS and the Max(I(PAD)) is measured and is reported as IOZ | 31 | 80 | µA | ||
CI | Input capacitance | 10 | pF | |||
VOL3 | Output low-level threshold open-drain at 3-mA sink current | 0.4 | V | |||
IOLmin | Low-level output current @VOL=0.4V | 3 | mA | |||
IOLmin | Low-level output current @VOL=0.6V for full drive load (400pF/400KHz) | 6 | mA | |||
tOF | Output fall time from VIHmin to VILmax with a bus capacitance CB from 10 pF to 200 pF (Proper External Resistor Value should be used as per I2C spec) | 20+0.1×Cb | 250 | ns | ||
Output fall time from VIHmin to VILmax with a bus capacitance CB from 300 pF to 400 pF (Proper External Resistor Value should be used as per I2C spec) | 40 | 290 |