SNLS766 July   2024 TDP20MB421

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 DC Electrical Characteristics
    6. 5.6 High-Speed Electrical Characteristics
    7. 5.7 SMBUS/I2C Timing Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 5-Level Control Inputs
      2. 6.3.2 Linear Equalization
      3. 6.3.3 Flat Gain
    4. 6.4 Device Functional Modes
      1. 6.4.1 Active Mode
      2. 6.4.2 Standby Mode
    5. 6.5 Programming
      1. 6.5.1 Pin Mode
      2. 6.5.2 SMBUS/I2C Register Control Interface
        1. 6.5.2.1 Shared Registers
        2. 6.5.2.2 Channel Registers
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 DP 2.1 Mainlink Signal Conditioning
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.4 Electrostatic Discharge Caution

TDP20MB421 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.