JAJSN62C february   2004  – april 2023 TLV3011 , TLV3011B , TLV3012 , TLV3012B

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings- TLV3011 and TLV3012
    2. 6.2  Absolute Maximum Ratings - TLV3011B and TLV3012B
    3. 6.3  ESD Ratings
    4. 6.4  Thermal Information - TLV3011 and TLV3012
    5. 6.5  Thermal Information- TLV3011B and TLV3012B
    6. 6.6  Recommended Operating Conditions
    7. 6.7  Electrical Characteristics - TLV3011 and TLV3012
    8. 6.8  Switching Characteristics - TLV3011 and TLV3012
    9. 6.9  Electrical Characteristics - TLV3011B and TLV3012B
    10. 6.10 Switching Characteristics - TLV3011B and TLV3012B
  7. 7 Typical Characteristics - TLV3011 and TLV3012
  8. 8 Typical Characteristics - TLV3011B and TLV3012B
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
      1. 9.4.1 Open Drain Output (TLV3011 and TLV3011B)
      2. 9.4.2 Push-Pull Output (TLV3012 and TLV3012B)
      3. 9.4.3 Voltage Reference
      4. 9.4.4 TLV3011B and TLV3012B Fail-Safe inputs
      5. 9.4.5 TLV3011B and TLV3012B Power On Reset
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 External Hysteresis
      2. 10.1.2 TLV3011B and TLV3012B Hysteresis
    2. 10.2 Typical Application
      1. 10.2.1 Under-Voltage Detection
        1. 10.2.1.1 Design Requirements
        2. 10.2.1.2 Detailed Design Procedure
        3. 10.2.1.3 Application Curve
    3. 10.3 System Examples
      1. 10.3.1 Power-On Reset
      2. 10.3.2 Relaxation Oscillator
    4. 10.4 Power Supply Recommendations
    5. 10.5 Layout
      1. 10.5.1 Layout Guidelines
      2. 10.5.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 ドキュメントの更新通知を受け取る方法
    2. 11.2 サポート・リソース
    3. 11.3 Trademarks
    4. 11.4 静電気放電に関する注意事項
    5. 11.5 用語集
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.9 Electrical Characteristics - TLV3011B and TLV3012B

For VS (TOTAL SUPPLY VOLTAGE) = (V+) – (V–) = 1.8V and 5.5V,  VCM = VS /2 at TA = 25°C (Unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage VCM = (V–) –6 ±0.3 6 mV
VOS Input offset voltage VCM = (V–)
TA = –40°C to +125°C		 –9 9 mV
dVIO/dT Input offset voltage drift VCM = (V–)
TA = –40°C to +125°C		 ±12 µV/°C
PSRR power supply rejection ratio VCM = (V–)
VS = 1.65 V to 5.5 V
TA = –40°C to +125°C		 100 1000 µV/V
VHYS Input hysteresis voltage TA = –40°C to +125°C 2 6 8 mV
INPUT BIAS CURRENT
IB Input bias current VCM =  VS /2  –10(1) ±4.5 10(1) pA
IOS Input offset current VCM =  VS /2  –10(1) ±1 10(1) pA
INPUT COMMON MODE RANGE
VCM-Range Common-mode voltage range VS = 1.8 V to 5.5 V (V–) – 0.2 (V+) + 0.2 V
CMRR Common mode rejection ratio VCM = (V–) + 1.5V to (V+) + 0.2V
VS = 5.5 V		 60 74 dB
CMRR Common mode rejection ratio VCM = (V–) - 0.2V to (V+) + 0.2V
VS = 5.5 V		 54 62 dB
RCM Input Common Mode Resistance 1013 Ω
CIC Input Common Mode Capacitance 2 pF
INPUT IMPEDANCE
RDM Input Differential Mode Resistance 1013 Ω
CID Input Differential Mode  Capacitance 4 pF
OUTPUT
VOL Voltage swing from (V–) VS = 5 V
ISINK = 5 mA
TA = –40°C to +125°C		 160 200 mV
VOH Voltage swing from (V+) (for Push-Pull only) VS = 5 V
ISOURCE = 5 mA
TA = –40°C to +125°C		 90 200 mV
VOLTAGE REFERENCE
VOUT Reference Voltage 1.223 1.242 1.260 V
Accuracy ±0.25% ±1.5%
dVOUT/dT Temperature Drift TA = –40°C to +125°C 40 100 ppm/℃
dVOUT/dILOAD Load Regulation, Sourcing 0 mA < ISOURCE ≤ 0.5 mA 0.36 1(1) mV/mA
Load Regulation, Sinking 0 mA < ISINK ≤ 0.5 mA 6.6
mV/mA
ILOAD Output Current 0.5 mA
dVOUT/dVS Line Regulation 1.65 V ≤ VS ≤ 5.5 V 10 100(1) µV/V
Vnoise Noise f = 0.1 Hz to 10 Hz 0.2 mVPP
POWER SUPPLY
IQ Quiescent current per comparator  Output is logic high 2.4 3.1 µA
IQ Quiescent current per comparator  Output is logic high
TA = –40°C to +125°C		 3.6 µA
(1) Ensured by characterization