SNOSDK2 June   2024 TLV3231-Q1

ADVANCE INFORMATION  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
    1.     Pin Configurations: TLV3231 and TLV3232
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagrams
    3. 6.3 Feature Description
    4. 6.4 Device Functional Modes
      1. 6.4.1 Inputs
        1. 6.4.1.1 Unused Inputs
      2. 6.4.2 Internal Hysteresis
      3. 6.4.3 Outputs
      4. 6.4.4 ESD Protection
      5. 6.4.5 Power-On Reset (POR)
  8. Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Basic Comparator Definitions
        1. 7.1.1.1 Operation
        2. 7.1.1.2 Propagation Delay
        3. 7.1.1.3 Overdrive Voltage
      2. 7.1.2 Hysteresis
        1. 7.1.2.1 Inverting Comparator With Hysteresis
        2. 7.1.2.2 Non-Inverting Comparator With Hysteresis
    2. 7.2 Typical Applications
      1. 7.2.1 Low-Side Current Sensing
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Electrostatic Discharge Caution

TLV3231-Q1 TLV3232-Q1 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.