SLVSA61 Data sheet

SLVSA61H February 2010 – August 2016

PRODUCTION DATA.

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）

DCK|5
- MPDS025J

サーマルパッド・メカニカル・データ

発注情報

6 Specifications

6.1 Absolute Maximum Ratings

At T_A = –40°C to 125°C (unless otherwise noted). All voltages are with respect to GND.⁽¹⁾

		MIN	MAX	UNIT
V_IN	Input voltage	–0.3	6	V
V_EN	Enable voltage	–0.3	6	V
V_OUT	Output voltage	–0.3	6	V
I_OUT	Maximum output current	Internally limited
	Output short-circuit duration	Indefinite
T_J	Operating ambient temperature	–40	150	°C
T_stg	Storage temperature	–55	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per AEC Q100-011	±750	V

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_IN	Input supply-voltage range	2	5.5	V
V_OUT	Output voltage	1.2	4.8	V
I_OUT	Oytput current	0	200	mA
V_EN	Voltage on EN pin	0	V_IN	V
T_A	Operating ambient temperature	–40	125	°C

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TLV700xx-Q1		UNIT
		DCK (SOT)	DDC (SOT)
		5 Pins	5 PINS
R_θJA	Junction-to-ambient thermal resistance	307.6	262.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	79.1	68.2	°C/W
R_θJB	Junction-to-board thermal resistance	93.7	81.6	°C/W
ψ_JT	Junction-to-top characterization parameter	1.3	1.1	°C/W
ψ_JB	Junction-to-board characterization parameter	92.8	80.9	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	n/a	n/a	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

V_IN = V_OUT(TYP) + 0.3 V or 2 V (whichever is greater); I_OUT = 10 mA, V_EN = V_IN, C_OUT = 1 μF, and T_A = –40°C to 125°C (unless otherwise noted). Typical values are at T_A = 25°C.

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
V_OUT	DC output accuracy	–40°C ≤ T_A ≤ 125°C	V_OUT ≥ 1 V	–2%		2%
V_OUT	DC output accuracy	–40°C ≤ T_A ≤ 125°C	V_OUT < 1 V	–20		20	mV
ΔV_O / ΔV_IN	Line regulation	V_OUT(NOM) + 0.5 V ≤ V_IN ≤ 5.5 V I_OUT = 10 mA			1	5	mV
ΔV_O / ΔI_OUT	Load regulation	0 mA ≤ I_OUT ≤ 200 mA, TLV70025-Q1 TLV70030-Q1, TLV70033-Q1				15	mV
ΔV_O / ΔI_OUT	Load regulation	0 mA ≤ I_OUT ≤ 200 mA, TLV70012A-Q1				20	mV
V_DO	Dropout voltage⁽¹⁾	V_IN = 0.98 × V_OUT(NOM), I_OUT = 200 mA			175	250	mV
I_CL	Output current limit	V_OUT = 0.9 × V_OUT(NOM)		220	350	550	mA
I_GND	Ground pin current	I_OUT = 0 mA			31	55	μA
I_GND	Ground pin current	I_OUT = 200 mA, V_IN = V_OUT + 0.5 V			270		μA
I_SHDN	Ground pin current (shutdown)	V_EN ≤ 0.4 V, 2 V ≤ V_IN ≤ 4.5 V			1	2.5	μA
PSRR	Power-supply rejection ratio	V_IN = 2.3 V, V_OUT = 1.8 V I_OUT = 10 mA, f = 1 kHz			68		dB
V_N	Output noise voltage	BW = 100 Hz to 100 kHz V_IN = 2.3 V, V_OUT = 1.8 V, I_OUT = 10 mA			48		μV_RMS
t_STR	Startup time⁽²⁾	C_OUT = 1 μF, I_OUT = 200 mA			100		μs
V_EN(HI)	Enable pin high (enabled)			0.9		V_IN	V
V_EN(LO)	Enable pin low (disabled)			0		0.4	V
I_EN	Enable pin current	V_EN = 5.5 V , I_OUT = 10 μA			0.04	0.5	μA
UVLO	Undervoltage lockout	V_IN rising			1.9		V
T_SD	Thermal shutdown temperature	Shutdown, temperature increasing			160		°C
T_SD	Thermal shutdown temperature	Reset, temperature decreasing			140		°C
T_A	Operating ambient temperature			–40		125	°C

(1) V_DO is measured for devices with V_OUT(NOM) ≥ 2.35 V.

(2) Startup time = time from EN assertion to 0.98 × V_OUT(NOM).

6.6 Typical Characteristics

T_J = –40°C to 125°C, V_IN = V_OUT(TYP) + 0.5 V or 2 V (whichever is greater); I_OUT = 10 mA, V_EN = V_IN, C_OUT = 1 μF (unless otherwise noted). Typical values are at T_J = 25°C.