JAJSMY7 April   2022 TLVM13660

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 System Characteristics
    7. 7.7 Typical Characteristics
    8. 7.8 Typical Characteristics (VIN = 12 V)
    9. 7.9 Typical Characteristics (VIN = 24 V)
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Voltage Range (VIN1, VIN2)
      2. 8.3.2  Adjustable Output Voltage (FB)
      3. 8.3.3  Input Capacitors
      4. 8.3.4  Output Capacitors
      5. 8.3.5  Switching Frequency (RT)
      6. 8.3.6  Precision Enable and Input Voltage UVLO (EN)
      7. 8.3.7  Power Good Monitor (PG)
      8. 8.3.8  Adjustable Switch-Node Slew Rate (RBOOT, CBOOT)
      9. 8.3.9  Bias Supply Regulator (VCC, VLDOIN)
      10. 8.3.10 Overcurrent Protection (OCP)
      11. 8.3.11 Thermal Shutdown
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Standby Mode
      3. 8.4.3 Active Mode
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Design 1 – High-Efficiency 6-A Synchronous Buck Regulator for Industrial Applications
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Custom Design With WEBENCH® Tools
          2. 9.2.1.2.2 Output Voltage Setpoint
          3. 9.2.1.2.3 Switching Frequency Selection
          4. 9.2.1.2.4 Input Capacitor Selection
          5. 9.2.1.2.5 Output Capacitor Selection
          6. 9.2.1.2.6 Other Connections
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Design 2 – Inverting Buck-Boost Regulator with Negative Output Voltage
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Output Voltage Setpoint
          2. 9.2.2.2.2 IBB Maximum Output Current
          3. 9.2.2.2.3 Switching Frequency Selection
          4. 9.2.2.2.4 Input Capacitor Selection
          5. 9.2.2.2.5 Output Capacitor Selection
          6. 9.2.2.2.6 Other Considerations
        3. 9.2.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Thermal Design and Layout
    2. 11.2 Layout Example
      1. 11.2.1 Package Specifications
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Third-Party Products Disclaimer
      2. 12.1.2 Development Support
        1. 12.1.2.1 Custom Design With WEBENCH® Tools
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 サポート・リソース
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.4 Thermal Information

THERMAL METRIC(1) RDL (QFN) UNIT
20 PINS
RθJA Junction-to-ambient thermal resistance (TLVM13660 EVM) 22.6 °C/W
RθJA Junction-to-ambient thermal resistance (2) 33.1 °C/W
ψJT Junction-to-top characterization parameter (3) 1 °C/W
ψJB Junction-to-board characterization parameter (4) 12.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) The junction-to-ambient thermal resistance, RθJA, applies to devices soldered directly to a 75-mm × 75-mm four-layer PCB with 2 oz. copper and natural convection cooling. Additional airflow and PCB copper area reduces RθJA. 
(3) The junction-to-top board characterization parameter, ψJT, estimates the junction temperature, TJ, of a device in a real system, using a procedure described in JESD51-2A (section 6 and 7). TJ = ψJT × PDIS + TT; where PDIS is the power dissipated in the device and TT is the temperature of the top of the device.
(4) The junction-to-board characterization parameter, ψJB, estimates the junction temperature, TJ, of a device in a real system, using a procedure described in JESD51-2A (sections 6 and 7). TJ = ψJB × PDIS + TB; where PDIS is the power dissipated in the device and TB is the temperature of the board 1mm from the device.