JAJSHX1B September   2019  – July 2021 TMCS1100

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Typical Characteristics
      1. 7.10.1 Insulation Characteristics Curves
  8. 8 Parameter Measurement Information
    1. 8.1 Accuracy Parameters
      1. 8.1.1 Sensitivity Error
      2. 8.1.2 Offset Error and Offset Error Drift
      3. 8.1.3 Nonlinearity Error
      4. 8.1.4 Power Supply Rejection Ratio
      5. 8.1.5 Common-Mode Rejection Ratio
      6. 8.1.6 Reference Voltage Rejection Ratio
      7. 8.1.7 External Magnetic Field Errors
    2. 8.2 Transient Response Parameters
      1. 8.2.1 Slew Rate
      2. 8.2.2 Propagation Delay and Response Time
      3. 8.2.3 Current Overload Parameters
      4. 8.2.4 CMTI, Common-Mode Transient Immunity
    3. 8.3 Safe Operating Area
      1. 8.3.1 Continuous DC or Sinusoidal AC Current
      2. 8.3.2 Repetitive Pulsed Current SOA
      3. 8.3.3 Single Event Current Capability
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Current Input
      2. 9.3.2 Input Isolation
      3. 9.3.3 High-Precision Signal Chain
        1. 9.3.3.1 Temperature Stability
        2. 9.3.3.2 Lifetime and Environmental Stability
        3. 9.3.3.3 Frequency Response
        4. 9.3.3.4 Transient Response
      4. 9.3.4 External Reference Voltage Input
      5. 9.3.5 Current-Sensing Measurable Ranges
    4. 9.4 Device Functional Modes
      1. 9.4.1 Power-Down Behavior
  10. 10Application and Implementation
    1. 10.1 Application Information
      1. 10.1.1 Total Error Calculation Examples
        1. 10.1.1.1 Room Temperature Error Calculations
        2. 10.1.1.2 Full Temperature Range Error Calculations
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curve
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
      1. 13.1.1 Development Support
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 サポート・リソース
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

9.3.5 Current-Sensing Measurable Ranges

The TMCS1100 can be configured to allow for bidirectional or unidirectional measurable current ranges based on the external voltage on the VREF pin. The output voltage is limited by VOUT swing to either supply or ground. Linear output swing range to both VS and GND is calculated by equations Equation 16 and Equation 17.

Equation 16. VOUT,max = VS – SwingVS
Equation 17. VOUT,min = SwingGND

Rearranging the transfer function of the device to solve for input current, and substituting VOUT,max and VOUT,min yields the maximum and minimum measurable input current ranges as shown in Equation 18 and Equation 19.

Equation 18. IIN,MAX+ = (VOUT,max – VREF) / S
Equation 19. IIN,MAX- = (VREF – VOUT,min) / S

where

  • IIN,MAX+ is the maximum linear measurable positive input current.
  • IIN,MAX- is the maximum linear measurable negative input current.
  • S is the sensitivity of the device variant.

Setting VREF to the middle of the output swing range provides bidirectional measurement capability, whereas setting VREF close to the ground provides a unidirectional measurement. Custom ranges with nonuniform positive and negative input current ranges can be achieved by appropriately scaling the VREF potential relative to the full output voltage range.