JAJSQR0B July   2023  – December 2024 TMCS1123

PRODUCTION DATA  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. Device Comparison
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Insulation Specifications
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  8. Parameter Measurement Information
    1. 7.1 Accuracy Parameters
      1. 7.1.1 Sensitivity Error
      2. 7.1.2 Offset Error and Offset Error Drift
      3. 7.1.3 Nonlinearity Error
      4. 7.1.4 Power Supply Rejection Ratio
      5. 7.1.5 Common-Mode Rejection Ratio
      6. 7.1.6 External Magnetic Field Errors
    2. 7.2 Transient Response Parameters
      1. 7.2.1 CMTI, Common-Mode Transient Immunity
    3. 7.3 Safe Operating Area
      1. 7.3.1 Continuous DC or Sinusoidal AC Current
      2. 7.3.2 Repetitive Pulsed Current SOA
      3. 7.3.3 Single Event Current Capability
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Current Input
      2. 8.3.2 Ambient Field Rejection
      3. 8.3.3 High-Precision Signal Chain
        1. 8.3.3.1 Temperature Stability
        2. 8.3.3.2 Lifetime and Environmental Stability
      4. 8.3.4 Internal Reference Voltage
      5. 8.3.5 Current-Sensing Measurable Ranges
      6. 8.3.6 Overcurrent Detection
        1. 8.3.6.1 Setting The User Configurable Overcurrent Threshold
          1. 8.3.6.1.1 Setting Overcurrent Threshold Using Power Supply Voltage
          2. 8.3.6.1.2 Setting Overcurrent Threshold Using Internal Reference Voltage
          3. 8.3.6.1.3 Setting Overcurrent Threshold Example
        2. 8.3.6.2 Overcurrent Output Response
        3. 8.3.6.3 Overcurrent Detection MASK Time
      7. 8.3.7 Sensor Diagnostics
        1. 8.3.7.1 Thermal Alert
        2. 8.3.7.2 Sensor Alert
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power-Down Behavior
  10. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Total Error Calculation Examples
        1. 9.1.1.1 Room-Temperature Error Calculations
        2. 9.1.1.2 Full-Temperature Range Error Calculations
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Nomenclature
    2. 10.2 Device Support
      1. 10.2.1 Development Support
    3. 10.3 Documentation Support
      1. 10.3.1 Related Documentation
    4. 10.4 ドキュメントの更新通知を受け取る方法
    5. 10.5 サポート・リソース
    6. 10.6 Trademarks
    7. 10.7 静電気放電に関する注意事項
    8. 10.8 用語集
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Electrical Characteristics

at TA = 25°C, VS = 5V on TMCS1123AxA and TMCS1123D71, VS = 3.3V on TMCS1123BxA and TMCS1123CxA (unless otherwise noted)
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
INPUT
RIN Input Conductor Resistance IN+ to IN– 0.7 mΩ
RIN Input conductor resistance temperature drift TA= –40ºC to +125ºC 2.1 μΩ/°C
IIN,MAX Maximum Continuous Input Current(1) TA= 25ºC 80 ARMS
TA= 125ºC 44
OUTPUT
S Sensitivity TMCS1123x1A 25 mV/A
TMCS1123x71 38.5
TMCS1123x2A 50
TMCS1123x3A 75
TMCS1123x4A 100
TMCS1123x5A 150
eS Sensitivity Error 0.05 V ≤ VOUT ≤ VS − 0.2 V ±0.1 ±0.4 %
Sdrift, therm Sensitivity Thermal Drift 0.05 V ≤ VOUT ≤ VS − 0.2 V, TA = −40°C to 125°C ±20 ±50 ppm/°C
Sdrift, life Sensitivity Lifetime Drift(3) 0.05 V ≤ VOUT ≤ VS − 0.2 V ±0.2 ±0.5 %
eNL Nonlinearity Error VOUT = 0.1 V to VS – 0.1 V ±0.1 %
VOUT,0A Zero Current Output Voltage TMCS1123AxA, IIN = 0A 2.5 V
TMCS1123BxA, IIN = 0A 1.65
TMCS1123Dx1, IIN = 0A 1.5
TMCS1123CxA, IIN = 0A 0.33
VOE Output Voltage Offset Error TMCS1123x1A, VOUT,0A − VREF, IIN = 0A ±0.2 ±1 mV
TMCS1123x71, VOUT,0A − VREF, IIN = 0A ±0.3 ±1.5
TMCS1123x2A, VOUT,0A − VREF, IIN = 0A ±0.3 ±1.5
TMCS1123x3A, VOUT,0A − VREF, IIN = 0A ±0.4 ±2
TMCS1123x4A, VOUT,0A − VREF, IIN = 0A ±0.5 ±2.5
TMCS1123x5A, VOUT,0A − VREF, IIN = 0A ±0.6 ±3
VOE, drift, therm Output Voltage Offset Thermal Drift TMCS1123x1A, VOUT,0A − VREF, IIN = 0A, TA = –40°C to 125°C ±2 ±10 µV/°C
TMCS1123x71, VOUT,0A − VREF, IIN = 0A, TA = –40°C to 125°C ±5 ±15
TMCS1123x2A, VOUT,0A − VREF, IIN = 0A, TA = –40°C to 125°C ±5 ±15
TMCS1123x3A, VOUT,0A − VREF, IIN = 0A, TA = –40°C to 125°C ±10 ±35
TMCS1123x4A, VOUT,0A − VREF, IIN = 0A, TA = –40°C to 125°C ±10 ±35
TMCS1123x5A, VOUT,0A − VREF, IIN = 0A, TA = –40°C to 125°C ±12 ±40
IOS, drift, life Offset Lifetime Drift(3) Input Referred, (VOUT,0A − VREF) / S, IIN = 0A ±8 ±16 mA
PSRR Power Supply Rejection Ratio Input Referred, VS = 3 V to 5.5 V, TA= –40ºC to 125ºC ±10 ±45 mA/V
CMTI Common Mode Transient Immunity VCM = 1000V, ΔVOUT < 200mV, 1µs 150 kV/µs
CMRR Common Mode Rejection Ratio Input referred, DC to 60Hz 5 µA/V
CMFR Common Mode Field Rejection Uniform External Magnetic Field, Input Referred, DC to 1kHz 10 mA/mT
Input Noise Density Input Referred, Full Bandwidth 170 μA/√Hz
CL,MAX Maximum capacitive load VOUT to GND 4.7 nF
Short circuit output current VOUT short to GND, short to VS 50 mA
SwingVS Swing to Vpower supply rail RL = 10 kΩ to GND, TA= –40ºC to 125ºC VS – 0.02 VS – 0.05 V
SwingGND Swing to GND 5 10 mV
BANDWIDTH & RESPONSE
BW Analog Bandwidth - 3dB Gain 250 kHz
SR Slew Rate(2) Output rate of change between reaching 10% and 90% of final value, 100ns input step(2) 3 V/µs
tr Response Time(2) Time between input and output reaching 90% of final values, 100ns input step, 1V output transition(2) 1 µs
tpd Propagation Delay(2) Time between input and output reaching 10% of final values, 100ns input step, 1V output transition(2) 110 ns
INTEGRATED REFERENCE
Current Overload Recovery Time 300 ns
VREF Reference Output Voltage TMCS1123AxA 2.5 V
TMCS1123BxA 1.65
TMCS1123Dx1 1.5
TMCS1123CxA 0.33
Reference Output Voltage Error TMCS1123AxA ±0.02 ±0.15 %
TMCS1123BxA
TMCS1123Dx1 ±0.05 ±0.2
TMCS1123CxA
Reference Output Voltage Thermal Drift TA = –40°C to 125°C 8 20 ppm/°C
Reference Output Voltage PSRR VS = 3V to 5.5V 80 150 µV/V
Maximum Reference Output Capacitive Load 20 nF
Reference Output Voltage Load Regulation VREF load = -5mA, 0mA, +5mA 0.2 mV/mA
OVER CURRENT DETECTION
VOC Over Current Detection Threshold Voltage VOC = S x IOC / 2.5 0.3 VS V
VOC Pin Input Impedance 120 kΩ
Over Current Hysteresis TMCS1123x1A 4.5 A
TMCS1123x71 4.5
TMCS1123x2A 3.5
TMCS1123x3A 2.2
TMCS1123x4A 1.4
TMCS1123x5A 2.7
Over Current Threshold Error TA = –40°C to 125°C ±2 ±10 %
Over Current Detection Response Time TMCS1123xxA, IIN step = 120% of IOC 100 250 ns
tMASK Over Current Detection MASK Time TMCS1123xx1, IIN step = 120% of IOC 1.25 µs
OC,OL OC Pin Pull-down Voltage IOL = 3 mA, TA = –40°C to 125°C GND 0.07 0.2 V
DIAGNOSTICS
ALERT Output Frequency 8 kHz
Output Duty Cycle, Active Low Thermal Alert 80 %
Sensor Alert 50
Thermal & Sensor Alert 20
ALERT Pin Pull-down Voltage IOL = 3 mA, TA = –40°C to 125°C GND 0.07 0.2 V
POWER SUPPLY
VS Supply voltage TA = –40ºC to +125ºC 3.0 5.5 V
IQ Quiescent current TA = 25ºC 11 14 mA
TA = –40ºC to +125ºC, VS = 5.5V 14.5 mA
Power on time Time from VS > 3 V to valid output 34 ms
Thermally limited by junction temperature. Applies when device mounted on TMCS1123xEVM. For more details, see the Safe Operating Area section.
Refer to the Transient Response section for details on transient response of the device.
Lifetime and environmental drift specifications based on three lot AEC-Q100 qualification stress test results. Typical values are population mean+1σ from worst case stress test condition. Min/max are tested device population mean±6σ; devices tested in AEC-Q100 qualification stayed within min/max limits for all stress conditions. See Lifetime and Environmental Stability section for more details.