SLDS153B May   2009  – November 2015 TMP815

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Speed Control
      2. 7.3.2 Soft-Start
      3. 7.3.3 Lock Detection
      4. 7.3.4 Current Limit
      5. 7.3.5 Minimum Speed Setting
      6. 7.3.6 Speed Output
      7. 7.3.7 Drive Frequency Selection
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resource
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VCC Supply voltage 18 V
VOUT Output voltage OUT1P, OUT1N, OUT2P, OUT2N 18 V
IOUT Continuous output current OUT1N, OUT2N –20 mA
OUT1P, OUT2P 20
VVTH
VRMI 		Input voltage VTH, RMI 7 V
VS-S Input/output voltage S-S 7 V
VFG Output voltage FG 19 V
IFG Continuous output current FG 10 mA
I5VREG Continuous output current 5VREG –20 mA
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1) ±2500 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins (2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

TA = 25°C
MIN MAX UNIT
VCC Supply voltage 6 16 V
VVTH VTH input voltage 0 5 V
VRMI RMI input voltage 0 5 V
VICM Hall input common phase input voltage 0.2 3 V
TA Operating free-air temperature –40 125 °C

6.4 Thermal Information

THERMAL METRIC (1) TMP815 UNIT
PW (TSSOP)
16 PINS
RθJA Junction-to-ambient thermal resistance 108 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 94.2 °C/W
RθJB Junction-to-board thermal resistance 31.5 °C/W
ψJT Junction-to-top characterization parameter 38.9 °C/W
ψJB Junction-to-board characterization parameter 1.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 38.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

VCC = 12 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V5VREG Output voltage 5VREG I5VREG = –5 mA TA = 25°C 4.8 4.95 5.1 V
TA = –40°C to +125°C 5.2
VLIM Current limiting voltage SENSE TA = 25°C 185 200 215 mV
TA = –40°C to +125°C 250
VCPWMH High-level output voltage CPWM 2.8 3 3.2 V
VCPWML Low-level output voltage 0.9 1.1 1.3 V
ICPWM1 Charge current VCPWM = 0.5 V 24 30 36 μA
ICPWM2 Discharge current VCPWM = 3.5 V 21 27 33 μA
fPWM Oscillation frequency CP = 220 pF 30 kHz
VCTH High-level output voltage CT 2.8 3 3.2 V
VCTL Low-level output voltage 0.9 1.1 1.3 V
ICT1 Charge current 1.6 2 2.5 μA
ICT2 Discharge current 0.16 0.2 0.25 μA
RCT Charge/discharge current ratio 8 10 12
IS-S Discharge current S-S VS-S = 1 V 0.4 0.5 0.6 μA
VONH High-level output voltage OUT_N IOH = –10 mA VCC – 1 VCC – 0.85 V
VONL Low-level output voltage IOL = 10 mA TA = 25°C 0.9 1 V
TA = –40°C to +125°C 1.05
VOPL Low-level output voltage OUT_P IOL = 10 mA 0.5 0.65 V
VHN Hall input sensitivity IN+, IN- IN+, IN– differential voltage
(including offset and hysteresis)		 ±10 ±20 mV
VFG Low-level output voltage FG IFG = 5 mA TA = 25°C 0.15 0.3 V
TA = –40°C to +125°C 0.41
IFGL Output leakage current VFG = 19 V 20 μA
IVTH
IRMI 		Bias current VTH, RMI VCPWM = VVTH = VRMI = 2 V, VCT = 0 V 0.1 μA
ICC Supply current VCC During drive 4 7.5 9.5 mA
During lock protection 4 7.5 9.5

6.6 Typical Characteristics

TMP815 C001_SLDS153.png
Figure 1. 5VREG Output Voltage (V) vs Output Current (mA)