Table 5-31 Flash Parameters at 100-MHz SYSCLKOUT
PARAMETER(2) |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
Program Time |
16-Bit Word |
|
|
50 |
|
μs |
16K Sector |
|
|
500 |
|
ms |
Erase Time(1) |
16K Sector |
|
|
10 |
|
S |
IDD3VFLP |
VDD3VFL current consumption during the Erase/Program cycle |
Erase |
|
75 |
|
mA |
Program |
|
35 |
|
mA |
IDDP |
VDD current consumption during Erase/Program cycle |
|
|
140 |
|
mA |
IDDIOP |
VDDIO current consumption during Erase/Program cycle |
|
|
20 |
|
mA |
(1) The on-chip flash memory is in an erased state when the device is shipped from TI. As such, erasing the flash memory is not required before programming, when programming the device for the first time. However, the erase operation is needed on all subsequent programming operations.
(2) Typical parameters as seen at room temperature including function call overhead, with all peripherals off. It is important to maintain a stable power supply during the entire flash programming process. It is conceivable that device current consumption during flash programming could be higher than normal operating conditions. The power supply used should ensure VMIN on the supply rails at all times, as specified in the Recommended Operating Conditions of the data sheet. Any brownout or interruption to power during erasing/programming could potentially corrupt the password locations and lock the device permanently. Powering a target board (during flash programming) through the USB port is not recommended, as the port may be unable to respond to the power demands placed during the programming process.