JAJSGY3C February   2019  – December 2023 TMUX1111 , TMUX1112 , TMUX1113

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (VDD = 5V ±10 %)
    6. 6.6 Electrical Characteristics (VDD = 3.3V ±10 %)
    7. 6.7 Electrical Characteristics (VDD = 1.8V ±10 %)
    8. 6.8 Electrical Characteristics (VDD = 1.2V ±10 %)
    9. 6.9 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 On-resistance
    2. 7.2 Off-leakage current
    3. 7.3 On-leakage current
    4. 7.4 Transition time
    5. 7.5 Break-before-make
    6. 7.6 Charge injection
    7. 7.7 Off isolation
    8. 7.8 Channel-to-Channel Crosstalk
    9. 7.9 Bandwidth
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional operation
      2. 8.3.2 Rail to rail operation
      3. 8.3.3 1.8V Logic compatible inputs
      4. 8.3.4 Fail-safe logic
      5. 8.3.5 Ultra-Low Leakage Current
      6. 8.3.6 Ultra-Low Charge Injection
    4. 8.4 Device Functional Modes
    5. 8.5 Truth Tables
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application - Sample-and-Hold Circuit
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Typical Application - Switched Gain Amplifier
      1. 9.3.1 Design Requirements
      2. 9.3.2 Detailed Design Procedure
      3. 9.3.3 Application Curve
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 ドキュメントの更新通知を受け取る方法
    3. 10.3 サポート・リソース
    4. 10.4 Trademarks
    5. 10.5 静電気放電に関する注意事項
    6. 10.6 用語集
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • PW|16
  • RSV|16
サーマルパッド・メカニカル・データ
発注情報

8.3.6 Ultra-Low Charge Injection

The TMUX111x devices have a transmission gate topology, as shown in Figure 8-3. Any mismatch in the stray capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is opened or closed.

The TMUX111x devices have special charge-injection cancellation circuitry that reduces the source-to-drain charge injection to -1.5pC at VS = 1V as shown in Figure 8-4.

GUID-0040BE35-F6FB-448D-80DC-8147652BDD3F-low.gifFigure 8-3 Transmission Gate Topology
GUID-349D7134-4FAF-4D5E-A416-38EDC37C9F6E-low.gifFigure 8-4 Charge Injection vs Source Voltage