JAJSHF1 May   2019 TMUX1219

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      アプリケーションの例
      2.      ブロック図
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (VDD = 5 V ±10 %)
    6. 6.6 Electrical Characteristics (VDD = 3.3 V ±10 %)
    7. 6.7 Electrical Characteristics (VDD = 1.8 V ±10 %)
    8. 6.8 Electrical Characteristics (VDD = 1.2 V ±10 %)
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 On-Resistance
    2. 7.2 Off-Leakage Current
    3. 7.3 On-Leakage Current
    4. 7.4 Transition Time
    5. 7.5 Break-Before-Make
    6. 7.6 Charge Injection
    7. 7.7 Off Isolation
    8. 7.8 Crosstalk
    9. 7.9 Bandwidth
  8. 8 Detailed Description
    1. 8.1 Functional Block Diagram
    2. 8.2 Feature Description
      1. 8.2.1 Bidirectional Operation
      2. 8.2.2 Rail to Rail Operation
      3. 8.2.3 1.8 V Logic Compatible Inputs
      4. 8.2.4 Fail-Safe Logic
    3. 8.3 Device Functional Modes
    4. 8.4 Truth Tables
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Switchable Operational Amplifier Gain Setting
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Input Control for Power Amplifier
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Layout Information
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントのサポート
      1. 12.1.1 関連資料
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.6 Charge Injection

The TMUX1219 has a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 12 shows the setup used to measure charge injection from Drain (D) to Source (Sx).

TMUX1219 Charge_injection(noEN).gifFigure 12. Charge-Injection Measurement Setup