JAJSG83A September   2018  – December 2018 TMUX6119

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      概略回路図
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Electrical Characteristics (Dual Supplies: ±15 V)
    6. 6.6 Switching Characteristics (Dual Supplies: ±15 V)
    7. 6.7 Electrical Characteristics (Single Supply: 12 V)
    8. 6.8 Switching Characteristics (Single Supply: 12 V)
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Truth Tables
  8. 8 Detailed Description
    1. 8.1 Overview
      1. 8.1.1  On-Resistance
      2. 8.1.2  Off-Leakage Current
      3. 8.1.3  On-Leakage Current
      4. 8.1.4  Transition Time
      5. 8.1.5  Break-Before-Make Delay
      6. 8.1.6  Enable Turn-On and Enable Turn-Off Time
      7. 8.1.7  Charge Injection
      8. 8.1.8  Off Isolation
      9. 8.1.9  Channel-to-Channel Crosstalk
      10. 8.1.10 Bandwidth
      11. 8.1.11 THD + Noise
      12. 8.1.12 AC Power Supply Rejection Ratio (AC PSRR)
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Ultra-low Leakage Current
      2. 8.3.2 Ultra-low Charge Injection
      3. 8.3.3 Bidirectional and Rail-to-Rail Operation
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントのサポート
      1. 12.1.1 関連資料
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.1.7 Charge Injection

The TMUX6119 have a simple transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QINJ. Figure 23 and Figure 24 shows the setup used to measure charge injection from source to drain and from drain to source. The charge injection is optimized for the TMUX6119 from the direction of source to drain.

TMUX6119 QINJ.gifFigure 23. Source to Drain Charge-Injection Measurement Setup
TMUX6119 QINJ2.gifFigure 24. Drain to Source Charge-Injection Measurement Setup