JAJSUQ7B June 2024 – September 2024 TMUXS7614D
PRODUCTION DATA
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The TMUXS7614D devices have a transmission-gate topology. Any mismatch in capacitance between the NMOS and PMOS transistors results in a charge injected into the drain or source during the falling or rising edge of the gate signal. The amount of charge injected into the source or drain of the device is known as charge injection, and is denoted by the symbol QC. Figure 6-6 shows the setup used to measure charge injection from source (Sx) to drain (Dx).