SLOS793B September 2012 – September 2015 TPA3112D1-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | Supply voltage | AVCC, PVCC | –0.3 | 30 | V |
VI | Interface pin voltage | SD, FAULT,GAIN0, GAIN1, AVCC (Pin 14) (2) | –0.3 | VCC + 0.3 | V |
< 10 | V/ms | ||||
PLIMIT | –0.3 | GVDD + 0.3 | V | ||
INN, INP | –0.3 | 6.3 | V | ||
RL | Minimum Load Resistance | BTL | 3.2 | ||
Continuous total power dissipation | See Thermal Information Table | ||||
TA | Operating free-air temperature range | –40 | 125 | °C | |
TJ | Operating junction temperature range(3) | –40 | 150 | °C | |
Tstg | Storage temperature range | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±4000 | V |
Charged-device model (CDM), per AEC Q100-011 | ±250 | |||
Machine model (MM) per JESD22-A115 | ±200 |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | Supply voltage | PVCC, AVCC | 8 | 26 | V |
VIH | High-level input voltage | SD, GAIN0, GAIN1 | 2 | V | |
VIL | Low-level input voltage | SD, GAIN0, GAIN1 | 0.8 | V | |
VOL | Low-level output voltage | FAULT, RPULLUP = 100 kΩ, VCC = 26 V | 0.8 | V | |
IIH | High-level input current | SD, GAIN0, GAIN1, VI = 2, VCC = 18 V | 50 | µA | |
IIL | Low-level input current | SD, GAIN0, GAIN1, VI = 0.8 V, VCC = 18 V | 5 | µA | |
TA | Operating free-air temperature | –40 | 125 | °C |
THERMAL METRIC(1)(2) | TPA3112D1-Q1 | UNIT | |
---|---|---|---|
PWP (HTSSOP) | |||
28 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 30.3 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 33.5 | °C/W |
RθJB | Junction-to-board thermal resistance | 17.5 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 7.2 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 0.9 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
| VOS | | Class-D output offset voltage (measured differentially) | VI = 0 V, Gain = 36 dB | 1.5 | 15 | mV | ||
ICC | Quiescent supply current | SD = 2 V, no load, PVCC = 12 V | 20 | mA | |||
ICC(SD) | Quiescent supply current in shutdown mode | SD = 0.8 V, no load, PVCC = 12 V | 200 | µA | |||
rDS(on) | Drain-source on-state resistance | IO = 500 mA, TJ = 25°C |
High side | 240 | mΩ | ||
Low side | 240 | ||||||
G | Gain | GAIN1 = 0.8 V | GAIN0 = 0.8 V | 19 | 20 | 21 | dB |
GAIN0 = 2 V | 25 | 26 | 27 | ||||
GAIN1 = 2 V | GAIN0 = 0.8 V | 31 | 32 | 33 | dB | ||
GAIN0 = 2 V | 35 | 36 | 37 | ||||
tON | Turn-on time | SD = 2 V | 10 | ms | |||
tOFF | Turn-off time | SD = 0.8 V | 2 | μs | |||
GVDD | Gate Drive Supply | IGVDD = 2 mA | 6.5 | 6.9 | 7.3 | V | |
PLIMIT | Output Voltage maximum under PLIMIT control | VPLIMIT = 2.0 V; VI = 6-V differential | 6.75 | 7.90 | 8.75 | V |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
KSVR | Power Supply ripple rejection | 200 mVPP ripple from 20 Hz–1 kHz, Gain = 20 dB, inputs AC-coupled to AGND |
–70 | dB | ||
PO | Continuous output power | THD+N ≤ 0.1%, f = 1 kHz, VCC = 24 V | 25 | W | ||
THD+N | Total harmonic distortion + noise | VCC = 24 V, f = 1 kHz, PO = 12 W (half-power) | <0.05 % | |||
Vn | Output integrated noise | 20 Hz to 22 kHz, A-weighted filter, Gain = 20 dB | 65 | µV | ||
–80 | dBV | |||||
Crosstalk | VO = 1 Vrms, Gain = 20 dB, f = 1 kHz | –70 | dB | |||
SNR | Signal-to-noise ratio | Maximum output at THD+N < 1%, f = 1 kHz, Gain = 20 dB, A-weighted |
102 | dB | ||
fOSC | Oscillator frequency | 250 | 310 | 350 | kHz | |
Thermal trip point | 150 | °C | ||||
Thermal hysteresis | 15 | °C |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
KSVR | Supply ripple rejection | 200 mVPP ripple from 20 Hz–1 kHz, Gain = 20 dB, inputs AC-coupled to AGND |
–70 | dB | ||
PO | Continuous output power | THD+N ≤ 10%, f = 1 kHz , RL = 8 Ω | 10 | W | ||
PO | Continuous output power | THD+N ≤ 10%, f = 1 kHz , RL = 4 Ω | 20 | W | ||
THD+N | Total harmonic distortion + noise | RL = 8 Ω, f = 1 kHz, PO = 5 W (half-power) | <0.06 % | |||
Vn | Output integrated noise | 20 Hz to 22 kHz, A-weighted filter, Gain = 20 dB | 65 | µV | ||
–80 | dBV | |||||
Crosstalk | Po = 1 W, Gain = 20 dB, f = 1 kHz | –70 | dB | |||
SNR | Signal-to-noise ratio | Maximum output at THD+N < 1%, f = 1 kHz, Gain = 20 dB, A-weighted |
102 | dB | ||
fOSC | Oscillator frequency | 250 | 310 | 350 | kHz | |
Thermal trip point | 150 | °C | ||||
Thermal hysteresis | 15 | °C |