SLOS313C December 2000 – March 2016 TPA6111A2
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
MIN | MAX | UNIT | ||
---|---|---|---|---|
VDD | Supply voltage | 6 | V | |
VI | Input voltage | –0.3 | VDD + 0.3 | V |
Continuous total power dissipation | Internally Limited | |||
TJ | Operating junction temperature | –40 | 150 | °C |
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds | 260 | °C | ||
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VDD | Supply voltage | 2.5 | 5.5 | V |
TA | Operating free-air temperature | –40 | 85 | °C |
VIH | High-level input voltage (SHUTDOWN) | 60% × VDD | V | |
VIL | Low-level input voltage (SHUTDOWN) | 25% × VDD | V |
THERMAL METRIC(1) | TPA6111A2 | UNIT | ||
---|---|---|---|---|
D (SOIC) | DGN (MSOP) | |||
8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 114.7 | 55.9 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 59.0 | 47.3 | °C/W |
RθJB | Junction-to-board thermal resistance | 54.9 | 36.4 | °C/W |
ψJT | Junction-to-top characterization parameter | 14.2 | 2.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 54.4 | 36.2 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | 9.2 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VOO | Output offset voltage | 10 | mV | |||
PSRR | Power supply rejection ratio | VDD = 3.2 V to 3.4 V | 70 | dB | ||
IDD | Supply current | SHUTDOWN (pin 5) = 0 V | 1.5 | 3 | mA | |
IDD(SD) | Supply current in shutdown mode | SHUTDOWN (pin 5) = VDD | 1 | 10 | µA | |
Zi | Input impedance | > 1 | MΩ |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PO | Output power (each channel) | THD ≤ 0.1%, f = 1 kHz | 60 | mW | ||
THD+N | Total harmonic distortion + noise | PO = 40 mW, 20 Hz – 20 kHz | 0.4% | |||
BOM | Maximum output power BW | G = 20 dB, THD < 5% | > 20 | kHz | ||
Phase margin | Open-loop | 96° | ||||
Supply ripple rejection | f = 1 kHz, C(BYP) = 0.47 µF | 71 | dB | |||
Channel/channel output separation | f = 1 kHz, PO = 40 mW | 89 | dB | |||
SNR | Signal-to-noise ratio | PO = 50 mW, AV = 1 | 100 | dB | ||
Vn | Noise output voltage | AV = 1 | 11 | µV(rms) |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VOO | Output offset voltage | 10 | mV | |||
PSRR | Power supply rejection ratio | VDD = 4.9 V to 5.1 V | 70 | dB | ||
IDD | Supply current | SHUTDOWN (pin 5) = 0 V | 1.6 | 3.2 | mA | |
IDD(SD) | Supply current in shutdown mode | SHUTDOWN (pin 5) = VDD | 1 | 10 | µA | |
|IIH| | High-level input current (SHUTDOWN) | VDD = 5.5 V, VI = VDD | 1 | µA | ||
|IIL| | Low-level input current (SHUTDOWN) | VDD = 5.5 V, VI = 0 V | 1 | µA | ||
Zi | Input impedance | > 1 | MΩ |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PO | Output power (each channel) | THD ≤ 0.1%, f = 1 kHz | 150 | mW | ||
THD+N | Total harmonic distortion + noise | PO = 100 mW, 20 Hz – 20 kHz | 0.6% | |||
BOM | Maximum output power BW | G = 20 dB, THD < 5% | > 20 | kHz | ||
Phase margin | Open-loop | 96° | ||||
Supply ripple rejection ratio | f = 1 kHz, C(BYP) = 0.47 µF | 61 | dB | |||
Channel/channel output separation | f = 1 kHz, PO = 100 mW | 90 | dB | |||
SNR | Signal-to-noise ratio | PO = 100 mW, AV = 1 | 100 | dB | ||
Vn | Noise output voltage | AV = 1 | 11.7 | µV(rms) |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PO | Output power (each channel) | THD ≤ 0.1%, f = 1 kHz | 35 | mW | ||
THD+N | Total harmonic distortion + noise | PO = 40 mW, 20 Hz – 20 kHz | 0.4% | |||
BOM | Maximum output power BW | G = 20 dB, THD < 2% | > 20 | kHz | ||
Phase margin | Open-loop | 96° | ||||
Supply ripple rejection | f = 1 kHz, C(BYP) = 0.47 µF | 71 | dB | |||
Channel/channel output separation | f = 1 kHz, PO = 25 mW | 75 | dB | |||
SNR | Signal-to-noise ratio | PO = 90 mW, AV = 1 | 100 | dB | ||
Vn | Noise output voltage | AV = 1 | 11 | µV(rms) |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PO | Output power (each channel) | THD ≤ 0.1%, f = 1 kHz | 90 | mW | ||
THD+N | Total harmonic distortion + noise | PO = 20 mW, 20 Hz – 20 kHz | 2% | |||
BOM | Maximum output power BW | G = 20 dB, THD < 2% | > 20 | kHz | ||
Phase margin | Open-loop | 97° | ||||
Supply ripple rejection | f = 1 kHz, C(BYP) = 0.47 µF | 61 | dB | |||
Channel/channel output separation | f = 1 kHz, PO = 65 mW | 98 | dB | |||
SNR | Signal-to-noise ratio | PO = 90 mW, AV = 1 | 104 | dB | ||
Vn | Noise output voltage | AV = 1 | 11.7 | µV(rms) |
FIGURE | |||
---|---|---|---|
THD+N | Total harmonic distortion + noise | vs Frequency | Figure 1, Figure 3, Figure 5, Figure 6, Figure 7, Figure 9, Figure 11, Figure 13 |
vs Output power | Figure 2, Figure 4, Figure 8, Figure 10, Figure 12, Figure 14 | ||
Supply ripple rejection ratio | vs Frequency | Figure 15, Figure 16 | |
Vn | Output noise voltage | vs Frequency | Figure 17, Figure 18 |
Crosstalk | vs Frequency | Figure 19-Figure 24 | |
Shutdown attenuation | vs Frequency | Figure 25, Figure 26 | |
Open-loop gain and phase margin | vs Frequency | Figure 27, Figure 28 | |
Output power | vs Load resistance | Figure 29, Figure 30 | |
IDD | Supply current | vs Supply voltage | Figure 31 |
SNR | Signal-to-noise ratio | vs Voltage gain | Figure 32 |
Power dissipation and amplifier | vs Load power | Figure 33, Figure 34 |