JAJSCB7A May   2016  – July 2016 TPD1E1B04

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 ESD Ratings—IEC Specification
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 IEC 61000-4-2 ESD Protection
      2. 7.3.2 IEC 61000-4-4 EFT Protection
      3. 7.3.3 IEC 61000-4-5 Surge Protection
      4. 7.3.4 IO Capacitance
      5. 7.3.5 DC Breakdown Voltage
      6. 7.3.6 Low Leakage Current
      7. 7.3.7 Extremely Low ESD Clamping Voltage
      8. 7.3.8 Industrial Temperature Range
      9. 7.3.9 Industry Standard Footprint
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range
        2. 8.2.2.2 Operating Frequency
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 ドキュメントのサポート
      1. 11.1.1 関連資料
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 コミュニティ・リソース
    4. 11.4 商標
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.

8.1 Application Information

The TPD1E1B04 is a diode type TVS which is used to provide a path to ground for dissipating ESD events on high-speed signal lines between a human interface connector and a system. As the current from ESD passes through the TVS, only a small voltage drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered TVS holds this voltage, VCLAMP, to a safe level for the protected IC.

8.2 Typical Application

TPD1E1B04 SLVSDL0_app_diagram.gif Figure 11. USB 2.0 ESD Schematic

8.2.1 Design Requirements

For this design example, two TPD1E1B04 devices are being used in a USB 2.0 application. This provides a complete ESD protection scheme.

Given the USB 2.0 application, the parameters listed in Table 1 are known.

Table 1. Design Parameters

DESIGN PARAMETER VALUE
Signal range on DP-DM lines 0 V to 3.6 V
Operating frequency on DP-DM lines up to 240 MHz

8.2.2 Detailed Design Procedure

8.2.2.1 Signal Range

The TPD1E1B04 supports signal ranges between –3.6 V and 3.6 V, which supports the USB 2.0 signal pair on the USB 2.0 application.

8.2.2.2 Operating Frequency

The TPD1E1B04 has a 1-pF (typical) capacitance, which supports the USB 2.0 data rates of 480 Mbps.

8.2.3 Application Curve

TPD1E1B04 D010_SLVSDL0.gif Figure 12. Insertion Loss