SLVSCO7C August 2014 – September 2017 TPD1E05U06-Q1 , TPD4E05U06-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Electrical fast transient | IEC 61000-4-4 (5/50 ns) | 80 | A | |
Peak pulse | IEC 61000-4-5 Current (tp – 8/20 µs) | 2.5 | A | |
IEC 61000-4-5 Power (tp – 8/20 µs) - TPD4E05U06-Q1(3) | 40 | W | ||
IEC 61000-4-5 Power (tp – 8/20 µs) - TPD1E05U06-Q1(3) | 30 | W | ||
TA | Operating temperature | –40 | 125 | °C |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge(1) | Human-body model (HBM), per AEC Q100-002(2) | ±8000 | V |
Charged-device model (CDM), per AEC Q100-011 | ±1000 |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic Discharge | IEC 61000-4-2 contact discharge - TPD4E05U06-Q1 (1) | ±12000 | V |
IEC 61000-4-2 contact discharge - TPD1E05U06-Q1 | ±12000 | |||
IEC 61000-4-2 air-gap discharge | ±15000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VIO | Input pin voltage | 0 | 5.5 | V |
TA | Operating free-air temperature | –40 | 125 | °C |
THERMAL METRIC(1) | TPD1E05U06-Q1 | TPD4E05U06-Q1 | UNIT | |
---|---|---|---|---|
DPY (X1SON) | DQA (USON) | |||
2 PINS | 10 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 697.3 | 327 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 471 | 189.5 | °C/W |
RθJB | Junction-to-board thermal resistance | 575.9 | 257.7 | °C/W |
ψJT | Junction-to-top characterization parameter | 175.7 | 60.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 575.1 | 257 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
INPUT – OUTPUT RESISTANCE | ||||||||
VRWM | Reverse stand-off voltage | IIO < 10 µA | 5.5 | V | ||||
VBR | Break-down voltage | IIO = 1 mA | 6.4 | 8.7 | V | |||
VCLAMP | Clamp voltage | IPP = 1 A, TLP, from I/O to GND(1) | 10 | V | ||||
IPP = 5 A, TLP, from I/O to GND(1) | 14 | |||||||
IPP = 1 A, TLP, from GND to I/O(1) | 3 | |||||||
IPP = 5 A, TLP, from GND to I/O(1) | 7.5 | |||||||
ILEAK | Leakage current | VIO = 2.5 V | 1 | 10 | nA | |||
RDYN | Dynamic resistance | DPY package | I/O to GND(2) | 0.8 | Ω | |||
GND to I/O(2) | 0.7 | |||||||
DQA package | I/O to GND(2) | 0.96 | ||||||
GND to I/O(2) | 0.9 | |||||||
CAPACITANCE | ||||||||
CL | Line capacitance | VIO = 2.5 V, f = 1 MHz, I/O to GND | TPD1E05U06-Q1 DPY package | 0.42 | pF | |||
TPD4E05U06-Q1 DQA package | 0.5 | |||||||
Δ CIO-TO-GND | Variation of input capacitance | GND Pin = 0 V, f = 1 MHz, VBIAS = 2.5 V, Channel x pin to GND – channel y pin to GND |
0.05 | 0.08 | pF | |||
CCROSS | Channel to channel input capacitance | GND Pin = 0 V, f = 1 MHz, VBIAS = 2.5 V, between channel pins | 0.04 | 0.08 | pF |