SLVS817G May   2008  – June 2015 TPD4S009 , TPD4S010

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 ±8-kV IEC61000-4-2 Level 4 Contact ESD Protection
      2. 7.3.2 IEC61000-4-5 Surge Protection
      3. 7.3.3 I/O Capacitance
      4. 7.3.4 Low Leakage Current
      5. 7.3.5 Supports High-Speed Differential Data Rates
      6. 7.3.6 Ultra-low Matching Capacitance Between Differential Signal Pairs
      7. 7.3.7 Ioff Feature for the TPD4S009
      8. 7.3.8 Industrial Temperature Range
      9. 7.3.9 Easy Flow-Through Routing
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range on Pin 1, 2, 4, or 5
        2. 8.2.2.2 Bandwidth on Pin 1, 2, 4, or 5
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

11 Device and Documentation Support

11.1 Documentation Support

11.1.1 Related Documentation

For related information see, SLVSBO7

11.2 Trademarks

All trademarks are the property of their respective owners.

11.3 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.4 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.